IGBT SPseries
Six
SixSix
Six-
--
-Pack 50A 1200V
Pack 50A 1200VPack 50A 1200V
Pack 50A 1200V
PTMB50B12C
PTMB50B12CPTMB50B12C
PTMB50B12C
CIRCUIT OUTLINE DRAWING
MAXMUM RATINGS (Tc=25°C)
Item Symbol PTMB50B12C Unit
Collector-Emitter Voltage VCES 1200 V
Gate - Emitter Voltage VGES +/ - 20 V
DC IC 50
Collector Current 1 ms ICP 100
A
Collector Power Dissipation PC 250 W
Junction Temperature Range Tj -40 to +150 °C
Storage Temperature Range Tstg -40 to +125 °C
Isolation Voltage Terminal to Base AC, 1 min.) VISO 2500 V
Module Base to Heatsink 2
Mounting Torque Bus Bar to Mai n Terminals FTOR - N•m
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Emitter Cut-Off Current ICES V
CE=1200V,VGE=0V - - 1.0
mA
Gate-Emitter Leakage Current IGES V
GE=+/- 20V,VCE=0V - - 1.0
µA
Collector-Emitter Saturation Voltage VCE(sat) I
C=50A,VGE=15V - 1.9 2.4
V
Gate-Emitter Threshold Voltage VGE(th) V
CE=5V,IC=50mA 4.0 - 8.0
V
Input Capacitance Cies VCE=10V,VGE=0V,f=1MHz - 4200 -
pF
Rise Time tr - 0.25 0.45
Turn-on Time ton - 0.40 0.70
Fall Time tf - 0.25 0.35
Switching Time
Turn-off Time toff
VCC= 600V
RL= 12 ohm
RG= 20 ohm
VGE= +/- 15V - 0.80 1.10
µs
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item Symbol Rated Value Unit
DC IF 50
Forward Current 1 ms IFM 100
A
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Peak Forward Voltage VF I
F=50A,VGE=0V - 1.9 2.4
V
Reverse Recovery Time trr IF=50A,VGE=-10V,di/dt=100A/µs - 0.2 0.3
µs
THERMAL CHARACTERISTICS
Characteristic Symbol Test Condition Min. Typ. Max. Unit
IGBT - - 0.5
Thermal Impedance DIODE Rth(j-c) Junction to Case - - 0.1
°C/W
Dimension(mm)
A
pproximate Weight : 190
g
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PTMB50B12C
0246810
0
25
50
75
100
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Fig.1- Output Characteristics
(Typical)
TC=25℃
10V
9V
12V
15V
VGE =20V
8V
7V
0 4 8 12 16 20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Voltage V
CE
(V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
TC=25℃
50A
IC=25A 100A
0 4 8 12 16 20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Voltage V
CE
(V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage
(Typical)
IC=25A
50A
100A
TC=125℃
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350
0
100
200
300
400
500
600
700
800
Total Gate Charge Qg
(nC)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage
(Typical)
VCE=600V
400V
200V
RL=12Ω
TC=25℃
0.1 0.2 0.5 1 2 5 10 20 50 100 200
20
50
100
200
500
1000
2000
5000
10000
20000
Collector to Emitter Voltage VCE
(V)
Capacitance C
(pF)
Fig.5- Capacitance vs. Collector to Emitter Voltage
(Typical)
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25℃
0 1020304050
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Collector Current IC
(A)
Switching Time t
(μs)
Fig.6- Collector Current vs. Switching Time
(Typical)
tOFF
tf
tr
tON
VCC=600V
RG=20Ω
VGE=±15V
TC=25℃
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PTMB50B12C
5 10 20 50 100 200 300
0.05
0.1
0.2
0.5
1
2
5
10
Series Gate Impedance RG
(Ω)
Switching Time t
(μs)
Fig.7- Series Gate Impedance vs. Switching Time
(Typical)
VCC=600V
IC=50A
VGE=±15V
TC=25℃
tf
tr
ton
toff
01234
0
10
20
30
40
50
60
70
80
90
100
Forward Voltage VF
(V)
Forward Current I
F
(A)
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
TC=25℃TC=125℃
0 400 800 1200 1600
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Fig.10- Reverse Bias Safe Operating Area
(Typical)
RG=20Ω
VGE=±15V
TC≦125℃
0 50 100 150 200 250 300
1
2
5
10
20
50
100
200
500
-di/dt
(A/μs)
Peak Reverse Recovery Current I
RrM
(A)
Reverse Recovery Time trr
(ns)
Fig.9- Reverse Recovery Characteristics
(Typical)
IRrM
trr
IF=50A
TC=25℃
10
-5
10
-4
10
-3
10
-2
10
-1
110
2x10
-3
5x10
-3
10
-2
2x10
-2
5x10
-2
10
-1
2x10
-1
5x10
-1
1
2
5
Time t
（s）
Tansient Thermal Impedance Rth
(J-C)
(ﾟC/W)
fig11-Tansient Thermal Impedance
Tc=25℃
1 Shot
IGBT
FRD
1
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