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2
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
ISL9R860P2, ISL9R860S3ST
Features
Applications
•SMPS FWD
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
•Snubber Diode
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol Parameter RatingsUnit
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current (TC = 147oC) 8 A
IFRM Repetitive Peak Surge Current (20kHz Square Wave) 16 A
IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A
PDPower Dissipation 85 W
EAVL Avalanche Energy (1 A, 40 mH) 20 mJ
TJ, TSTG Operating and Storage Temperature Range -55 to 175 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
JEDEC TO-263AB(D2-PAK)
JEDEC TO-220AC-2L
CATHODE
(FLANGE)
ANODE
N/C
Package Symbol
•Stealth Recovery trr = 28 ns (@ IF = 8 A)
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
•600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
8 A, 600 V, STEALTH™ Diode
The ISL9R860P2, ISL9R860S3ST is a STEALTH™ diode
optimized for low loss performance in high frequency hard
switched applications. The STEALTH™ family exhibits low
reverse recovery current (IRR) and exceptionally soft recovery
under typical operating conditions. This device is intended for
use as a free wheeling or boost diode in power supplies and
other power switching applications. The low IRR and short ta
phase reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional
snubber circuitry. Consider using the STEALTH™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev.
www.fairchildsemi.com1
Description
August 2018
ISL9R860P2, ISL9R860S3ST Rev. 2
R860S3S
R860P2
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Symbol Parameter Test Conditions Min Typ Max Unit
IRInstantaneous Reverse Current VR = 600 VTC = 25°C - - 100 µA
TC = 125°C - - 1.0 mA
VFInstantaneous Forward Voltage IF = 8 ATC = 25°C - 2.0 2.4 V
TC = 125°C - 1.6 2.0 V
CJJunction Capacitance VR = 10 V, IF = 0 A- 30 - pF
trr Reverse Recovery Time IF = 1 A, diF/dt = 100 A/µs, VR = 30 V- 18 25 ns
IF = 8 A, diF/dt = 100 A/µs, VR = 30 V- 21 30 ns
trr Reverse Recovery Time IF = 8 A,
diF/dt = 200 A/µs,
VR = 390 V, TC = 25°C
-28-ns
Irr Reverse Recovery Current - 3.2 - A
Qrr Reverse Recovery Charge - 50 - nC
trr Reverse Recovery Time IF = 8 A,
diF/dt = 200 A/µs,
VR = 390 V,
TC = 125°C
-77-ns
S Softness Factor (tb/ta)-3.7-
Irr Reverse Recovery Current - 3.4 - A
Qrr Reverse Recovery Charge - 150 - nC
trr Reverse Recovery Time IF = 8 A,
diF/dt = 600 A/µs,
VR = 390 V,
TC = 125°C
-53-ns
S Softness Factor (tb/ta)-2.5-
Irr Reverse Recovery Current - 6.5 - A
Qrr Reverse Recovery Charge 195 - nC
dIM/dt Maximum di/dt during tb- 500 - A/µs
RθJC Thermal Resistance Junction to Case - - 1.75 °C/W
RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W
RθJA Thermal Resistance Junction to Ambient TO-263 62 °C/W
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
2
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
ISL9R860P2 TO-220AC-2L Tube N/A N/A 50
ISL9R860S3ST TO-263AB(D2-PAK) Reel 13" Dia 24mm 800
ISL9R860P2, ISL9R860S3ST Rev. 2
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage
Figure 3. ta and tb Curves vs Forward Current
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. ta and tb Curves vs diF/dt
Figure 5. Maximum Reverse Recovery Current
vs Forward Current
Figure 6. Maximum Reverse Recovery Current
vs diF/dt
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
0 0.5 0.75 1 2.50.25 1.5 2 2.25
0
2
4
6
8
10
12
14
16
2.75
25oC
175oC
150oC
100oC
125oC
1.751.25
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (µA)
100
10
1
100 200 300 500 600400
0.1
25oC
175oC
150oC
125oC
100oC
IF, FORWARD CURRENT (A)
0
0
10
20
30
40
50
60
10 16
t, RECOVERY TIMES (ns)
70
80
2 4 6 8 12 14
VR = 390V, TJ = 125°C
tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs
ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs
100
0
10
20
30
40
50
60
700 1000
t, RECOVERY TIMES (ns)
200 300 400 500 600 800 900
70
80
90
VR = 390V, TJ = 125°C
tb AT IF = 16A, 8A, 4A
ta AT IF = 16A, 8A, 4A
IF, FORWARD CURRENT (A)
0
2
3
4
5
6
7
8
16
Irr, MAX REVERSE RECOVERY CURRENT (A)
diF/dt = 800A/µs
diF/dt = 500A/µs
diF/dt = 200A/µs
VR = 390V, TJ = 125°C
9
10
11
2 4 6 8 10 12 14
diF/dt, CURRENT RATE OF CHANGE (A/µs)
100
0
2
4
6
8
10
700 1000
Irr, MAX REVERSE RECOVERY CURRENT (A)
VR = 390V, TJ = 125°C
IF = 16A
IF = 8A
IF = 4A
12
14
200 300 400 500 600 800 900
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
3
ISL9R860P2, ISL9R860S3ST Rev. 2
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs diF/dt
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 8. Reverse Recovery Charge vs diF/dt
Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves (Continued)
100
1
2
3
4
5
6
700 1000
VR = 390V, TJ = 125°C
IF = 16A
IF = 8A
IF = 4A
S, REVERSE RECOVERY SOFTNESS FACTOR
200 300 400 500 600 800 900 50
100
150
200
250
300
350
VR = 390V, TJ = 125°C
IF = 16A
IF = 8A
IF = 4A
QRR, REVERSE RECOVERY CHARGE (nC)
100 700 1000200 300 400 500 600 800 900
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0
200
400
600
800
1000
1200
0.1 100101
4
0150 155 165140 175160
6
8
10
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
170145
2
t, RECTANGULAR PULSE DURATION (s)
10-5 10-2 10-1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
0.01
10-4 10-3
SINGLE PULSE
100
0.1
101
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
1.0
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
4
ISL9R860P2, ISL9R860S3ST Rev. 2
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
Test Circuits and Waveforms
Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage
Waveforms
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
RG CONTROL diF/dt t1
AND t2 CONTROL IF
+
-
dt
diF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
Q1
I = 1A
L = 40mH
VDD = 50V
IV
t0t1t2
IL
VAVL
t
IL
©2001 Fairchild Semiconductor Corporation www.fairchildsemi.com5
ISL9R860P2, ISL9R860S3ST Rev. 2
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
Mechanical Dimensions
Figure 16. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the draw ing and contact a F airchild Semicond uctor r epresentative to ver ify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0B2.
www.fairchildsemi.com
6
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
Package Dimensions
Figure 17. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or da te on the d rawing and contact a Fairchild Semicondu ctor re presentative to verify o r
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’ s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002.
www.fairchildsemi.com
7
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode
www.fairchildsemi.com
8
©2001 Fairchild Semiconductor Corporation
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Definition of Terms
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®*
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®
™
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