MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT2222A Features * * Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 1P B E Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Min Max SOT-23 Units A OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX D Collector-Emitter Breakdown Voltage* (I C=10mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10Adc, IC=0) Base Cutoff Current (VCE=60Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=60Vdc, VBE=3.0Vdc) 40 Vdc 75 Vdc 6.0 Vdc 20 nAdc 10 nAdc VCE(sat) VBE(sat) DC Current Gain* (I C=0.1mAdc, VCE=10Vdc) (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=150mAdc, VCE=10Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) F 35 50 75 100 50 40 0.6 H Cobo Cibo NF Current Gain-Bandwidth Product (I C=20mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=10Vdec, IE=0, f=1.0MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Noise Figure (IC=100Adc, VCE=10Vdc, RS=1.0k f=1.0kHz) DIMENSIONS 300 0.3 1.0 Vdc 1.2 2.0 Vdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 300 pF 25 pF 4.0 dB Delay Time (VCC=30Vdc, VBE=0.5Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) 300s, Duty Cycle 2.0% 10 25 225 60 ns ns ns ns MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout MHz 8.0 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 .031 .800 .035 .900 .079 2.000 SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width J K SMALL-SIGNAL CHARACTERISTICS fT B E G ON CHARACTERISTICS hFE C .037 .950 www.mccsemi.com .037 .950 inches mm MCC MMBT2222A Collector Current vs Collector-Emitter Voltage DC Current Gain vs Collector Current 480 8 VCE = 5.0V 35A 30A 400 6 320 25A IC - (mA) hFE 20A 4 240 15A 160 10A 2 5A 80 0 0.1 10 1 10 100 20 30 40 50 VCE- (V) IC (mA) Maximum Power Dissipation vs Ambient Temperature Collector Current vs Collector-Emitter Voltage 800 250 IB = 4mA 600 200 TO-92 IB = 3mA PD(MAX) - (mW) IC - (mA) IB = 2mA 150 400 IB = 1mA 100 200 SOT-23 0 50 .5 0 1.0 1.5 0 2.0 50 100 150 200 TA - (C) VCE - (V) Contours of Constant Gain Bandwidth Product (fT) Input and Output Capacitance vs Reverse Bias Voltage 24 12 20 f = 1.0MHz 10 CIB 16 pF VCE - (V) 12 8 6 8 COB 4 4 0 0.1 1.0 10 IC - (mA) *50MHz increments from 150 to 250MHz and 260MHz 100 2 0.1 1.0 Volts - (V) www.mccsemi.com 10 MCC MMBT2222A Base Saturation Voltage vs Collector Current Collector Saturation Voltage vs Collector Current 1.4 1.4 1.0 IC/IB = 10 1.0 .6 .6 VCE(SAT) - (V) VBE(SAT) - (V) hfe=10 .1 .1 hfe=20 .06 TA = 125C .06 TA = 25C .01 1.0 10 1000 100 .01 0.1 1.0 IC - (mA) 10 100 IC - (mA) Base Saturation Voltage vs Collector Current 14 Collector Saturation Voltage vs Collector Current 4 IC/IB = 10 TA = 25C 10 1 6 .6 VBE(SAT) - (V) VCE(SAT) - (V) 1 0.6 .1 TA=25C .06 hfe=20 hfe=10 TA=125C 0.1 1.0 10 1000 100 .01 0.1 1.0 10 IC - (mA) IC - (mA) Switching Times vs Collector Current 1000 IB1 = IB2 = IC/10 ts 100 T - (ns) tr 10 tf td 1.0 1.0 10 100 IC - (mA) www.mccsemi.com 100