BDW93/A/B/C BDW93/A/B/C Hammer Drivers, Audio Amplifiers Applications * Power Darlington TR * Complement to BDW94, BDW94A, BDW94B and BDW94C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BDW93 : BDW93A : BDW93B : BDW93C 45 60 80 100 V V V V Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C 45 60 80 100 V V V V Collector-Base Voltage IC Collector Current (DC) 12 A ICP *Collector Current (Pulse) 15 A IB Base Current 0.2 A PC Collector Dissipation (TC=25C) 80 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Thermal Characteristics TC=25C unless otherwise noted Symbol Rjc Parameter Thermal Resistance (c)2000 Fairchild Semiconductor International Junction to Case Value 1.5 Units C/W Rev. A, February 2000 Symbol BVCEO(sus) ICBO ICEO Parameter * Collector-Emitter Sustaining Voltage : BDW93 : BDW93A : BDW93B : BDW93C Test Condition Min. IC = 100mA, IB = 0 45 60 80 100 Typ. Max. Units V V V V Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 100 100 100 100 A A A A : BDW93 : BDW93A : BDW93B : BDW93C VCE = 45V, IB = 0 VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCE = 100V, IB = 0 1 1 1 1 mA mA mA mA 2 mA Collector Cut-off Current IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE * DC Current Gain VCE = 3V, IC = 3A VCE = 3V, IC = 5A VCE = 3V, IC = 10A 1000 750 100 20000 VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 20mA IC = 10A, IB = 100mA 2 3 V V VBE(sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 20mA IC = 10A, IB = 100mA 2.5 4 V V VF * Parallel Diode Forward Voltage IF = 5A IF = 10A 2 4 V V 1.3 1.8 * Pulse Test: PW=300s, duty Cycle =1.5% Pulsed (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BDW93/A/B/C Electrical Characteristics TC=25C unless otherwise noted BDW93/A/B/C Typical characteristics 100k 10 IC= 250 IB VCE(sat) [V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = 3V 10k 1k 100 0.1 1 10 1 0.1 0.1 100 1 10 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage 1000 20 f=1MHz Cob [pF], OUTPUT CAPACTIANCE IC [A], COLLECTOR CURRENT VCE = 3 V 16 12 8 4 IE=0 100 10 0 0.0 0.8 1.6 2.4 3.2 1 4.0 10 VBE [V], BASE-EMITTER VOLTAGE VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Collector Output Capacitance 100 IC MAX. PD [W], POWER DISSIPATION 100 IC [A], COLLECTOR CURRENT 100 5 ms 1 ms 100 us 10 DC 1 BDW93 BDW93A BDW93B 80 60 40 20 BDW93C 0 0.1 1 10 100 VCE [V], COLLECTOR EMITTER VOLTAGE Figure 5. Safe Operating Area (c)2000 Fairchild Semiconductor International 1000 0 25 50 75 100 125 150 175 200 o TC [ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A, February 2000 BDW93/A/B/C Package Demensions TO-220 4.50 0.20 2.80 0.10 (3.00) +0.10 1.30 -0.05 18.95MAX. (3.70) o3.60 0.10 15.90 0.20 1.30 0.10 (8.70) (1.46) 9.20 0.20 (1.70) 9.90 0.20 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 10.08 0.30 (1.00) 13.08 0.20 ) (45 1.27 0.10 +0.10 0.50 -0.05 2.40 0.20 2.54TYP [2.54 0.20] 10.00 0.20 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2000 Fairchild Semiconductor International Rev. E