MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# SS8550 Features * * * * * * TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25 OC) of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: SS8550 PNP Silicon Transistors TO-92 A C E BE Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 40 --- Vdc 25 --- Vdc 6.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc B OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, IE =0) Collector Cutoff Current (VCE=20Vdc, IB =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) C D ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB DC Current Gain (IC=100mAdc, V CE=1.0Vdc) DC Current Gain (IC=800mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=800mAdc, IB =80mAdc) Base-Emitter Saturation Voltage (IC=800mAdc, IB =80mAdc) Base- Emitter Voltage (IE =1.5Adc) 85 300 --- 40 --- --- --- 0.8 Vdc --- 1.2 Vdc --- 1.8 Vdc Transistor Frequency (IC=50mAdc, VCE=10Vdc, f=30MHz) 190 --- CLASSIFICATION OF HFE (1) Rank Range B 85-160 DIMENSIONS INCHES SMALL-SIGNAL CHARACTERISTICS fT G C 120-200 D 160-300 MHz DIM A B C D E G MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com Revision: 2 2003/06/30