ON Semiconductor General Purpose Transistor MMBT3906LT1 PNP Silicon ON Semiconductor Preferred Device 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -200 mAdc Collector Current -- Continuous 2 CASE 318-08, STYLE 6 SOT-23 (TO-236) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance Junction to Ambient RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1 BASE 2 EMITTER DEVICE MARKING MMBT3906LT1 = 2A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max -40 -- -40 -- -5.0 -- -- -50 -- -50 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) IBL Collector Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 3 1 Publication Order Number: MMBT3906LT1/D MMBT3906LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Min Max 60 80 100 60 30 -- -- 300 -- -- -- -- -0.25 -0.4 -0.65 -- -0.85 -0.95 250 -- -- 4.5 -- 10 2.0 12 0.1 10 100 400 3.0 60 -- 4.0 Unit ON CHARACTERISTICS(3) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) HFE Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) VBE(sat) -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hre Small-Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) hoe Noise Figure (IC = -100 Adc, VCE = -5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) NF MHz pF pF k X 10-4 -- mhos dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc) td -- 35 tr -- 35 (VCC = -3.0 3.0 Vdc, IC = -10 10 mAdc, IB1 = IB2 = -1.0 mAdc) ts -- 225 tf -- 75 ns ns 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3V 275 < 1 ns +0.5 V 10.6 V 3V < 1 ns +9.1 V 275 10 k 10 k 0 CS < 4 pF* 300 ns DUTY CYCLE = 2% 1N916 10 < t1 < 500 s DUTY CYCLE = 2% t1 CS < 4 pF* 10.9 V * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 2 MMBT3906LT1 TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25C TJ = 125C Cibo 3.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 1000 700 500 300 200 100 70 50 20 30 40 VCC = 40 V IC/IB = 10 QT QA 2.0 3.0 1.0 Figure 3. Capacitance tr @ VCC = 3.0 V 15 V 30 20 40 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC/IB = 20 100 70 50 30 20 IC/IB = 10 10 2.0 V 7 5 td @ VOB = 0 V 1.0 VCC = 40 V IB1 = IB2 300 200 t f , FALL TIME (ns) TIME (ns) 500 IC/IB = 10 300 200 10 7 5 200 Figure 4. Charge Data 500 100 70 50 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Fall Time 200 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 4.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 0 0.1 f = 1.0 kHz 10 SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 1.0 12 SOURCE RESISTANCE = 200 IC = 1.0 mA NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 IC = 0.5 mA 8 6 4 IC = 50 A 2 IC = 100 A 0 100 IC = 1.0 mA 0.1 Figure 7. 0.2 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 8. http://onsemi.com 3 40 100 MMBT3906LT1 h PARAMETERS (VCE = -10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 Figure 9. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 10. Output Admittance 20 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 5.0 7.0 10 0.1 0.2 Figure 11. Input Impedance 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) Figure 13. DC Current Gain http://onsemi.com 4 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3906LT1 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 TJ = 25C V, VOLTAGE (VOLTS) 0.8 V , TEMPERATURE COEFFICIENTS (mV/ C) Figure 14. Collector Saturation Region VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 0.5 VC FOR VCE(sat) 0 +25C TO +125C -55C TO +25C -0.5 +25C TO +125C -1.0 -55C TO +25C VB FOR VBE(sat) -1.5 -2.0 0 Figure 15. "ON" Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 16. Temperature Coefficients http://onsemi.com 5 180 200 MMBT3906LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 6 MMBT3906LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H K J STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 7 DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBT3906LT1 SENSEFET is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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