©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93CF
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
IC Collector Current (DC) 12 A
ICP *Collector Current (Pulse) 15 A
IB Base Current 0.2 A
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 100 V
ICBO Collector Cut-off Current VCB = 100V, IE = 0 100 µA
ICEO Collector Cut-off Current VCE = 100V, IB = 0 1 mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V, IC = 3A
VCE = 3V, IC = 5A
VCE = 3V, IC = 10A
1000
750
100 20000
VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 20mA
IC = 10A, IB = 100mA 2
3 V
V
VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 20mA
IC = 10A, IB = 100mA 2.5
4 V
V
VF* Parallel Diode Forward Voltage IF = 5A
IF = 10A 1.3
1.8 2
4 V
V
BDW93CF
Hammer Drivers,
Audio Amplifiers Applications
• Power Darlington TR
• Complement to BDW94CF respectively
1
1.Base 2.Collector 3. Em itter
TO-220F
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93CF
Typical character istics
Figure 1. DC Current Gain Figure 2 . C o llector-Emi tt e r Saturation Vol tage
Figure 3. Base-Emitter On Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0.1 1 10 100
100
1k
10k
100k
VCE = 3V
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
0.1 1 10 100
0.1
1
10
IC= 250 IB
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
0.0 0.8 1.6 2.4 3.2 4.0
0
4
8
12
16
20
VCE = 3 V
IC [A], COLLECTOR CURRENT
VBE [V], BASE-EMITT ER VOLTAGE
110100
10
100
1000 f=1MHz
IE=0
Cob [pF], OUTPUT CAPACTIANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
0.1
1
10
100
100 us
1 ms
5 ms
DC
IC MAX.
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR EMITTER VOLTAGE
0 255075100125150175
0
10
20
30
40
50
PD [W], PO W ER DIS S IPATIO N
TC [oC], CASE TEMPERAT URE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BDW93CF
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
Product Folder - Fairchild P/N BDW93CF - NPN Epitaxial Silicon Transistor
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Contents
Features | Applications | Product
status/pricing/packaging | Models
Features
● Power Darlington TR
● Complement to BDW94CF respectively
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Applications
Hammer Drivers, Audio Amplifiers
>
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Product status/pricing/packaging
Product Product status Pricing* Package type Leads Packing method
BDW93CFTU Full Production $0.464 TO-220F 3 RAIL
* 1,000 piece Budgetary Pricing
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Models
Package & leads Condition Temperature range Software version Revision date
PSPICE
TO-220F-3 Electrical/Thermal -25°C to 100°C 9 Feb 2, 2001
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