"PMEG6010ER,115" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an

integrated guard ring for stress protection, encapsulated in a SOD123W small and flat

lead Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

Average forward current: IF(AV) ≤1A

Reverse voltage: VR≤60 V

Low forward voltage

High power capability due to clip-bond technology

AEC-Q101 qualified

Small and flat lead SMD plastic package

1.3 Applications

Low voltage rectification

High efficiency DC-to-DC conve rs ion

Switch Mode Power Supply (SMPS)

Reverse polarity protection

Low power consumption applications

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

Rev. 01 — 9 March 2010 Product data sheet

Table 1. Quick reference data

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

IF(AV) avera ge forward current square wave;

δ= 0.5;

f = 20 kHz

Tamb ≤110 °C[1] --1A

Tsp ≤140 °C--1A

VRreverse voltage - - 60 V

VFforward voltage IF= 1 A - 460 530 mV

IRreverse current VR=60V - 30 60 μA

Product data sheet Rev. 01 — 9 March 2010 2 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

2. Pinning information

[1] The marking bar indicates the cathode.

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode [1]

2 anode 21

sym00

Table 3. Ordering i nformation

Type number Package

Name Description Version

PMEG6010ER - plastic surface-mounted package; 2 leads SOD123W

Table 4. Marking codes

Type number Marking code

PMEG6010ER BB

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRreverse voltage Tj=25°C-60V

IF(AV) average forward current square wave;

δ= 0.5;

f=20kHz

Tamb ≤110 °C[1] -1A

Tsp ≤140 °C-1A

IFSM non-repetitive peak

forward current square wave;

tp=8ms [2] -50A

Ptot total power dissipation Tamb ≤25 °C[3][4] -0.57W

[3][5] -0.95W

[1][3] -1.8W

Product data sheet Rev. 01 — 9 March 2010 3 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[2] Tj=25°C prior to surge.

[3] Reflow soldering is the only recommended soldering method.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

6. Thermal characteristics

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[6] Soldering point of cathode tab.

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1][2]

[3] - - 220 K/W

[4] - - 130 K/W

[5] --70K/W

Rth(j-sp) thermal resistance from

junction to solder point [6] --18K/W

Product data sheet Rev. 01 — 9 March 2010 4 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

FR4 PCB, standard footprint

Fig 1. Transient thermal impe da nce from junction to ambient as a function of pulse duratio n; typica l values

FR4 PCB, mounting pad for cathode 1 cm2

Fig 2. Transient thermal impe da nce from junction to ambient as a function of pulse duratio n; typica l values

006aab362

102

103

Zth(j-a)

(K/W)

10−1

tp (s)

10−3102103

10110−210−1

duty cycle =

0.75

0.5

0.33

0.25 0.2

0.1

0.05

0.02 0.01

006aab363

102

103

Zth(j-a)

(K/W)

10−1

tp (s)

10−3102103

10110−210−1

duty cycle =

10.75

0.5 0.33

0.25 0.2

0.1

0.05

0.02 0.01

Product data sheet Rev. 01 — 9 March 2010 5 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

7. Characteristics

Ceramic PCB, Al2O3, standard footprint

Fig 3. Transient thermal impe da nce from junction to ambient as a function of pulse duratio n; typica l values

006aab364

102

103

Zth(j-a)

(K/W)

10−1

tp (s)

10−3102103

10110−210−1

duty cycle =

0.75

0.5 0.33

0.25 0.2

0.1 0.05

0.02 0.01

Table 7. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VFforward voltage IF= 0.1 A - 320 370 mV

IF= 0.7 A - 430 490 mV

IF= 1 A - 460 530 mV

IRreverse current VR=5V - 1.2 - μA

VR=10V - 1.7 - μA

VR=60V - 30 60 μA

Cddiode capacitance f = 1 MHz

VR= 1 V - 120 - pF

VR=10V - 40 - pF

Product data sheet Rev. 01 — 9 March 2010 6 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

(1) Tj= 150 °C

(2) Tj= 125 °C

(3) Tj=85°C

(4) Tj=25°C

(5) Tj=−40 °C

(1) Tj= 125 °C

(2) Tj=85°C

(3) Tj=25°C

(4) Tj=−40 °C

Fig 4. Forward current as a function of forward

voltage; typical values Fig 5. Reverse current as a function of reverse

voltage; typical values

f=1MHz; T

amb =25°C

Fig 6. Diode capacitance as a function of reverse voltage; typical values

006aab890

10−2

10−3

10−1

(A)

10−4

VF (V)

0.0 0.80.60.2 0.4

(1)

(2)

(3) (4) (5)

006aab891

VR (V)

0604020

10−2

10−3

10−4

10−5

10−6

10−7

10−8

(A)

10−9

(4)

(1)

(2)

(3)

006aab892

VR (V)

0604020

100

150

200

250

(pF)

Product data sheet Rev. 01 — 9 March 2010 7 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

Tj= 150 °C

(1) δ=0.1

(2) δ=0.2

(3) δ=0.5

(4) δ=1

Tj= 125 °C

(1) δ=1

(2) δ=0.9

(3) δ=0.8

(4) δ=0.5

Fig 7. Average forwar d po wer dissipation as a

function of average forward cur rent; typical

values

Fig 8. Average reverse power dissipation as a

function of reverse voltage; typica l va lues

FR4 PCB, standard footprint

Tj= 150 °C

(1) δ=1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

FR4 PCB, mounting pad for cathode 1 cm2

Tj= 150 °C

(1) δ=1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

Fig 9. Average forward current as a function of

ambient temperature ; typi cal values Fig 10. Average forward current as a function of

ambient temperature; typical values

IF(AV) (A)

0.0 1.51.00.5

006aab893

0.7

PF(AV)

(W)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

(1)

(2)

(3)

(4)

006aab894

VR (V)

0604020

0.4

0.2

0.6

0.8

PR(AV)

(W)

0.0

(1)

(2)

(3)

(4)

Tamb (°C)

17512525 15010050075

006aab895

0.8

0.4

1.2

1.6

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tamb (°C)

17512525 15010050075

006aab896

0.8

0.4

1.2

1.6

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Product data sheet Rev. 01 — 9 March 2010 8 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

Ceramic PCB, Al2O3, standard footprint

Tj= 150 °C

(1) δ=1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

Tj= 150 °C

(1) δ=1; DC

(2) δ= 0.5; f = 20 kHz

(3) δ= 0.2; f = 20 kHz

(4) δ= 0.1; f = 20 kHz

Fig 11. Average forward current as a function of

ambient temperature ; typi cal values Fig 12. Average forward current as a function of

solder point temperature; typical values

Tamb (°C)

17512525 15010050075

006aab897

0.8

0.4

1.2

1.6

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Tsp (°C)

17512525 15010050075

006aab898

0.8

0.4

1.2

1.6

IF(AV)

(A)

0.0

(1)

(2)

(3)

(4)

Product data sheet Rev. 01 — 9 March 2010 9 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

8. Test information

The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are

calculated according to the equations: with IM defined as peak current,

at DC, and with IRMS defined as RMS current.

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

9. Package outline

Fig 13. Duty cycle definition

006aaa812

duty cycle δ =

IFAV() IMδ×=

IRMS IFAV()

=IRMS IMδ×=

Fig 14. Package outline SOD123W

08-11-06Dimensions in mm

2.8

2.4

3.7

3.3

1.05

0.75

1.9

1.5

0.6

0.3

0.22

0.10

1.1

0.9

Product data sheet Rev. 01 — 9 March 2010 10 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000

PMEG6010ER SOD123W 4 mm pitch, 12 mm tape and reel -115

Reflow soldering is the only recommended soldering method.

Fig 15. Reflow soldering footprint SOD123W

2.9

2.8

4.4

1.62.1 1.2

(2×)

1.1

(2×)

solder lands

solder resist

occupied area

solder paste

1.1

(2×)

1.2

(2×)sod123w_

Dimensions in mm

Product data sheet Rev. 01 — 9 March 2010 11 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMEG6010ER_1 20100309 Product data sheet - -

Product data sheet Rev. 01 — 9 March 2010 12 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the shor t data sheet, the

full data sheet shall pre va il.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agreed be tween

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whethe r or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulat ive liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. The product is not designed, authorize d or warranted to be

suitable for use in medica l, military, aircraft, space or life support equipment,

nor in applications where failure or malf unction of an NXP Semiconductors

product can reasonably be expected to result in personal injury, death or

severe property or environmental dam age. NXP Semiconductors accepts no

liability for inclusion and/or use of NXP Semiconductors products in such

equipment or applications and therefore such inclusion and/or use is at the

customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application /use or t he application/use of customer’s third party

customer(s) (hereinafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the NXP Semiconductors product is

suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and t he

product. NXP Semiconductors does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Char acteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 01 — 9 March 2010 13 of 14

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

13.4 Trademarks

Notice: All referenced brand s, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PMEG6010ER

1 A low VF MEGA Schottky barrier rectifier

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 9 March 2010

Document identifier: PMEG6010ER_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14