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DATA SH EET
Product data sheet
Supersedes data of 2004 Jan 13 2004 Mar 15
DISCRETE SEMICONDUCTORS
BSR19; BSR19A
NPN high voltage transistors
2004 Mar 15 2
NXP Semiconductors Product data sheet
NPN high voltage transistors BSR19; BSR19A
FEATURES
Low current (ma x. 300 mA)
High voltage (max. 160 V).
APPLICATIONS
General purpose switc hing and amplification
Especially used for te lephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BSR20 and BSR20A.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BSR19 56* or U35
BSR19A 57* or U36
PIN DESCRIPTION
1base
2emitter
3collector
Fig.1 Simplified outline (SOT23 ) and symbo l .
handbook, halfpage
21
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BSR19 plastic surface mounted packag e; 3 leads SOT23
BSR19A plastic surface mounted packag e; 3 leads SOT23
2004 Mar 15 3
NXP Semiconductors Pr oduct data sheet
NPN high voltage transistors BSR19; BSR19A
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
THERMAL CHARACTE RISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BSR19 160 V
BSR19A 180 V
VCEO collector-emitter voltage open base
BSR19 140 V
BSR19A 160 V
ICM peak collector current 600 mA
Ptot total power dissipation Tamb 25 °C250 mW
hFE DC current gain IC = 10 mA; VCE = 5 V
BSR19 60
BSR19A 80
fTtransition freque ncy IC = 10 mA; VCE = 10 V; f = 100 MHz 100 300 MHz
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BSR19 160 V
BSR19A 180 V
VCEO collector-emitter voltage open base
BSR19 140 V
BSR19A 160 V
VEBO emitter-base voltage open collector 6 V
ICcollector current (DC) 300 mA
ICM peak collector current 600 mA
IBbase current (DC) 100 mA
Ptot total power dissipation Tamb 25 °C250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Mar 15 4
NXP Semiconductors Pr oduct data sheet
NPN high voltage transistors BSR19; BSR19A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current
BSR19 IE = 0 A; VCB = 100 V 100 nA
IE = 0 A; VCB = 100 V; Tamb = 100 °C100 µA
ICBO collector cut-off current
BSR19A IE = 0 A; VCB = 120 V 50 nA
IE = 0 A; VCB = 120 V; Tamb = 100 °C50 µA
IEBO emitter cut-off current IC = 0 A; VEB = 4 V 50 nA
hFE DC current gain IC = 1 mA; VCE = 5 V
BSR19 60
BSR19A 80
DC current gain IC = 10 mA; VCE = 5 V
BSR19 60 250
BSR19A 80 250
DC current gain IC = 50 mA; VCE = 5 V
BSR19 20
BSR19A 30
VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA 150 mV
VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 5 mA
BSR19 250 mV
BSR19A 200 mV
Cccollector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 6pF
fTtransition freque ncy IC = 10 mA; VCE = 10 V; f = 100 MHz 100 300 MHz
2004 Mar 15 5
NXP Semiconductors Pr oduct data sheet
NPN high voltage transistors BSR19; BSR19A
handbook, full pagewidth
0
120
160
40
80
MGD814
10111010
2103
hFE
IC mA
VCE = 5 V
Fig.2 DC current gain; typical values.
2004 Mar 15 6
NXP Semiconductors Pr oduct data sheet
NPN high voltage transistors BSR19; BSR19A
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Mar 15 7
NXP Semiconductors Pr oduct data sheet
NPN high voltage transistors BSR19; BSR19A
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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does not give any representations or warranties,
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consequenc es of use of such information.
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published in this doc ument, including without limitation
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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regulations. Export might require a prior authorization from
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this document does not fo rm p art o f an y q uot ation or co ntract, is believed to be accurate a nd reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/04/pp8 Date of release: 2004 Mar 15 Document orde r number: 9397 750 12911