LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 140 Vdc Collector-Base Voltage V CBO 160 Vdc Emitter-Base Voltage V 6.0 Vdc 600 mAdc Collector Current -- Continuous EBO IC 3 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C RJA TJ , Tstg DEVICE MARKING MMBT5550LT1 = M1F, MMBT5551LT1 = G1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max 140 -- 160 -- 160 -- 180 -- 6.0 -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (I C = 1.0 mAdc, I B = 0) V (BR)CEO MMBT5550 MMBT5551 Collector-Base Breakdown Voltage (I C = 100 Adc, I E = 0) Vdc V (BR)CBO MMBT5550 MMBT5551 Emitter-Base Breakdown Voltage V Vdc Vdc (BR)EBO (I E = 10 Adc, I C = 0) Collector Cutoff Current ( V CB = 100Vdc, I E = 0) MMBT5550 I CBO -- 100 ( V CB = 120Vdc, I E = 0) MMBT5551 -- 50 ( V CB = 100Vdc, I E = 0, T A=100 C) MMBT5550 -- 100 ( V CB = 120Vdc, I E = 0, T A=100 C) MMBT5551 -- 50 -- 50 Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. I EBO nAdc Adc nAdc M20-1/4 LESHAN RADIO COMPANY, LTD. MMBT5550LT1 MMBT5551LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max 60 80 60 80 20 30 -- -- 250 250 -- -- Both Types -- 0.15 MMBT5550 MMBT5551 -- -- 0.25 0.20 Both Types -- 1.0 MMBT5550 MMBT5551 -- -- 1.2 1.0 Unit ON CHARACTERISTICS DC Current Gain (I C = 1.0 mAdc, V CE = 5.0 Vdc) (I C = 10 mAdc, V CE = 5.0 Vdc) (I C = 50 mAdc, V CE = 5.0Vdc) Collector-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc ) Base-Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50 mAdc, I B = 5.0 mAdc) hFE MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 -- VCE(sat) V Vdc Vdc BE(sat) M20-2/4 LESHAN RADIO COMPANY, LTD. h FE, DC CURRENT GAIN (NORMALIZED) MMBT5550LT1 MMBT5551LT1 500 300 V CE = 1.0 V T J = +125C 200 V CE = 5.0 V +25C 100 -55C 50 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain 1.0 T J = 25C 0.8 I C = 1.0 mA 10 mA 0.6 30 mA 100 mA 0.4 0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 10 1 1.0 T J = 25C V CE = 30 V 0.8 10 -1 T J = 125C I C = I CES 10 -2 10 -3 V, VOLTAGE (VOLTS) I C, COLLECTOR CURRENT (A) 10 0 75C REVERSE FORWARD 25C 10 -4 V BE(sat) @ I C /I B = 10 0.6 0.4 0.2 V CE(sat) @ I C /I B = 10 10 -5 0 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 V BE , BASE-EMITTER VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Cut-Off Region Figure 4. "On" Voltages 100 M20-3/4 LESHAN RADIO COMPANY, LTD. MMBT5551LT1 2.5 T J = -55C to +135C 2 1.5 1.0 10.2 V V BB VC for V CE(sat) 0.5 V in 100 0 -0.5 0.25 mF 10 ms -1.0 V CC -8.8 V 3.0 k 30 V RC RB INPUT PULSE VB for V BE(sat) V out 5.1 k -1.5 100 V in t r , t f <10 ns -2.0 1N914 DUTY CYCLE = 1.0% -2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 V , TEMPERATURE COEFFICIENT (mV/C) MMBT5550LT1 Values Shown are for I C @ 10 mA I C , COLLECTOR CURRENT (mA) Figure 6. Switching Time Test Circuit Figure 5. Temperature Coefficients 100 1000 70 50 I C /I B = 10 T J = 25C T J = 25C 20 200 10 7.0 t, TIME (ns) 300 C ibo 5.0 C obo 3.0 2.0 t r @ V CC = 120 V t r @ V CC = 30 V 100 50 t d @ V EB(off) = 1.0 V 30 V CC = 120 V 20 10 1.0 0.2 0.3 0.7 0.5 1.0 2.0 3.0 5.0 7.0 10 0.2 0.3 0.5 20 1.0 2.0 3.0 5.0 10 20 30 50 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Turn-On Time 100 200 5000 I C /I B = 10 T J = 25C t f @ V CC = 120 V 3000 2000 t f @ V CC = 30 V 1000 t, TIME (ns) C, CAPACITANCE (pF) 500 30 500 300 t s @ V CC = 120 V 200 100 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 9. Turn-Off Time M20-4/4