SPA20N65C3 - Infineon Technologies

2007-08-30

Rev. 3.0 Page 1

SPP20N65C3, SPA20N65C3

SPI20N65C3

Cool MOS™ Power Transistor VDS 650 V

RDS(on) 0.19 Ω

ID20.7 A

Feature

• New revolutionary high voltage technology

• Worldwide best RDS(on) in TO 220

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dtrated

• High peak current capability

• Improved transconductance

PG-TO262 PG-TO220FP PG-TO220

P-TO220-3-31

123

Marking

20N65C3

Type Package Ordering Code

SPP20N65C3 PG-TO220 Q67040-S4556

SPA20N65C3 PG-TO220FP SP000216362

SPI20N65C3 PG-TO262 Q67040-S4560

Maximum Ratings

Parameter Symbol Value Unit

SPA

Continuous drain current

T

C

= 25 °C

T

C

= 100 °C

I

D

20.7

13.1

20.7

1)

13.1

1)

A

Pulsed drain current, t

p

limited by T

j

max

I

D

p

uls

62.1 62.1 A

Avalanche energy, single pulse

I

D

=3.5A, V

DD

=50V

E

AS

690 690 mJ

Avalanche energy, repetitive t

AR

limited by T

jmax2)

I

D

=7A, V

DD

=50V

E

AR

11

Avalanche current, repetitive t

A

R

limited by T

j

max

I

AR

77A

Gate source voltage V

GS

±20 ±20 V

Gate source voltage AC (f >1Hz) V

GS

±30 ±30

Power dissipation,

T

C

= 25°C

P

tot

208 34.5 W

SPP_I

Operating and storage temperature T

j

,

T

st

g

-55...+150 °C

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SPP20N65C3, SPA20N65C3

SPI20N65C3

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 480 V, ID = 20.7 A, Tj = 125 °C

dv/dt50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case RthJC - - 0.6 K/W

Thermal resistance, junction - case, FullPAK RthJC

_

FP - - 3.6

Thermal resistance, junction - ambient, leaded RthJA - - 62

Thermal resistance, junction - ambient, FullPAK RthJA

_

FP - - 80

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

-

35

62

-

Soldering temperature, wavesoldering

1.6 mm (0.063 in.) from case for 10s

Tsold - - 260 °C

Electrical Characteristics, at T

j

=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 - - V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=7A - 730 -

Gate threshold voltage VGS

(

th

)

ID=1000µA, VGS=VD

S

2.1 3 3.9

Zero gate voltage drain current IDSS VDS=600V, VGS=0V,

Tj=25°C

Tj=150°C

-

0.1

-

1

100

µA

Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=13.1A

Tj=25°C

Tj=150°C

-

0.16

0.43

0.19

-

Ω

Gate input resistance RGf=1MHz, open drain - 0.54 -

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2007-08-30

Rev. 3.0 Page 3

SPP20N65C3, SPA20N65C3

SPI20N65C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=13.1A

- 17.5 - S

Input capacitance Ciss VGS=0V, VDS=25V,

f=1MHz

- 2400 - pF

Output capacitance Coss - 780 -

Reverse transfer capacitance Crss - 50 -

Effective output capacitance,4)

energy related

Co(er) VGS=0V,

VDS=0V to 480V

- 83 -

Effective output capacitance,5)

time related

Co(tr) - 160 -

Turn-on delay time td(on) VDD=380V, VGS=0/13V,

ID=20.7A,

RG=3.6Ω,Tj=125

- 10 - ns

Rise time trVDD=380V, VGS=0/13V,

ID=20.7A,

RG=3.6Ω

- 5 -

Turn-off delay time td(off) - 67 100

Fall time tf- 4.5 12

Gate Charge Characteristics

Gate to source charge Qgs VDD=480V, ID=20.7A - 11 - nC

Gate to drain charge Qgd - 33 -

Gate charge total QgVDD=480V, ID=20.7A,

VGS=0 to 10V

- 87 114

Gate plateau voltage V(plateau) VDD=480V, ID=20.7A - 5.5 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

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Rev. 3.0 Page 4

SPP20N65C3, SPA20N65C3

SPI20N65C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous

forward current

ISTC=25°C - - 20.7 A

Inverse diode direct current,

pulsed ISM - - 62.1

Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V

Reverse recovery time trr VR=480V, IF=IS ,

diF/dt=100A/µs

- 500 800 ns

Reverse recovery charge Qrr - 11 - µC

Peak reverse recovery current Irrm - 70 - A

Peak rate of fall of reverse

recovery current

dirr/dt Tj=25°C - 1400 - A/µs

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

SPA SPA

Rth1 0.00769 0.00769 K/W Cth1 0.0003763 0.0003763 Ws/K

Rth2 0.015 0.015 Cth2 0.001411 0.001411

Rth3 0.029 0.029 Cth3 0.001931 0.001931

Rth4 0.114 0.163 Cth4 0.005297 0.005297

Rth5 0.136 0.323 Cth5 0.012 0.008453

Rth6 0.059 2.526 Cth6 0.091 0.412

SPP_ISPP_I

External Heatsink

TjTcase

Tamb

Cth1 Cth2

Rth1 Rth,n

Cth,n

Ptot (t)

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2007-08-30

Rev. 3.0 Page 5

SPP20N65C3, SPA20N65C3

SPI20N65C3

1 Power dissipation

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

TC

0

20

40

60

80

100

120

140

160

180

200

W

240 SPP20N65C3

Ptot

2 Power dissipation FullPAK

Ptot = f(TC)

0 20 40 60 80 100 120 °C 160

TC

0

5

10

15

20

25

W

35

Ptot

3 Safe operating area

ID= f ( VDS )

parameter : D = 0 , TC=25°C

10 010 110 210 3

V

VDS

-2

10

-1

10

0

10

1

10

2

10

A

ID

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

DC

4 Safe operating area FullPAK

ID = f (VDS)

parameter: D = 0, TC = 25°C

10 010 110 210 3

V

VDS

-2

10

-1

10

0

10

1

10

2

10

A

ID

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

tp = 1 ms

tp = 10 ms

DC

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2007-08-30

Rev. 3.0 Page 6

SPP20N65C3, SPA20N65C3

SPI20N65C3

5 Transient thermal impedance FullPAK

ZthJC = f(tp)

parameter: D = tp/t

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1

s

tp

-3

10

-2

10

-1

10

0

10

1

10

K/W

ZthJC

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

single pulse

6 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp= 10 µs, VGS

0 5 10 15 V 25

VDS

0

10

20

30

40

50

60

A

80

ID

4,5V

5V

5,5V

6V

6,5V

7V

20V

10V

8V

7 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: tp= 10 µs, VGS

0 2 4 6 8 10 12 14 16 18 20 22 V 25

VDS

0

5

10

15

20

25

30

35

A

45

ID

4.5V

5V

5.5V

6V

20V

10V

7V

8 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

0 5 10 15 20 25 30 A 40

ID

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

Ω

1.5

RDS(on)

4V

4.5V

5V

5.5V

6V

6.5V

20V

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2007-08-30

Rev. 3.0 Page 7

SPP20N65C3, SPA20N65C3

SPI20N65C3

9 Drain-source on-state resistance

RDS(on) = f(Tj)

parameter : ID = 13.1 A, VGS = 10 V

-60 -20 20 60 100 °C 180

Tj

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Ω

1.1 SPP20N65C3

RDS(on)

typ

98%

10 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

0 1 2 3 4 5 6 7 V 9

VGS

0

10

20

30

40

50

60

A

80

ID

150°C

25°C

12 Forward characteristics of body diode

IF = f (VSD)

parameter: T

j

, tp= 10 µs

0 0.4 0.8 1.2 1.6 2 2.4 V3

VSD

-1

10

0

10

1

10

2

10

A

SPP20N65C3

IF

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

11 Typ. gate charge

VGS =f (QGate)

parameter: ID = 20.7 A pulsed

0 20 40 60 80 100 nC 140

QGate

0

2

4

6

8

10

12

V

16 SPP20N65C3

VGS

0,8 VDS max

DS max

V

0,2

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Rev. 3.0 Page 8

SPP20N65C3, SPA20N65C3

SPI20N65C3

13 Typ. switching time

t = f(ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=3.6Ω

0 4 8 12 16 A 24

ID

0

10

1

10

2

10

ns

t

tr

td(off)

td(on)

tf

14 Typ. switching time

t = f (RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, ID=20.7 A

0 5 10 15 20 25 30 Ω40

RG

0

10

1

10

2

10

3

10

ns

t

td(off)

td(on)

tr

tf

15 Typ. drain current slope

di/dt = f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=20.7A

0 5 10 15 20 25 30 Ω40

RG

0

500

1000

1500

2000

2500

3000

3500

4000

A/µs

5000

di/dt

di/dt(on)

di/dt(off)

16 Typ. drain source voltage slope

dv/dt = f(RG), inductive load, Tj = 125°C

par.: VDS=380V, VGS=0/+13V, ID=20.7A

0 5 10 15 20 25 30 Ω40

RG

0

25

50

75

100

V/ns

150

dv/dt

dv/dt(on)

dv/dt(off)

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Rev. 3.0 Page 9

SPP20N65C3, SPA20N65C3

SPI20N65C3

17 Typ. switching losses

E = f (ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=3.6Ω

0 3 6 9 12 15 A 21

ID

0

0.01

0.02

0.03

0.04

0.05

0.06

mWs

0.08

E

Eon*

Eoff

*) Eon includes SPD06S60 diode

commutation losses

18 Typ. switching losses

E = f(RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V,ID=11A

0 5 10 15 20 25 30 Ω40

RG

0

0.05

0.1

0.15

0.2

0.25

0.3

mWs

0.4

E

Eon*

Eoff

*) Eon includes SPD06S60 diode

commutation losses

19 Avalanche SOA

IAR = f (tAR)

par.: Tj≤ 150 °C

10 -3 10 -2 10 -1 10 010 110 210 4

µs

tAR

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

A

7

IAR

Tj(Start)=25°C

Tj(Start)=125°C

20 Avalanche energy

EAS = f(Tj)

par.: ID = 3.5 A, VDD = 50 V

20 40 60 80 100 120 °C 160

Tj

0

100

200

300

400

500

mJ

700

EAS

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Rev. 3.0 Page 10

SPP20N65C3, SPA20N65C3

SPI20N65C3

22 Avalanche power losses

PAR = f (f )

parameter: EAR=1mJ

10 410 510 6

Hz

f

0

50

100

150

200

250

300

350

400

W

500

PAR

21 Drain-source breakdown voltage

V(BR)DSS = f(Tj)

-60 -20 20 60 100 °C 180

Tj

585

605

625

645

665

685

705

725

745

V

785 SPP20N65C3

V(BR)DSS

23 Typ. capacitances

C = f(VDS)

parameter: VGS=0V, f=1 MHz

0 100 200 300 400 V 600

VDS

0

10

1

10

2

10

3

10

4

10

5

10

pF

C

Ciss

Coss

Crss

24 Typ. Coss stored energy

Eoss=f(VDS)

0 100 200 300 400 V 600

VDS

0

1

2

3

4

5

6

7

8

9

10

11

12

µJ

14

Eoss

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2007-08-30

Rev. 3.0 Page 11

SPP20N65C3, SPA20N65C3

SPI20N65C3

Definition of diodes switching characteristics

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Rev. 3.0 Page 12

SPP20N65C3, SPA20N65C3

SPI20N65C3

PG-TO220-3-1, PG-TO220-3-21

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Rev. 3.0 Page 13

SPP20N65C3, SPA20N65C3

SPI20N65C3

PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute )

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Rev. 3.0 Page 14

SPP20N65C3, SPA20N65C3

SPI20N65C3

PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)

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2007-08-30

Rev. 3.0 Page 15

SPP20N65C3, SPA20N65C3

SPI20N65C3

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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characteristics.

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regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest

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For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

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cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

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