SFH 229
SFH 229 FA
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit
Silicon PIN Photodiod e with Very Short Sw itching Tim e
SFH 229 SFH 229 FA
2001-02-22 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 380 nm bis 1100 nm (SFH 229) und bei
880 nm (SFH 229 FA)
• Kurze Schaltzeit (typ. 10 ns)
• 3 mm-Plastikbauform im LED-Gehäuse
• Auch gegurtet lieferbar
Anwendungen
• Lichtschranken für Gleich- und Wechselbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
SFH 229 Q62702-P215
SFH 229 FA Q62702-P216
Features
• Especially suitable for applications from
380 nm to 1100 nm (SFH 229) and of 880 nm
(SFH 229 FA)
• Short switching time (typ. 10 ns)
• 3 mm LED plastic package
• Also available on tape and reel
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2001-02-22 2
SFH 229, SFH 229 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Löttemperatur (Lötstelle 2 mm vom Gehäu se entfernt
bei Lötzeit t ≤ 3 s)
Soldering temperature in 2 mm distance from case
bottom (t ≤ 3 s)
TS230 °C
Sperrspannung
Reverse voltage VR20 V
Verlustleistung
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 229 SFH 229 FA
Fotostrom
Photocurrent
VR = 5 V, Normlicht/standard light A,
T = 2856 K, EV = 1000 lx
VR = 5 V, λ = 950 nm, Ee = 1 mW/cm2
IP
IP
28 (≥ 18)
–
–
20 (≥ 10.8)
µA
µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 860 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ380 …1100 730 …1100 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A 0.3 0.3 mm2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L×B
L×W0.56 ×0.56 0.56 ×0.56 mm ×mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface H2.4 …2.8 2.4 …2.8 mm
Halbwinkel
Half angle ϕ±17 ±17 Grad
deg.
SFH 229, SFH 229 FA
2001-02-22 3
Dunkelstrom, VR = 10 V
Dark current IR 50 (≤ 5000) 50 (≤ 5000) pA
Spektrale Fotoempfindlichke it, λ = 850 nm
Spectral sensitivity Sλ0.62 0.60 A/W
Quantenausbeute, λ = 850 nm
Quantum yield η0.90 0.88 Electrons
Photon
Leerlaufspannung
Open-circuit voltage
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
VO
VO
450 (≥ 400)
–
–
420 (≥ 370)
mV
mV
Kurzschlußstrom
Short-cir cuit current
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
ISC
ISC
27
–
–
9
µA
µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 10 V; λ = 850 nm; Ip = 800 µA
tr, tf10 10 ns
Durchlaßspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C013 13 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 – 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Normlicht/standard light A
λ = 950 nm
TCI
0.18
––
0.2
%/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 850 nm
NEP 6.5 ×10– 15 6.5 ×10– 15
Nachweisgrenze, VR = 10 V, λ = 850 nm
Detection limit D* 8.4 ×1012 8.4 ×1012
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 229 SFH 229 FA
W
Hz
------------
cm Hz×
W
--------------------------
SFH 229, SFH 229 FA
2001-02-22 4
Relati ve Sp ectral Sensi ti vi ty
Srel = f (λ)
SFH 229
Photocurrent IP = f (Ee), VR = 5 V
Open-Circuit Voltage VO = f (Ee)
SFH 229 FA
Relative Spectral Sensitivity
Srel = f (λ)
SFH 229 FA
Total Power Dissipation
Ptot = f (TA)
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Vol t age VO = f (Ev)
SFH 229
Dark Current
IR = f (VR), E = 0
SFH 229, SFH 229 FA
2001-02-22 5
Capacitance
C = f (VR), f = 1 MH Z , E = 0
Directional Chara cter i sti cs
Srel = f (ϕ)
Dark Current
IR = f (TA), VR = 10 V, E = 0
2001-02-22 6
SFH 229, SFH 229 FA
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are spe cified as follows: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be cons idered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endange red.
0.6 (0.024)
0.4 (0.016)
4.0 (0.157)
3.6 (0.142)
ø3.1 (0.122)
ø2.9 (0.114)
4.1 (0.161)
3.9 (0.154)
5.2 (0.205)
4.5 (0.177)
3.5 (0.138)
6.3 (0.248)
5.9 (0.232)
1.8 (0.071)
1.2 (0.047)
29 (1.142)
27 (1.063)
2.54 (0.100)
spacing
0.7 (0.028)
0.4 (0.016)
Chip position
Collector (Transistor)
Area not flat
GEOY6653
0.4 (0.016)
0.8 (0.031)
Cathode (Diode)
