BAT54WS-G
www.vishay.com Vishay Semiconductors
Rev. 1.3, 02-Jun-17 1Document Number: 85241
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
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MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
Note
(1) Valid provided that electrodes are kept at ambient temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature
Note
(1) Pulse test; tp < 300 μs, θ < 2 %
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAT54WS-G BAT54WS-G3-08 or BAT54WS-G3-18 Single L8 Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 30 V
Forward continuous current (1) IF200 mA
Repetitive peak forward current (1) IFRM 300 mA
Surge forward current (1) tp < 1 s IFSM 600 mA
Power dissipation (1) Ptot 150 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 650 K/W
Maximum junction temperature Tj125 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +125 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage Tested with 100 μA pulses V(BR) 30 V
Leakage current (1) VR = 25 V IR2μA
Forward voltage (1)
IF = 0.1 mA VF240 mV
IF = 1 mA VF320 mV
IF = 10 mA VF400 mV
IF = 30 mA VF500 mV
IF = 100 mA VF800 mV
Diode capacitance VR = 1 V, f = 1 MHz CD10 pF
Reserve recovery time IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ωtrr 5ns