Ruttonsha International Rectifier Ltd. RUTTONSHA SILICON CONTROLLED RECTIFIERS 10RIA, 16RIA, 25RIA SERIES Power Silicon Controlled Rectifiers 25, 35, 40, Amp RMS SCRs Types : 10RIA10-10RIA140, 16RIA10-16RIA-140, 25RIA10-25RIA140 10/16/25 RIA FEATURES v All diffused series / UNF threading. v Full current rat ing @ 85 0C case tem perature. v High di/dt and dv/dt capabilities. v Excellent dynamic characteristics. v Glass passivation for high reliability. THERMAL MECHANICAL SPECIFICATIONS R thjc Maximum thermal resistance junction to case 10RIA 16RIA 25RIA 1.85 0C/W 1.15 0C/W 0.75 0C/W R thcs Contact thermal resistance case-to-sink 0.35 0C/W TJ Junction operating temp. range -65 0C to +125 0C T stg Storage temperature range -65 0C to +150 0C Mounting torque (Non-lubricated threads) 0.2 M-Kg min. 0.3 M-Kg max. Approximate weight 14 gms. UNIT:- M M ELECTRICAL RATINGS TYPE 10RIA / 16RIA / 25RIA 10 20 40 60 80 100 120 140 V DRM Max. repetitive peak off state voltage (V) (1) 100 200 400 600 800 1000 1200 1400 V RRM Max. repetitive peak reverse voltage (V) (2) 100 200 400 600 800 1000 1200 1400 V RSM Max. non-repetitive peak reverse voltage (V) (3) 150 300 500 700 900 1100 1300 1500 I RM & I DM Max. peak reverse & off state current @ rated V DRM & V RRM 125 0C -mA 20 10 10 10 10 10 10 10 SILICON CONTROLLED RECTIFIERS 10 RIA, 16 RIA, 25 RIA SERIES ELECTRICAL SPECIFICATIONS 10RIA 16RIA 25RIA I T(RMS) Maximum RMS on-state current (A) 25 35 40 I T(AV) Maximum average on-state current 180 0 conduction case temperature 85 0C (A) 10 16 25 I TSM Maximum peak one cycle non-repetitive surge current : (A) No voltage reapplied 50 Hz. Initial 225 270 190 225 340 395 285 335 420 470 350 395 100% V RRM Reapplied, sinusoidal 10ms half period I 2t Max. I 2t for fusing (A 2Sec) t = 10ms 100% V RRM Reapplied t = 1.5ms Initial Initial Initial TJ TJ TJ TJ = = = = 125 0C 45 0C 125 0C 45 0C (4) TJ TJ TJ TJ = = = = 125 0C 45 0C 125 0C 45 0C 180 255 100 140 405 555 220 303 615 780 335 425 10A (32A peak) 16A (50A peak) 25A (79A peak) 1.75 1.75 1.70 V TM Maximum peak on-state voltage @ 25 0C, 180 0C conduction I T(AV) (V) IH Maximum holding current @ 25 0C (mA) (5) 100 IL Maximum latching current @ 25 C (6) 200 tgt Typical turn-on time T J = 25 C ( sec) trr Typical reverse recovery time T J = 125 0C ( sec) (8) 4.0 tq Typical turn-off time T J = 125 0C ( sec) (9) 110 dv/dt Critical rate of rise of off state voltage T J = 125 0C Exponeantial to 100% V DRM (V/s) Exponeantial to 67% V DRM (V/s) di/dt 0 (7) 0 0.9 100 300 Maximum repetitive rate of rise of turned on current V DRM 600V (A/s) (10) 200 TRIGGERING P GM Maximum peak gate power 125 0C (W) 8.0 P G(AV) Maximum average gate power 125 0C (W) 2.0 I GM Maximum peak positive gate current 125 0C (A) 1.5 - V GM Maximum peak negative gate voltage 125 0C (V) 10.0 -65 C 90.0 25 C 60.0 125 0 C 35.0 -65 C 3.0 25 C 2.0 125 C 1.0 0 I GT Maximum required gate current to trigger (mA) 0 0 V GT Maximum required gate voltage to trigger (V) 0 0 VGD Maximum required gate voltage that will not trigger 125 0C V (11) 0.2 SILICON CONTROLLED RECTIFIERS SILICON CONTROLLED RECTIFIERS SILICON CONTROLLED RECTIFIERS SILICON CONTROLLED RECTIFIERS Last Update : July 2000