Fig 1. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.
Notes:
DirectFET Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Typical values (unless otherwise specified)
l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
lIdeal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
MX
Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-
state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries
used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher
frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-
induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
VDSS VGS RDS(on) RDS(on)
30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
Absolute Maximum Ratings
Parameter Units
VDS Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, VGS @ 10V
e
I
D
@ T
A
= 70°C Continuous Drain Current, VGS @ 10V
e
A
I
D
@ T
C
= 25°C Continuous Drain Current, VGS @ 10V
f
I
DM
Pulsed Drain Current
g
EAS Single Pulse Avalanche Energy
h
mJ
IAR Avalanche Current
g
A
21
12
Max.
21
150
212
±20
30
27
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
0
2
4
6
8
Typical RDS(on) (
mΩ)
TJ = 25°C
TJ = 125°C
ID = 27A
0 20406080
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
ID= 21A
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
28nC 8.2nC 3.5nC 34nC 20nC 1.8V
IRF8308MPbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014
Form Quantity
IRF8308MTRPbF DirectFET Medium Can Tape and Reel 4800 "TR" suffix
IRF8308MTR1PbF DirectFET Medium Can Tape and Reel 1000 "TR1" suffix EOL notice # 264
NoteOrderable part number Package Type Standard Pack
IRF8308MPbF
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 1.90 2.50 mΩ
––– 2.70 3.50
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V
ΔVGS(th)/ΔTJGate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 130 ––– ––– S
QgTotal Gate Charge ––– 28 42
Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.4 –––
Qgs2 Post-Vth Gate-to-Source Charge ––– 3.5 ––– nC
Qgd Gate-to-Drain Charge ––– 8.2 –––
Qgodr Gate Charge Overdrive ––– 7.9 ––– See Fig. 15
Qsw Switch Charge (Qgs2 + Qgd)––– 12 –––
Qoss Output Charge ––– 20 ––– nC
RGGate Resistance ––– 1.2 2.2
Ω
td(on) Turn-On Delay Time ––– 11 –––
trRise Time ––– 19 –––
td(off) Turn-Off Delay Time ––– 23 ––– ns
tfFall Time ––– 16 –––
Ciss Input Capacitance ––– 4404 –––
Coss Output Capacitance ––– 885 ––– pF
Crss Reverse Transfer Capacitance ––– 424 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 150
(Body Diode) A
ISM Pulsed Source Current ––– ––– 212
(Body Diode)
g
VSD Diode Forward Voltage ––– ––– 1.0 V
trr Reverse Recovery Time ––– 20 30 ns
Qrr Reverse Recovery Charge ––– 34 51 nC di/dt = 300A/μs
i
TJ = 25°C, IS = 21A, VGS = 0V
i
showing the
integral reverse
p-n junction diode.
VGS = 4.5V, ID = 21A
i
VDS = VGS, ID = 100μA
TJ = 25°C, IF =21A
VGS = 4.5V
ID = 21A
VGS = 0V
VDS = 15V
ID = 21A
VDD = 15V, VGS = 4.5V
i
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 27A
i
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
VDS = 15V
VDS = 24V, VGS = 0V, TJ = 125°C
MOSFET symbol
RG= 1.8Ω
VDS = 15V, ID =21A
Conditions
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
IRF8308MPbF
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
Thermal Response ( Z
thJA )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τι
0.99292 0.000074
2.171681 0.007859
24.14602 0.959
17.69469 32.6
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
τ
i
/
Ri
τ
a
τ
4
τ
4
R
4
R
4
Absolute Maximum Ratings
Parameter Units
P
D
@T
A
= 25°C Power Dissipation
e
W
P
D
@T
A
= 70°C Power Dissipation
e
P
D
@T
C
= 25°C Power Dissipation
f
T
P
Peak Soldering Temperature °C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JA Junction-to-Ambient
el
––– 45
R
θ
JA Junction-to-Ambient
jl
12.5 –––
R
θ
JA Junction-to-Ambient
kl
20 ––– °C/W
R
θ
JC Junction-to-Case
fl
––– 1.4
R
θ
J-PCB Junction-to-PCB Mounted 1.0 –––
Linear Derating Factor
e
W/°C
0.022
270
-40 to + 150
Max.
89
2.8
1.8
IRF8308MPbF
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Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
≤60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
≤60μs PULSE WIDTH
Tj = 150°C
2.5V
1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current
(Α)
TJ = 150°C
TJ = 25°C
TJ = -40°C
VDS = 10V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
Typical RDS(on) (Normalized)
ID = 27A
VGS = 10V
VGS = 4.5V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance(pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
020 40 60 80 100
ID, Drain Current (A)
1
2
3
4
5
6
Typical RDS(on) (
mΩ)
TJ = 25°C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
IRF8308MPbF
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Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage Fig11. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy Vs. Drain Current
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
VGS = 0V
TJ = 150°C
TJ = 25°C
TJ = -40°C
25 50 75 100 125 150
TC , Case Temperature (°C)
0
50
100
150
ID, Drain Current (A)
-75 -50 -25 025 50 75 100 125 150
TJ , Junction Temperature ( °C )
0.5
1.0
1.5
2.0
2.5
Typical VGS(th) Gate threshold Voltage (V)
ID = 100μA
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
0
10
20
30
40
50
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 7.2A
8.4A
BOTTOM 21A
0.1 1.0 10.0 100.0
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TA = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
IRF8308MPbF
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014
Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 16b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 17b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
Fig 17a. Switching Time Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
1K
VCC
DUT
0
L
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
IRF8308MPbF
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014
DirectFET Substrate and PCB Layout, MX Outline
(Medium Size Can, X-Designation).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
RGVDD
D.U.T
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
S
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF8308MPbF
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014
DirectFET Part Marking
GATE MARKING
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
C
D
E
F
G
H
J
K
L
M
P
0.017
0.028
0.007
0.040
0.095
0.156
0.028
0.018
0.028
MAX
0.250
0.38
0.59
0.08
0.88
2.28
3.85
0.68
0.35
0.68
MIN
6.25
4.80
0.42
0.70
0.17
1.02
2.42
3.95
0.72
0.45
0.72
MAX
6.35
5.05
0.015
0.023
0.003
0.090
0.035
0.152
0.027
0.027
0.014
MIN
0.189
0.246
METRIC IMPERIAL
DIMENSIONS
1.38 1.42
0.80 0.84
0.0560.054
0.0330.031
R 0.03 0.08 0.001 0.003
Please see AN-1035 for DirectFET assembly details, stencil and substrate design recommendations
DirectFET™ Outline Dimension, MX Outline
(Medium Size Can, X-Designation)
Dimensions are shown in
millimeters (inches)
0.199
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
IRF8308MPbF
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014
DirectFET Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING
DIMENSIONS IN MM CODE
A
B
C
D
E
F
G
H
IMPERIAL
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
1.60
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
METRIC
DIMENSIONS
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.063
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts (ordered as IRF8308MTRPBF).
REEL DIMENSIONS
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
IMPERIAL
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
STANDARD OPTION (QTY 4800)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
METRIC
IRF8308MPbF
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
MSL1
(per JEDEC J-STD-020D
†††
)
RoHS Compliant Yes
Qualification Information
†
Qualification level
Consumer
††
(per JEDEC JESD47F
†††
guidelines)
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of
the higher Industrial level.
Moisture Sensitivity Level DFET2
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Date
Comments
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264)
•
Added Qualification table on page 10
•
Updated data sheet with new IR corporate template
Revision History
2/24/2014
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
International Rectifier:
IRF8308MTRPBF