May 2009
1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM200DG-130S
HIGH POWER SWITCHING USE
INSULATED TYPE
●IF ...................................................................200A
●VRRM ...................................................... 6500V
●High Insulated Type
●2-element in a Pack
●AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
RM200DG-130S
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
High Voltage Diode Module
High Voltage Diode Module
(K) (K)
2
4
(A) (A)
1
3
CIRCUIT DIAGRAM
42
31
6-φ7 MOUNTING HOLES
Screwing depth
min. 16.5
4-M8 NUTS
+1.0
0
48
130
±0.5
57
±0.25
57
±0.25
17
±0.1
44
±0.3
22
±0.3
124
±0.25
140
±0.5
16.5
±0.3
5
±0.15
40.4
±0.5
61.2
±0.5
34.4
±0.5
>PET+PBT<
May 2009
2
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM200DG-130S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
High Voltage Diode Module
High Voltage Diode Module
Min Typ Max
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
Note 1. It doesn't include the voltage drop by internal lead resistance.
2. Erec is the integral of 0.1VR
x
0.1Irr
x
dt.
VRM = VRRM
IF = 200 A
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Repetitive reverse current
Forward voltage (Note 1)
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy (Note 2)
3
30
—
—
—
—
—
—
mA
V
µs
A
µC
J/P
—
3
4.00
3.60
1.0
420
300
0.7
—
—
—
—
—
—
—
—
IRRM
VFM
trr
Irr
Qrr
Erec
VR = 3600 V, IF = 200 A
di/dt = –670 A/µs
Ls=100nH, Tj = 125 °C
Repetitive peak reverse
voltage
Non-repetitive peak reverse
voltage
Reverse DC voltage
DC forward current
Surge forward current
Current-squared, time
integration
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Tj = –40 °C
Tj = +25 °C
Tj = +125 °C
Tj = –40 °C
Tj = +25 °C
Tj = +125 °C
Tj = 25 °C
TC = 25 °C
Tj = 25 °C start, tw = 8.3 ms
Half sign wave
Tj = 25 °C start, tw = 8.3 ms
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
RMS sinusoidal, 60Hz, QPD ≤ 10PC
—
—
—
5800
6300
6500
5800
6300
6500
4500
200
1600
11
10200
5100
–40 ~ +150
–40 ~ +125
–40 ~ +125
V
V
V
A
A
kA2s
V
V
°C
°C
°C
VRRM
VRSM
VR(DC)
IF
IFSM
I2t
Viso
Ve
Tj
Top
Tstg
May 2009
3
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM200DG-130S
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Module
High Voltage Diode Module
Min Typ Max
THERMAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
Min Typ Max
MECHANICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
Rth(j-c)
Rth(c-f)
Junction to case
(per 1/2 module)
Case to Fin, λgrease = 1W/m·K
D(c-f)=100µm, (per 1/2 module)
K/kW
K/kW
Thermal resistance
Contact thermal resistance
66.0
—
—
48.0
—
—
Mt
Ms
m
CTI
Da
Ds
LP CE
RCC’+EE’
M8: Main terminals screw
M6: Mounting screw
—
—
—
—
—
Tc = 25 °C
N·m
N·m
kg
—
mm
mm
nH
mΩ
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Internal inductance
Internal lead resistance
15.0
6.0
—
—
—
—
—
—
—
—
1.0
—
—
—
44
0.27
7.0
3.0
—
600
26
56
—
—
PERFORMANCE CURVES
FORWARD VOLTAGE V
F
(V) FORWARD CURRENT I
F
(A)
REVERSE RECOVERY ENERGY
CHARACTERISTICS
(TYPICAL)
FORWARD CHARACTERISTICS
(TYPICAL)
T
j
= 25°C
T
j
= 125°C
0
400
300
200
100
0
1.2
1.0
0.8
0.6
0.4
0.2
012345678 0 100 200 300 400 500
FORWARD CURRENT I
F
(A)
REVERSE RECOVERY ENERGY E
rec
(J/p)
V
R
= 3600V, di/dt = 670A/µs
T
j
= 125°C, L
S
= 100nH
May 2009
4
FORWARD CURRENT IF (A) REVERSE VOLTAGE VR (V)
REVERSE RECOVERY
SAFE OPERATING AREA
(RRSOA)
REVERSE RECOVERY
CHARACTERISTICS
(TYPICAL)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
0
0.2
0.4
0.6
0.8
1.0
1.2
02000 4000 6000 8000
0
100
200
300
400
500
TIME (s)
103
104
102
101
101
102
100
10-1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
-2
10
-3
23 57
10
-1
23 57
10
0
23 57
10
1
23 57
REVERSE RECOVERY TIME trr (µs)
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY CURRENT Irr (A)
102
101
23 57
103
23 5447
VR ≤ 4500V, di/dt ≤ 1000A/µs
Tj = 125°C
VR = 3600V, di/dt = 670A/µs
Tj = 125°C, LS = 100nH
Irr
trr
Rth(j–c) = 66K/kW
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM200DG-130S
HIGH POWER SWITCHING USE
INSULATED TYPE
High Voltage Diode Module
High Voltage Diode Module
ZR
th( j –c ) (
t
)=Σ
n
i=1
i1–exp t
i
–
t
R
i
[K/kW]
τ
i
[sec]
1
0.0059
0.0002
2
0.0978
0.0074
3
0.6571
0.0732
4
0.2392
0.4488
