DATA SH EET
Product specification
Supersedes data of 1997 Mar 27 1999 Apr 23
DISCRETE SEMICONDUCTORS
BC846W; BC847W
NPN general purpose transistors
b
ook, halfpage
M3D102
1999 Apr 23 2
Philips Semiconductors Product specification
NPN general purpose transistors BC846W; BC847W
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SC70; SOT323 plastic package.
PNP complements: BC856W and BC857W.
MARKING
Note
1. = - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1)
BC846W 1DBC847AW 1E
BC846AW 1ABC847BW 1F
BC846BW 1BBC847CW 1G
BC847W 1H
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
Fig.1 Simplified outline (SC70; SOT323)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC846W 80 V
BC847W 50 V
VCEO collector-emitter voltage open base
BC846W 65 V
BC847W 45 V
VEBO emitter-base voltage open collector 5V
I
Ccollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 200 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 23 3
Philips Semiconductors Product specification
NPN general purpose transistors BC846W; BC847W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp300 µs; δ≤0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =30V −−15 nA
IE= 0; VCB =30V; T
j= 150 °C−−5µA
I
EBO emitter cut-off current IC= 0; VEB =5V −−100 nA
hFE DC current gain IC= 2 mA; VCE =5V;
see Figs 2, 3 and 4
BC846W 110 450
BC847W 110 800
BC846AW; BC847AW 110 220
BC846BW; BC847BW 200 450
BC847CW 420 800
VCEsat collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−250 mV
IC= 100 mA; IB= 5 mA; note 1 −−600 mV
VBEsat base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA 700 mV
IC= 100 mA; IB=5mA 900 mV
VBE base-emitter voltage IC= 2 mA; VCE = 5 V 580 700 mV
IC= 10 mA; VCE =5V −−770 mV
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz −−3pF
f
Ttransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz
F noise figure IC= 200 µA; VCE =5V; R
S=2k;
f = 1 kHz; B = 200 Hz −−10 dB
1999 Apr 23 4
Philips Semiconductors Product specification
NPN general purpose transistors BC846W; BC847W
Fig.2 DC current gain; typical values.
BC846AW; BC847AW.
handbook, full pagewidth
0
250
50
100
150
200
MBH723
102101
hFE
1IC (mA)
10 103
102
VCE = 5 V
Fig.3 DC current gain; typical values.
BC846BW; BC847BW.
handbook, full pagewidth
0
300
100
200
MBH724
102101
hFE
1IC (mA)
10 103
102
VCE = 5 V
1999 Apr 23 5
Philips Semiconductors Product specification
NPN general purpose transistors BC846W; BC847W
Fig.4 DC current gain; typical values.
BC847CW.
handbook, full pagewidth
0
600
200
400
MBH725
102101
hFE
1IC (mA)
10 103
102
VCE = 5 V
1999 Apr 23 6
Philips Semiconductors Product specification
NPN general purpose transistors BC846W; BC847W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee
1
H
E
L
pQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
1999 Apr 23 7
Philips Semiconductors Product specification
NPN general purpose transistors BC846W; BC847W
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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© Philips Electronics N.V. 1999 SCA63
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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr 23 Document order number: 9397 750 05807