EAMOSPEC HIGH-POWER PNP SILICON POWER TRANSISTORS ... designed for use in general-purpose amplifier and switching application . FEATURES: * Recommend for 45 - 50W Audio Frequency Amplifier Output stage. * Complementary to 2SD718 MAXIMUM RATINGS PNP 2SB688 8 AMPERE POWER TRANASISTOR 120 VOLTS 80 WATTS TO-247(3P) qh tr A rile f | 123 Fel AT dh eh K 1 Characteristic Symbol 2SB688 Unit Collector-Emitter Voltage Veeo 120 Vv Collector-Base Voltage Vopo 120 Vv Emitter-Base Voltage Vepo 5.0 Vv Collector Current - Continuous le 8.0 - Peak low 16 Base current lp 0.8 A Total Power Dissipation @T, = 25C Pp 80 Ww Derate above 25C 0.64 wc Operating and Storage Junction Ty Tst C Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal! Resistance Junction to Case R&jc 1.56 C FIGURE -1 POWER DERATING 100 e az 80 = 5 N = 6 = a 40 PS i 3 20 0 0 25 50 75 100 125 150 To , TEMPERATURE(C) PIN 1.BASE 2.COLLECTOR 3.EMITTER DIM MILLIMETERS MIN MAX A 20.63 | 2238 B 15.38 | 16.20 c 1.90 2.70 D 5.10 6.10 E 1481 | 15.22 F 11.72 | 12.84 G 4.20 450 H 1.82 2.46 I 2.92 3.23 J 0.89 153 K 5.26 5.66 L 18.50 | 21.50 M 4.68 5.36 N 2.40 2.80 0 3.25 3.65 P 0.55 0.702SB688 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VieR)ceo V (I,= 50 mA, I,=0 ) 120 Collector Cutoff Current logo uA ( Vep= 120 V, I= 0) 10 Emitter Cutoff Current leso uA ( Vep= 5.0 V, I= 0) 10 ON CHARACTERISTICS (1) DC Current Gain (I= 1.0 A, Veg= 5.0 V ) * hFE(2) 55 160 Collector-Emitter Saturation Voltage Veejsat) V (l,p= 5.0 A, I,= 0.5 A) 2.5 Base-Emitter On Voltage VeE\0 n) Vv (Ip= 5.0 A, Vop=5.0 V) 1.5 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f, MHz (1g = 1.0 A, Veg = 5.0 V, f = 1.0 MHz) 10(typ) Output capacitance Cop pF (Veg = 10 V , Ie = 0, f = 1.0 MHz ) 280(typ) (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0% * hFE(2) Classification : [ 55 R 110 | 80 O 160 |2SB688 PNP Ie , COLLECTOR CURRENT (A) le, COLLECTOR CURRENT (A) lc , COLLECTOR CURRENT (Amp) Ic - Vee 50 Ip=20 mA Ig=0 * o 1 2 3 4 5 6 7 8 9 0 11 12 13 14 Vce , COLLECTOR-EMITTER VOLTAGE (V) Ic - Vbe Tc=100C 25C 0 02 0.4 0.6 0.8 1 12 1.4 16 1.8 2 Vee, BASE - EMITTER VOLTAGE (V) ACTIVE-REGION SAFE OPERATING AREA (SOA) 30 20 1ms 10 ms 10 400ms 500ms - Bondng Wire Limit Second Breakdown Thermally Limited at T,=25C (Single Puse 0.41 50 70 100 300 5.0 7.0 10 20 Vee, COLLECTOR EMITTER VOLTAGE (VOLTS) 10 20 hre , OC CURRENT GAIN V VOLTAGE (VOLTS) DC CURRENT GAIN Voes5.0V a oO 0.05 0.1 02 05 1.0 2.0 5.0 Ic , COLLECTOR CURRENT (AMP) Veeeatyle COMMON EMITTER 20 tg /lg210 | 1 La 0.01 0.01 0.02 0.05 0.1 0.2 05 1.0 2.0 5.0 40 IC , COLLECTOR CURRENT (mA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typ9=150 C; Te is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided Tupn<150C, At high case temperatures, thermal limita- tion will reduce the power that can be handled to vaiues less than the limitations imposed by second breakdown. lo-Vee