2002. 6. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA TIP112F
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: hFE=1000(Min.), VCE=4V, IC=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117F.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current DC IC2A
Pulse ICP 4
Base Current DC IB50 mA
Collector Power
Dissipation
Ta=25 PC2W
Tc=25 20
Junction Temperature Tj150
Storage Temperature Range Tstg -65 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEO VCE=50V, IB=0 - - 2 mA
ICBO VCB=100V, IE=0 - - 1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 mA
DC Current Gain hFE
VCE=4V, IC=1A 1000 - -
VCE=4V, IC=2A 500 - -
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.5 V
Base-Emitter On Voltage VBE(ON) VCE=4V, IC=2A - - 2.8 V
Collector Output Capacitance Cob VCB=10V, IE=0, f=0.1MHz - - 100 pF