1
Rectifier Device Data
 
 
  
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal–to–silicon power
rectifier. Features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency switching power
supplies; free wheeling diodes and polarity protection diodes.
Compact Package with J–Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over–Voltage Protection
Low Forward Voltage Drop
Mechanical Characteristics:
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8
Weight: 95 mg (approximately)
Polarity: Notch in Plastic Body Indicates Cathode Lead
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Available in 12 mm Tape, 2500 Units per 13 Reel, Add “T3” Suffix to Part Number
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Marking: B14L
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40 Volts
Average Rectified Forward Current (At Rated VR, TC = 110°C) IO1.0 Amps
Peak Repetitive Forward Current
(At Rated VR, Square W ave, 100 kHz, TC = 110°C) IFRM 2.0 Amps
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 40 Amps
Storage / Operating Case Temperature Tstg, TC 55 to +150 °C
Operating Junction Temperature TJ 55 to +125 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/
m
s
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Lead (2)
Thermal Resistance — Junction–to–Ambient (2) RθJL
RθJA 24
80 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Volta
g
e (1) VFTJ = 25°C TJ = 125°CVolts
Maximum
Instantaneous
Forward
Voltage
(1)
(IF = 1.0 A)
see Figure 2 (IF = 2.0 A) 0.5
0.6 0.425
0.58
Maximum Instantaneous Reverse Current IRTJ = 25°C TJ = 100°CmA
Maximum
Instantaneous
Reverse
Current
(VR = 40 V)
see Figure 4 (VR = 20 V) 0.4
0.02 10
5.0
This document contains information on a new product. Specifications and information herein are subject to change without notice.
(1) Pulse Test: Pulse Width 250 µs, Duty Cycle 2.0%.
(2) Mounted with minimum recommended pad size, PC Board FR4.
Motorola, Inc. 1997
Order this document
by MBRS140LT3/D

SEMICONDUCTOR TECHNICAL DATA

SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
CASE 403A–03
SMB
MBRS140LT3
2Rectifier Device Data
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
Figure 5. Current Derating Figure 6. Forward Power Dissipation
0.70.1
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
400
VR, REVERSE VOLTAGE (VOLTS)
100E–3
10E–3
1.0E–3
100E–6
10E–6
1.0E–6
45 8525
TL, LEAD TEMPERATURE (
°
C)
1.6
0.8
0.4
0
IO, A VERAGE FORWARD CURRENT (AMPS)
0.2 0.80
0.9
0.8
0.6
0.5
0.2
0
65
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)I
0.1 0.3 0.5 0.9
10 20 30
, A VERAGE FORWARD CURRENT (AMPS)IO
125105 0.4 1.60.6
0.3
PFO, AVERAGE POWER DISSIPA TION (WATTS)
100
TJ = 125
°
C
100
°
C25
°
C
–40
°
C
0.70.1
VF, MAXIMUM INSTANTANEOUS FORWARD VOLT AGE (VOLTS)
10
1.0
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
0.1 0.3 0.5 0.9
100
TJ = 125
°
C
100
°
C
25
°
C
, REVERSE CURRENT (AMPS)
R
400
VR, REVERSE VOLTAGE (VOLTS)
100E–3
10E–3
1.0E–3
100E–6
10E–6
1.0E–6
I
10 20 30
, MAXIMUM REVERSE CURRENT (AMPS)
R
1.2
FREQ = 20 kHz
TJ = 125
°
C
100
°
C
25
°
C
TJ = 125
°
C
100
°
C
25
°
C
dc
SQUARE W AVE
Ipk/Io =
p
Ipk/Io = 5.0
Ipk/Io = 10
Ipk/Io = 20
dc
SQUARE W AVE
Ipk/Io =
p
Ipk/Io = 5.0
Ipk/Io = 10
Ipk/Io = 20
1.4
0.6
0.2
1.0
1.41.0 1.2
0.1
0.4
0.7
MBRS140LT3
3
Rectifier Device Data
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
Figure 9. Thermal Response — Junction to Lead
Figure 10. Thermal Response — Junction to Ambient
300
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
25 400
105
85
75
65
C, CAPACITANCE (pF)
T
155.0 10 20 25 35 40 30 355.0 10 2015
95
115
125
, DERATED OPERATING TEMPERATURE ( C)
J
°
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = TJmax – r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 94
°
C/W
44
°
C/W 63
°
C/W 80
°
C/W
24
°
C/W
TJ = 25
°
C
0.10.00001
t, TIME (s)
1.0E+00
1.0E–01
1.0E–02
1.0E–03
1.0E–04
R
0.0001 0.001 0.01
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
T
1.0 10 100 1000
50%
20%
10%
5.0%
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
0.10.00001
t, TIME (s)
1.0E+00
1.0E–01
1.0E–02
1.0E–03
1.0E–04 0.0001 0.001 0.01 1.0 10 100 1000
50%
20%
10%
5.0%
2.0%
1.0%
Rtjl(t) = Rtjl*r(t)
R , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
T
MBRS140LT3
4Rectifier Device Data
0.108
2.743
mm
inches
0.089
2.261
0.085
2.159
SMB
PACKAGE DIMENSIONS
CASE 403A–03
ISSUE B
A
S
DB
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.160 0.180 4.06 4.57
B0.130 0.150 3.30 3.81
C0.075 0.095 1.90 2.41
D0.077 0.083 1.96 2.11
H0.0020 0.0060 0.051 0.152
J0.006 0.012 0.15 0.30
K0.030 0.050 0.76 1.27
P0.020 REF 0.51 REF
S0.205 0.220 5.21 5.59
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MBRS140LT3/D