MMBT2222A
Document number: DS30041 Rev. 13 - 2 1 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222A
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT2907A)
Ideal for Low Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound, UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Leads; Solderable per MIL-STD-
202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Note 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT2222A-7-F AEC-Q101 K1P / C1P 7 8 3,000
MMBT2222A-13-F AEC-Q101 K1P / C1P 13 8 10,000
MMBT2222AQ-7-F Automotive K1P 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K = SAT (Shanghai Assembly / Test site)
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
K1P
YM
Device Symbol Top View
Pin-Out
Top View
SOT23
C
E
B
C
E
B
C = CAT (Chengdu Assembly / Test site)
1P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
MMBT2222A
Document number: DS30041 Rev. 13 - 2 2 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222A
Maximum Ratings (@TA = +25°C unless otherwise specified)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous IC 600 mA
Peak Collector Current ICM 800 mA
Thermal Characteristics (@TA = +25°C unless otherwise specified)
Characteristic Symbol Value Unit
Collector Power Dissipation (Note 6) PD 310 mW
(Note 7) 350
Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 °C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) RθJL 350 °C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; the device is
measured when operating in a steady-state condition.
7. Same as Note 6, except the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB
8. Thermal resistance from junctio n to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT2222A
Document number: DS30041 Rev. 13 - 2 3 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222A
Thermal Characteristics
0 255075100125150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
Ma x Powe r Di ssipati on (W )
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Therm al Imped an ce
D=0.5
D=0.2 D=0.1 Single Pulse
D=0.05
The rmal R esist a n ce C/ W )
Pu l se Wid th (s )
10m 100m 1 10 100 1k
0.1
1
10 Single Pulse. Tamb=25°C
Pulse Power Dissipation
Pu l se Width (s)
Max P owe r Dissip at i on (W)
MMBT2222A
Document number: DS30041 Rev. 13 - 2 4 of 7
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© Diodes Incorporated
MMBT2222A
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 9) Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 75 V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 40 V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6.0 V IE = 100μA, IC = 0
Collector Cutoff Current ICBO 10 nA
μA VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
Collector Cutoff Current ICEX 10 nA VCE = 60V, VEB
(
OFF
)
= 3.0V
Emitter Cutoff Current IEBO 10 nA VEB = 3.0V, IC = 0
Base Cutoff Current IBL 20 nA VCE = 60V, VEB
(
OFF
)
= 3.0V
ON CHARACTERISTICS (Note 9)
DC Current Gain hFE
35
50
75
100
40
50
35
300
IC = 100μA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(sat) 0.3
1.0 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(sat) 0.6
1.2
2.0 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 8 pF VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure NF 4.0 dB VCE = 10V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td 10 ns VCC = 30V, IC = 150mA,
VBE
(
off
)
= - 0.5V, IB1 = 15mA
Rise Time tr 25 ns VCC = 3.0V, IC = 150mA, IB1 = 15mA,
VBE
(
OFF
)
= 0.5V
Storage Time ts 225 ns VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time tf 60 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
Notes: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
MMBT2222A
Document number: DS30041 Rev. 13 - 2 5 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222A
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current
C
T = -25°C
A
T = 25°C
A
T = 125°C
A
V = 1.0V
CE
110 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 2 Typical Collector-Emitter Saturation V oltage
vs. Col lecto r Cu r rent
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10.1 10 100
V , BASE-EMI
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Figure 3 Base-Emitter Turn-On Voltage
vs. Collector Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
CAPACITANCE (pF)
0
5
10
15
20
25
30
3
5
0246810 12 14 16 18 20
f = 1MHz
C
obo
C
ibo
V , REVERSE VOLTS (V)
Fig ur e 4 Typical Capacit ance Ch ar acteristics
R
1
10
100
1,000
110100
I , COLLECTOR CURRENT (mA)
Figure 5 Typical Gain Bandwidth Product
vs. Collector Current
C
f,
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Figure 6 Typical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
MMBT2222A
Document number: DS30041 Rev. 13 - 2 6 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222A
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
MMBT2222A
Document number: DS30041 Rev. 13 - 2 7 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222A
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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