VN0106N3-G-P003 - Microchip - Datasheet.Support

Supertex inc.

www.supertex.com

Doc.# DSFP-VN0106

C081913

VN0106

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiVN

0106

YYWW

Features

►Free from secondary breakdown

►Low power drive requirement

►Ease of paralleling

►Low CISS and fast switching speeds

►Excellent thermal stability

►Integral source-drain diode

►High input impedance and high gain

Applications

►Motor controls

►Converters

►Ampliers

►Switches

►Power supply circuits

►Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

General Description

This enhancement-mode (normally-off) transistor utilizes

a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities

of bipolar transistors and the high input impedance and

positive temperature coefcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

N-Channel Enhancement-Mode

Vertical DMOS FET

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BVDSS

Drain-to-gate voltage BVDGS

Gate-to-source voltage ±20V

Operating and storage temperature -55OC to +150OC

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

TO-92

Product Marking

Package may or may not include the following marks: Si or

Pin Conguration

TO-92

GATE

SOURCE

DRAIN

Product Summary

BVDSS/BVDGS

RDS(ON)

(max)

IDSS

(min)

60V 3.0Ω2.0A

Typical Thermal Resistance

Package θja

TO-92 132OC/W

Ordering Information

Part Number Package Option Packing

VN0106N3-G TO-92 1000/Bag

VN0106N3-G P002

TO-92 2000/Reel

VN0106N3-G P003

VN0106N3-G P005

VN0106N3-G P013

VN0106N3-G P014

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

2

Supertex inc.

www.supertex.com

Doc.# DSFP-VN0106

C081913

VN0106

Electrical Characteristics (TA = 25OC unless otherwise specied)

Sym Parameter Min Typ Max Units Conditions

Switching Waveforms and Test Circuit

90%

10%

90% 90%

10%

Pulse

Generator

VDD

R

L

OUTPUT

D.U.T.

t

(ON)

td(ON)

t(OFF)

td(OFF)

tr

INPUT

OUTPUT

10V

VDD

R

GEN

0V

t

f

BVDSS Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 1.0mA

VGS(th) Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID= 1.0mA

ΔVGS(th) Change in VGS(th) with temperature - -3.8 -5.5 mV/OC VGS = VDS, ID= 1.0mA

IGSS Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V

IDSS Zero gate voltage drain current

- - 1.0

µA

VGS = 0V, VDS = Max Rating

- - 100 VDS = 0.8 Max Rating,

VGS = 0V, TA = 125°C

ID(ON) On-state drain current 0.5 1.0 - AVGS = 5.0V, VDS = 25V

2.0 2.5 - VGS = 10V, VDS = 25V

RDS(ON) Static drain-to-source on-state resistance - 3.0 5.0 ΩVGS = 5.0V, ID = 250mA

- 2.5 3.0 VGS = 10V, ID = 1.0A

ΔRDS(ON) Change in RDS(ON) with temperature - 0.70 1.0 %/OC VGS = 10V, ID = 1.0A

GFS Forward transductance 300 450 - mmho VDS = 25V, ID = 500mA

CISS Input capacitance - 55 65

pF

VGS = 0V,

VDS = 25V,

f = 1.0MHz

COSS Common source output capacitance - 20 25

CRSS Reverse transfer capacitance - 5.0 8.0

td(ON) Turn-on delay time - 3.0 5.0

ns

VDD = 25V,

ID = 1.0A,

RGEN = 25Ω

trRise time - 5.0 8.0

td(OFF) Turn-off delay time - 6.0 9.0

tfFall time - 5.0 8.0

VSD Diode forward voltage drop - 1.2 1.8 V VGS = 0V, ISD = 1.0A

trr Reverse recovery time - 400 - ns VGS = 0V, ISD = 1.0A

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Notes:

† ID (continuous) is limited by max rated Tj .

Thermal Characteristics

Package ID

(continuous)†

ID

(pulsed)

Power Dissipation

@TC = 25OCIDR

†IDRM

TO-92 350mA 2.0A 1.0W 350mA 2.0A

3

Supertex inc.

www.supertex.com

Doc.# DSFP-VN0106

C081913

VN0106

Typical Performance Curves

Gate Drive Dynamic Characteristics

Q

G

(nanocoulombs)

V

GS

(volts)

10

8

6

4

2

0

0 0.2 0.4 0.6 0.8 1.0

V

DS

= 10V

40 pF

40V

80 pF

-50 0 50 100 150

1.1

1.0

0.9

BV

DSS

Variation with Temperature

B

VDSS

(normalized)

T

j

(

O

C)

On-Resistance vs. Drain Current

R

DS(ON)

(Ω)

I

D

(amperes)

0 0.5 1.0 1.5 2.0 2.5

5.0

4.0

3.0

2.0

1.0

0

V

GS

= 5.0V

V

GS

= 10V

Transfer Characteristics

V

GS

(volts)

I

D

(amperes)

0 2 4 6 8 10

2.5

2.0

1.5

1.0

0.5

0

T

A

= -55

O

C

25

O

C

V

DS

= 25V

125

O

C

V

GS(th)

(normalized)

R

DS(ON)

(normalized)

V

(th)

and R

DS

Variation with Temperature

1.6

1.4

1.2

1.0

0.8

0.6

-50 0 50 100 150

V

(th)

@ 1.0mA

R

DS

@ 10V, 1.0A

1.9

1.6

1.3

1.0

0.7

0.4

T

j

(

O

C)

R

DS

@ 5.0V, 0.25A

Capacitance vs. Drain-to-Source Voltage

100

75

50

25

0

C (picofarads)

0 10 20 30 40

f = 1.0MHz

C

ISS

C

OSS

C

RSS

V

DS

(volts)

4

Supertex inc.

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Doc.# DSFP-VN0106

C081913

VN0106

Typical Performance Curves (cont.)

Thermal Response Characteristics

Thermal Resistance (normalized)

t

P

(seconds)

1.0

0.8

0.6

0.4

0.2

0

TO-92

PD = 1.0W

TC = 25OC

0.001 0.01 0.1 1.0 10

Output Characteristics

V

DS

(volts)

I

D

(amperes)

0 10 20 30 40

2.5

2.0

1.5

1.0

0.5

0

VGS = 10V

8.0V

6.0V

4.0V

S

aturation

C

haracteristics

V

DS

(volts)

0 2.0 4.0 6.0 8.0 10

2.5

2.0

1.5

1.0

0.5

0

I

D

(amperes)

Transconductance vs. Drain Current

G

FS

(siemens)

I

D

(amperes)

1.0

0.8

0.6

0.4

0.2

0

0 0.2 0.4 0.6 0.8 1.0

VDS = 25V

TA = -55OC

25OC

125OC

Power Dissipation vs. Case Temperature

T

C

(

O

C)

P

D

(watts)

2.0

1.0

0

0 25 50 75 100 125 150

TO-92

Maximum Rated Safe Operating Area

V

DS

(volts)

I

D

(amperes)

0.1 1.0 10 100

10

1.0

0.1

0.01

TO-92 (DC)

TC = 25OC

3.0V

5.0V

7.0V

9.0V

VGS = 10V

8.0V

6.0V

4.0V

3.0V

5.0V

7.0V

9.0V

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

5

VN0106

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP-VN0106

C081913

3-Lead TO-92 Package Outline (N3)

Symbol A b c D E E1 e e1 L

Dimensions

(inches)

MIN .170 .014†.014†.175 .125 .080 .095 .045 .500

NOM - - - - - - - - -

MAX .210 .022†.022†.205 .165 .105 .105 .055 .610*

JEDEC Registration TO-92.

* This dimension is not specied in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

Seating

Plane

1

2

3

Front View Side View

Bottom View

E1 E

D

e1

L

e

c

1 2 3

b

A