MOTOROLA SC {XSTRS/R FH 8 367254 MOTOROLA SG 44 DE ffeae7254 ooae034 4 i CXSTRS/R F > MAXIMUM RATINGS Rating Symbol | MPS2907 MPS2807A | Unit Collector-Emitter Voltage VcEO 40 60 Vde Collector-Base Voltage VcBo 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous Io 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw Ta = 28C Derate above 25C 18 mWFC Thermal Resistance Junction to Ambient RaJa 556 CimW Total Device Dissipation Pp 300 mW Alumina Substrate,** Ta = 25C Derate above 25C 24 mWwPrc Thermal Resistance Junction to Ambient ReJA 417 cimWw Junction and Storage Temperature TJ. Tstg 150 C *FR-5 = 1.0 x 0.75 x 0,62 in. *#Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING [ MMBT2907 = 2B; MMBT2907A = 2F ELECTRICAL CHARACTERISTICS (Tp = 25C unless otherwise noted.) GENERAL PURPOSE TRANSISTOR gen 82036. OD T2975 MMBT2907 MMBT2907A CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) Dy 3 Collector i Base 2 Emitter PNP SILICON Refer to (MPS2907 for graphs, [ Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BR)CEO Vdc (Ig = 10 mAde, Ig = 0} MMBT2907 40 _ MMBT2907A 60 _ Callector-Base Breakdown Voltage ViBRICBO 60 _ Vde {lc = 10 pAde, ig = 0) Emitter-Base Breakdown Voltage ViBR)EBO 5.0 _ Vde (Ig = 10 pAde, Ic = 0) Collector Cutoff Current IcEx - 50 nAdc (VcE = 30 Vde, VEE(off) = 0-5 Vde) Collector Cutoff Current icBo pAdc {Vcp = 50 Vdo, Ip = 0} MMBT2907 _ 0.020 MMBT2907A - 0.010 (Vop = 50 Vdc, Ip = 0, Ta = 125C) MMBT2907 _ 20 MMBT2907A 10 Base Current IB _ 50 nAde (VcE = 30 Vde, VBE(off) = 0.5 Vde) ON CHARACTERISTICS DC Current Gain NEE (Ig = 0.1 mAde, VcE = 10 Vde} MMBT2907 35 _ MMBT2907A 75 _ (I = 1.0 mAde, VcE = 10 Vde) MMBT2907 50 _ MMBT2807A 100 _ {I = 10 mAde, Voce = 10 Vdc} MMBT2907 75 _ MMBT2907A 100 _ (I = 150 mAdc, Voge = 10 Vde){i) MMBT2907, MMBT2907A 100 300 (Ic = 500 mAdc, VcE = 10 Vde)(1) MMBT2907 30 _ MMBT2907A 50 - Collector-Emitter Saturation Voltage(1} VcE(sat) Vde (Il = 150 mAde, Ip = 15 mAdc} - 04 (ic = 500 mAde, Ig = 50 mAde} 1.6 Base-Emitter Saturation Voltage(1} VBE(sat) Vde (Ic = 150 mAde, Ig = 15 mAdc) = 1.3 (I = 500 mAde, Ip = 50 mAdc) _ 2.6 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-101MOTOROLA SC IXSTRS/R FF 4b DE uaezesy OoO8203? oO i | 6367254 MOTOROLA SC CXSTRS/R F) 86D 82037 D MMBT2907,A T2 g- 15 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic | Symbol | Min i Max | Unit | SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product(1},(2) "ty 200 _ MHz lic = 50 mAdc, Vee = 20 Vde, f = 100 MHz} Output Capacitance Cobo _ 8.0 pF (Vep = 10 Vdc, Ip = 0, f = 1.0 MHz) {input Capacitance Cibo _ 30 pF {VBE = 2.0 Vde, Ic = 0, f = 1.0 MH?) SWITCHING CHARACTERISTICS Turn-On Time ton _ 45 ns i (Voc = 30 Vde, Ic = 150 mAdc, Delay Time ig1 = 15 mAde) ta ~ 10 ns Rise Time tr _ 40 ne Turn-Off Time toff _ too Ts (Voc = 6.0 Vde, Ic = 150 mAdc, Storage Time Ini = Iga = 15 mAdo) te _ #0 he Falt Time tf 30 ws (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. {2) fy is defined as the frequency at which [hfel extrapolates to unity. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS * 3-102 esMOTOROLA SC {XSTRS/R FF 6367254 MOTOROLA SC CXSTRS/R F) MAXIMUM RATINGS _ Rating Symbol Value Unit Collector-Emitter Voltage VcEO 12 Vde Collector-Base Voltage VcBo 12 Vde Emitter-Base Voltage VEBO 4.0 Vde Collector Current Continuous Ic 80 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw Ta = 25C Derate above 25C 18 mWFC Thermal Resistance Junction to Ambient Raa 556 CimW Total Device Dissipation Pp 300 mw Alumina Substrate,** Ta = 25C Derate above 25C 24 mWFrC Thermal Resistance Junction to Ambient Rea A417 CimW Junction and Storage Temperature Ty Tstg 150 C *FR-5 = 1.0 x 0.75 x 0.62 in. *#Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING S6D 82038 ye MMBT3640 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) 3 Collector x: 3 1 Ny pase 2 2 Emitter SWITCHING TRANSISTOR PNP SILICON | mmBT3640 = 2J | ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Refer to MPS3640 for graphs. | Characteristic [ Symbol | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 100 nAdc, VgE = 0} VIBRICES 12 _- Vde Collector-Emitter Sustaining Voltage(1) {Ic = 10 mAdc, Ip = 0} VcEO(sus) 12 _ Vdc Collector-Base Breakdown Voltage (ic = 100 wAde, IE = 0} ViBR)CBO 12 _ Vde Emitter-Base Breakdown Voltage (Ig = 100 uAdc, ic = 0} ViBRIEBO 4.0 _- Vdc Collector Cutoff Current (VcgE = 6.0 Vdc, Vge = 0) IcES 0.01 pAdc (VcE = 6.0 Vde, VBE = 0, Ta = 65C) - 1.0 Base Current (Vcg = 6.0 Vdc, Vee = 0) Ig - 10 nAdc ON CHARACTERISTICS(1) DC Current Gain {Ic = 10 mAdc, VcE = 0.3 Vdc) hFE 30 120 _ (lc = 50 mAdc, Vcg = 1.0 Vdc) 20 _- Collector-Emitter Saturation Voltage (Ic = 10 mAde, Ig = 1.0 mAdc) VcEtsat) _ 0.2 Vde {I = 50 mAde, Ip = 5.0 mAdc} 06 {l = 10 mAdc, Ig = 1.0 mAdc, Ta = 65C) 0.25 Base-Emitter Saturation Voltage (Ic = 10 mAdc, 1g = 0.5 mAdc) VBE(sat) 0.75 0.95 Vde llc = 10 mAdge, Ig = 1.0 mAdc) 0.8 1.0 (i = 50 mAde, Ip = 5.0 mAdc} _ 15 SMALL SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product (I = 10 mAdc, Vce = 5.0 Vde, f = 100 MHz) ft 500 _ MHz Output Capacitance (Veg = = 5.0 Vde, Ie = 0, f = 1.0 MHz) Cobo _- 3.6 pF Input Capacitance (Vpe = 0.5 Vde, Ic = 0, f = 1.0 MHz} Cibo _ 3.5 pF SWITCHING CHARACTERISTICS Delay Time (Veco = 6.0 Vde, Ig = 50 mAdc, VBE(off) = 1.9-Vde, tg _ 10 ns Rise Time gq = 5.0 mAdc) tr - 30 ns Storage Time (Vee = 6.0 Vde, Ic = 50 mAde, Igy = Iga = 5.0 mAdc) ts _ 20 ns Fall Time tt _ 12 ns Turn-On Time ton ns (Vcc = 6.0 Vde, Ic = 50 mAde, Vge(oft) = 1.9 Vde, Ip1 = 5.0 mAde) _ 25 (Vec = 1.5 Vde, Ic = 10 mAde, Ig1 = 0.5 mAdc) - 60 Turn-Off Time toff ns (Vcc = 6.0 Vde, I = 50 mAde, Vge(ofty = 1.9 V. Ip1 = Ip2 = 5.0 mAds) _ 35 (Vcc = 1.5 Vde, I = 10 mAdc, Ig1 = Ip2 = 0.5 mAdc) ~ 16 {i} Pulse Test: Pulse Width < 300 ys, Duty Cycle = 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-103 D 3%-/s~ 4h pe icanzes4 0082038 i Acer mnsntmommemememmenMOTOROLA SC {XSTRS/R FI Gh DE bab?7es4 0082039 4 6367254 MOTOROLA SC (XSTRS/R F) ~ MAXIMUM RATINGS ~~ Sep 82039 OD | TH 2I-/ Rating Symbol Vatue Unit Collector-Emitter Voltage VcEO 40 Vde MMBT3903 : Collector-Base Voltage Vcpo 60 Vdc MMBT3904 Emitter-Base Voltage VEBO 6.0 Vde Collector Current Continuous Ic 200 mAdc CASE 318-03, STYLE 6 SOT-23 (TO-236AA/AB) THERMAL CHARACTERISTICS . Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board,* Pp 225 mw 3 Collector . Ta = 26C 3 Derate above 25C 1.8 mwrc 2 1 ' Thermal Resistance Junction to Ambient Raa 556 *c/mW 1 ad Base Total Device Dissipation Pp 300 mw 2 2 Emitter . Alumina Substrate,** Ta = 25C Derate above 25C 2.4 mWFC Thermal Resistance Junction to Ambient Raa 417 sCimW Junction and Storage Temperatura Ty. Tstg 150 c GENERAL PURPOSE TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina, NPN SILICON DEVICE MARKING MMBT3903 = 1Y; MMBT3904 = 1A | Refer to 2N3903 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.} | Characteristic | Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1)} VIBRICEO 40 _ Vde {ig = 1.0 mAdc, Ig = 0) Collector-Base Breakdown Voltage ViBR)CBO 60 - Vde ' (Ig = 10 pAde, lg = 0) Emitter-Base Breakdown Voltage V(BRJEBO 6.0 - Vde (IE = 10 pAde, Ic = 0) Base Cutoff Current IBL _ 50 nAde (Vce = 30 Vde, Veg = 3.0 Vde) Collector Cutoff Current Icex _ 50 nAde (VcE = 30 Vdc, Veg = 3.0 Vde) i ON CHARACTERISTICS DC Current Gain(1) hre (Ip = 0.1 mAdc, Veg = 1.0 Vde} MMBT3803 20 - MMBT3904 40 _ t (Il = 1.0 mAdc, Voge = 1.0 Vdc) MMBT3903 35 - MMBT3904 70 _ (Ig = 10 mAdc, Veg = 1.0 Vde) MMBT3903 50 150 MMBT3904 100 300 (ic = 50 mAdc, VcE = 1.0 Vdc) MMBT3903 30 - MMB8T3904 60 _- (i = 100 mAdc, Vee = 1.0 Vde) MMBT3903 15 _ MMB8T3904- 30 - Collactor-Emitter Saturation Valtage(1) VcEtsat} Vde {Ic = 10 mAde, Ip = 1.0 mAdc) - 0.2 (ic = 50 mAde, Ip = 5.0 mAdc) - 0.3 Base-Emitter Saturation Voltage(1} VBE(sat) Vde (ic = 10 mAde, Ig = 1.0 mAdc) 0.65 0.85 (lo = 50 mAdc, Ip = 5.0 mAdc) - 0.95 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr MHz {Ig = 10 mAdc, Voge = 20 Vde, f = 100 MHz) MMBT3903 250 - MMBT3904 300 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-104MOTOROLA SC {XSTRS/R FY 96 DE fpbsb?e54 O06eo4o O I 6367254 MOTOROLA SC CXSTRS/R F) 96D 82040sOD MMBT3903, MMBT3904 T* 29-5 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit Output Capacitance Cobo _ 4.0 pF (Veg = 5.0 Vde, Ip = 0, f = 1.0 MHz) input Capacitance Cibo od 8.0 pF (Vee = 0.5 Vde, Ic = 0, f = 1.0 MHz) Input Impedance hie k ohms {Ic = 1.0 mAdc, VcE = 10 Vde, f = 1.0 kHz) MMBT3903 1.0 8.0 MMBT3904 1.0 10 Voltage Feedback Ratio hre x 10-4 (Il = 1.0 mAde, Veg = 10 Vde, f = 1.0 kHz) MMBT3903 0.1 5.0 MMBT3904 0.5 8.0 Small-Signal Current Gain hte ~ (Ic = 1.0 mAde, Vce = 10 Vde, f = 1.0 kHz) MMBT3903 50 200 MMBT3904 100 400 Output Admittance hoe 1.0 40 zumhos (Ic = 1.0 mAde, VcE = 10 Vde, f = 1.0 kHz) Noise Figure NF dB (ic = 100 zAde, Vce = 5.0 Vdc, Rg = 1.0 ohms, MMBT3903 _ 6.0 f = 10 Hzto 15.7 kHz) MMBT3904 _ 5.0 SWITCHING CHARACTERISTICS Delay Time (Vcc = 3.0 Vdc, Vge = 0.5 Vdc, td - 35 ns Rise Time I = 10 mAde, Ipaq = 1.0 mAdc) tr 35 ns Storage Time (Voc = 3.0 Vdc, I = 10 mAde, MMBT23903 ts _ 175 ns Ip1 = Ip2 = 1.0 mAdc} MMBT3904 - 200 Fall Time tf - 50 ns (1) Pulse Test: Pulse Width < 300 us, Duty Cycle = 2.0%. 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