BDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATION POWER LINER AND SWITCHING APPLICATIONS Complement to BDX54, BDX54A, BDX54B and BDX54G respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : BDX53 Vesa 45 Vv : BDX53A 60 Vv : BDX53B 80 Vv : BDX53C 100 Vv Collector Emitter Voltage : BDX53 Vceo 45 Vv : BDXS53A 80 Vv : BDX53B a0 Vv : BDX53C 100 Vv Emitter Base Voltage Vega 5 v Collector Current (BC) le 8 A Collector Current (Pulse) le 12 A Base Current ls 02 A Collector Dissipation (Tc=25C} Pr 60 Ww Junction Temperature Ty 150 C Storage Temperature Tsts -65 ~ 150 C TO-220 1.Base 2.Collector 3.Emitter ELECTRICAL CHARACTERISTICS (T,=25c) Characteristic Symbol Test Conditions Min | Typ | Max | Unit *Collector Emitter Sustaining Voltage : BDX53 Veeo{sus) le = 100mA, Ip= 9 45 : BDX53A 60 Vv : BDX53B 80 Vv : BDX53G 100 Vv Collector Cutoff Current :BDX53 lego Vcp = 45V, le=0 200 pA : BDX53A Vep= 60V, IE=0 200 LA : BDX53B Vcp = 80V, lE=0 200 HA : BDX53G Vep= 100V, |-=0 200 WA Collector Cutoff Current :BDX53 leea Voe = 22V, Ip=0 500 WA : BDX53A Vee= 30V, Ip=0 500 WA : BDX53B Vee=40V, Ip=0 500 WA : BDX53 Vce = 50V, Ip=0 500 WA Emitter Cutoff Current lesa Veg=5V, In =0 2 mA *DC Current Gain Are Vece=3V, Ic=3A 750 *Gollector Emitter Saturation Voltage Vee(sat) le = 3A, lp=12mA 2 Vv *Base Emitter Saturation Voltage Vee(sat) le = 3A, lp= 12mA 25 Vv Parallel Diode Forward Voltage V; l= 3A 1.8 25 Vv l= 8A 25 Vv * Pulse Test: PW=300us, duty Cycle =1.5% Pulsed Rev. B es FAIRCHILD ee SEMICONDLIGTOR mu 1999 Fairchild Semiconductor CorporationBDX53/A/B/C NPN EPITAXIAL SILICON TRANSISTOR hee. DC CURRENT GAIN OC CURRENT GAIN o1 a2 03 | 2 & 10 IgA, COLLECTOR CURRENT SAFE OPERATING AREA COLLECTOR EMITTER SATURATION VOLTAGE Vcelsat|(), SATURATION VOLTAGE a1 O2 05 1 2 4 a 0 ke{A), COLLECTOA CURRENT POWER DERATING 3 3 a = = z 2 a o a & a 5 re a = 3 & 6 = 2 = < 1 2 5 wm a 50 100 208 S00) 100 a 25 50 7 100128180176 Vee} COLLECTOR EMITTER VOLTAGE Te(?C), CASE TEMPERATURE BASE EMITTER SATURATION YOLTAGE DAMPER DIODE FORWARD VOLTAGE 34 32 30 % 28 5 2s 3 = z z 74 S a > i 22 4 z = z 79 x = e "18 a = 3 16 = yo oi > 12 10 0.8 |! O1 02 os 1 2 5 10 20 o1 02 05 1 2 3 wv 20 Ici), COLLECTOR CURRENT ldqA), FORWARD CURRENT ee pe or ee SEMIGONDUSTOR mTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT QS FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE GHANGES WITHOUT FURTHER NOTIGE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNGTION OR DESIGN. FAIRGHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.