LESHAN RADIO COMPANY, LTD.
M20–1/4
1
3
2
MMBT5550LT1
MMBT5551LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 140 Vdc
Collector–Base V oltage V CBO 160 Vdc
Emitter–Base V oltage V EBO 6.0 Vdc
Collector Current — Continuous I C600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBT5550LT1 = M1F, MMBT5551LT1 = G1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage(3) V (BR)CEO Vdc
(I C = 1.0 mAdc, I B = 0) MMBT5550 140 —
MMBT5551 160 —
Collector–Base Breakdown V oltage V (BR)CBO Vdc
(I C = 100 µAdc, I E = 0) MMBT5550 160 —
MMBT5551 180 —
Emitter–Base Breakdown V oltage V (BR)EBO Vdc
(I E = 10 µAdc, I C = 0) 6.0 —
Collector Cutoff Current I CBO
( V CB = 100Vdc, I E = 0) MMBT5550 — 100 nAdc
( V CB = 120Vdc, I E = 0) MMBT5551 — 50
( V CB = 100Vdc, I E = 0, T A=100 °C) MMBT5550 — 100 µAdc
( V CB = 120Vdc, I E = 0, T A=100 °C) MMBT5551 — 50
Emitter Cutoff Current I EBO — 50 nAdc
( V BE = 4.0Vdc, I C= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
LESHAN RADIO COMPANY, LTD.
M20–2/4
MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Ma x Unit
ON CHARACTERISTICS
DC Current Gain hFE ––
(I C = 1.0 mAdc, V CE = 5.0 Vdc) MMBT5550 60 —
MMBT5551 80 —
(I C = 10 mAdc, V CE = 5.0 Vdc) MMBT5550 60 250
MMBT5551 80 250
(I C = 50 mAdc, V CE = 5.0Vdc) MMBT5550 20 —
MMBT5551 30 —
Collector–Emitter Saturation V oltage VCE(sat) Vdc
(I C = 10 mAdc, I B = 1.0 mAdc) Both Types — 0.15
(I C = 50 mAdc, I B = 5.0 mAdc
) MMBT5550 — 0.25
MMBT5551 — 0.20
Base–Emitter Saturation Voltage V BE(sat) Vdc
(I C = 10 mAdc, I B = 1.0 mAdc) Both T ypes — 1.0
(I C = 50 mAdc, I B = 5.0 mAdc) MMBT5550 — 1.2
MMBT5551 — 1.0
LESHAN RADIO COMPANY, LTD.
M20–3/4
MMBT5550LT1 MMBT5551LT1
V
CE
= 1.0 V
V
CE
= 5.0 V
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
h FE, DC CURRENT GAIN (NORMALIZED)
T
J
= +125°C
+25°C
–55°C
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
500
300
200
100
50
30
20
10
7.0
5.0
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
V BE , BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Collector Cut–Off Region I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (µA)
V, VOLTAGE (VOLTS)
–0.4 –0.3 –0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
10 1
10 0
10 –1
10 –2
10 –3
10 –4
10 –5
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
1.0
0.8
0.6
0.4
0.2
0
I
C
= 1.0 mA
T
J
= 25°C
10 mA 30 mA 100 mA
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
1.0
0.8
0.6
0.4
0.2
0
V
CE
= 30 V
T
J
= 125°C
75°C
25°C
I
C
= I
CES
REVERSE FORWARD
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
LESHAN RADIO COMPANY, LTD.
M20–4/4
MMBT5550LT1 MMBT5551LT1
C
obo
C, CAPACITANCE (pF)
10.2 V
V in
10 ms
INPUT PULSE
V BB
R B
5.1 k
0.25 mF
V in 1N914
V out
R C
V CC 30 V
3.0 k
t r , t f
<
10 ns
DUTY CYCLE = 1.0%
t, TIME (ns)
Values Shown are for I C @ 10 mA
Figure 6. Switching Time Test Circuit
I C , COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
V R , REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances Figure I C , COLLECTOR CURRENT (mA)
8. Turn–On Time
I C , COLLECTOR CURRENT (mA)
Figure 9. Turn–Off Time
t, TIME (ns)
θ V , TEMPERATURE COEFFICIENT (mV/°C)
T
J
= 25°C I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
t
d
@ V
EB(off)
= 1.0 V
V
CC
= 120 V
I
C
/I
B
= 10
T
J
= 25°C
t
f
@ V
CC
= 120 V
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
θ
VC
for V
CE(sat)
θ
VB
for V
BE(sat)
T
J
= –55°C to +135°C
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
2.5
2
1.5
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
C
ibo
0.2 0.3 0.7 0.51.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
1000
500
300
200
100
50
30
20
10
0.2 0.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100 200
5000
3000
2000
1000
500
300
200
100
50
100
–8.8 V
100
