© Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 9
1Publication Order Number:
2N7002K/D
2N7002K
Small Signal MOSFET
60 V, 380 mA, Single, NChannel, SOT23
Features
ESD Protected
Low RDS(on)
Surface Mount Package
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Low Side Load Switch
Level Shift Circuits
DCDC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating Symbol Value Unit
DraintoSource Voltage VDSS 60 V
GatetoSource Voltage VGS ±20 V
Drain Current (Note 1)
Steady State 1 sq in Pad TA = 25°C
TA = 85°C
ID380
270
mA
Drain Current (Note 2)
Steady State Minimum Pad TA = 25°C
TA = 85°C
ID320
230
mA
Power Dissipation
Steady State 1 sq in Pad
Steady State Minimum Pad
PD420
300
mW
Pulsed Drain Current (tp = 10 ms) IDM 1.5 A
Operating Junction and Storage
Temperature Range
TJ, TSTG 55 to
+150
°C
Source Current (Body Diode) IS300 mA
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL260 °C
GateSource ESD Rating
(HBM, Method 3015)
ESD 2000 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
JunctiontoAmbient Steady State (Note 1) RqJA 300 °C/W
JunctiontoAmbient t 5 s (Note 1) 92
JunctiontoAmbient Steady State (Note 2) 417
JunctiontoAmbient t 5 s (Note 2) 154
1. Surfacemounted on FR4 board using 1 sq in pad size with 1 oz Cu.
2. Surfacemounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.
Device Package Shipping
ORDERING INFORMATION
2N7002KT1G 3000/Tape & Reel
SIMPLIFIED SCHEMATIC
SOT23
CASE 318
STYLE 21
704 MG
G
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
Gate
2
1
3
Source
http://onsemi.com
SOT23
(PbFree)
60 V 1.6 W @ 10 V
RDS(on) MAX
380 mA
ID MAXV(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2.5 W @ 4.5 V
Gate
Source
Drain
3
2
1
(Top View)
704 = Specific Device Code*
M = Date Code*
G= PbFree Package
2N7002KT1H 3000/Tape & ReelSOT23
(PbFree)
*Specific Device Code, Date Code or overbar
orientation and/or location may vary depend-
ing upon manufacturing location. This is a
representation only and actual devices may
not match this drawing exactly.
(Note: Microdot may be in either location)
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ71 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 60 V
TJ = 25°C 1 mA
TJ = 125°C 500
VGS = 0 V,
VDS = 50 V
TJ = 25°C 100 nA
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 mA
VDS = 0 V, VGS = ±10 V 450 nA
VDS = 0 V, VGS = ±5.0 V 150 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 2.3 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ4.0 mV/°C
DraintoSource On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6 W
VGS = 4.5 V, ID = 200 mA 1.33 2.5
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz,
VDS = 20 V
24.5 pF
Output Capacitance COSS 4.2
Reverse Transfer Capacitance CRSS 2.2
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
0.7 nC
Threshold Gate Charge QG(TH) 0.1
GatetoSource Charge QGS 0.3
GatetoDrain Charge QGD 0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 4)
TurnOn Delay Time td(ON)
VGS = 10 V, VDD = 25 V,
ID = 500 mA, RG = 25 W
12.2 ns
Rise Time tr9.0
TurnOff Delay Time td(OFF) 55.8
Fall Time tf29
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 200 mA
TJ = 25°C 0.8 1.2 V
TJ = 85°C 0.7
3. Pulse Test: pulse width 300 ms, duty cycle 2%
4. Switching characteristics are independent of operating junction temperatures
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3
TYPICAL CHARACTERISTICS
5.0 V
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
VDS, DRAINTOSOURCE VOLTAGE (V) VGS, GATETOSOURCE VOLTAGE (V)
6420
0
0.4
0.8
1.2
1.6
6420
0
0.4
0.8
1.2
Figure 3. OnResistance vs. Drain Current and
Temperature
Figure 4. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.4
0.8
1.2
1.6
2.0
3.2
Figure 5. OnResistance vs. GatetoSource
Voltage
Figure 6. OnResistance Variation with
Temperature
VGS, GATETOSOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
108642
0.4
0.8
1.6
2.4
12510075502502550
0.6
1.0
1.4
1.8
2.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAINTOSOURCE RESISTANCE (W)RDS(on), DRAINTOSOURCE RESISTANCE (W)
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
VGS = 10 V
7.0 V
8.0 V
9.0 V 4.5 V
4.0 V
6.0 V
3.5 V
3.0 V
2.5 V
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 4.5 V
ID, DRAIN CURRENT (A)
1.21.00.80.60.40.20
0
0.8
1.6
2.4
3.2
RDS(on), DRAINTOSOURCE RESISTANCE (W)
TJ = 55°C
TJ = 125°C
TJ = 25°C
TJ = 85°C
VGS = 10 V
ID = 500 mA
ID = 200 mA
150
ID = 0.2 A
VGS = 4.5 V
VGS = 10 V
1.2
2.0
2.4
2.8
0.4
1.2
2.0
2.8
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
0.80.60.40.20
0
1
2
3
4
5
Figure 9. Diode Forward Voltage vs. Current
VSD, SOURCETODRAIN VOLTAGE (V)
1.21.00.80.60.4
0.01
1
10
VGS, GATETOSOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
TJ = 25°C
ID = 0.2 A
201612840
0
10
20
30
C, CAPACITANCE (pF)
Ciss
Coss
Crss
TJ = 25°C
VGS = 0 V
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
TJ = 25°CTJ = 85°C
VGS = 0 V
0.1
Figure 10. Threshold Voltage with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
12510075502502550
0.5
0.7
0.9
1.1
1.3
VGS(TH), THRESHOLD VOLTAGE (V)
150
ID = 250 mA
0.6
0.8
1.0
1.2
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TYPICAL CHARACTERISTICS
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1000
Figure 11. Thermal Response 1 sq in pad
t, PULSE TIME (s)
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.02
0.2
0.01
0.05
Duty Cycle = 0.5
SINGLE PULSE
0.1
1 10 100
1000
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1000
Figure 12. Thermal Response minimum pad
t, PULSE TIME (s)
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.02
0.2
0.01
0.05
Duty Cycle = 0.5
SINGLE PULSE
0.1
1 10 100
1000
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6
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2N7002K/D
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