2N7002K Small Signal MOSFET 60 V, 380 mA, Single, N-Channel, SOT-23 Features * * * * ESD Protected Low RDS(on) Surface Mount Package These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com Low Side Load Switch Level Shift Circuits DC-DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. ID MAX 1.6 W @ 10 V 60 V Applications * * * * RDS(on) MAX V(BR)DSS 380 mA 2.5 W @ 4.5 V SIMPLIFIED SCHEMATIC Gate 1 MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGS 20 Drain Current (Note 1) Steady State 1 sq in Pad Drain Current (Note 2) Steady State Minimum Pad TA = 25C TA = 85C TA = 25C TA = 85C ID ID V 380 270 mA 320 230 3 Pulsed Drain Current (tp = 10 ms) IDM 1.5 A Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 C mW 420 300 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 2 Source Current (Body Diode) IS 300 mA Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C ESD 2000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SOT-23 CASE 318 STYLE 21 704 MG G 1 2 Source Gate 704 = Specific Device Code* M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Specific Device Code, Date Code or overbar orientation and/or location may vary depending upon manufacturing location. This is a representation only and actual devices may not match this drawing exactly. ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Junction-to-Ambient - Steady State (Note 1) RqJA 300 C/W Junction-to-Ambient - t 5 s (Note 1) 92 Junction-to-Ambient - Steady State (Note 2) 417 Junction-to-Ambient - t 5 s (Note 2) 154 1. Surface-mounted on FR4 board using 1 sq in pad size with 1 oz Cu. 2. Surface-mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu. February, 2012 - Rev. 9 2 Source (Top View) PD (c) Semiconductor Components Industries, LLC, 2012 Drain mA Power Dissipation Steady State 1 sq in Pad Steady State Minimum Pad Gate-Source ESD Rating (HBM, Method 3015) 3 1 Package Shipping 2N7002KT1G SOT-23 (Pb-Free) 3000/Tape & Reel 2N7002KT1H SOT-23 (Pb-Free) 3000/Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2N7002K/D 2N7002K ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS 71 IGSS mV/C TJ = 25C 1 TJ = 125C 500 TJ = 25C 100 nA VDS = 0 V, VGS = 20 V 10 mA VDS = 0 V, VGS = 10 V 450 nA VDS = 0 V, VGS = 5.0 V 150 nA 2.3 V VGS = 0 V, VDS = 60 V VGS = 0 V, VDS = 50 V Gate-to-Source Leakage Current V mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS VGS = VDS, ID = 250 mA 1.0 4.0 mV/C VGS = 10 V, ID = 500 mA 1.19 1.6 VGS = 4.5 V, ID = 200 mA 1.33 2.5 VDS = 5 V, ID = 200 mA 530 mS 24.5 pF W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 0 V, f = 1 MHz, VDS = 20 V 4.2 2.2 nC 0.7 VGS = 4.5 V, VDS = 10 V; ID = 200 mA 0.1 0.3 0.1 SWITCHING CHARACTERISTICS, VGS = V (Note 4) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time tr td(OFF) Fall Time ns 12.2 VGS = 10 V, VDD = 25 V, ID = 500 mA, RG = 25 W tf 9.0 55.8 29 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA 3. Pulse Test: pulse width 300 ms, duty cycle 2% 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 TJ = 25C 0.8 TJ = 85C 0.7 1.2 V 2N7002K TYPICAL CHARACTERISTICS 9.0 V 8.0 V 7.0 V 6.0 V 1.2 1.2 5.0 V 4.5 V VGS = 10 V 4.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 3.5 V 0.8 3.0 V 0.4 0.8 TJ = 25C 0.4 2.5 V 0 2 4 0 6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) TJ = 125C TJ = 85C TJ = 25C 2.0 1.6 TJ = -55C 1.2 0.8 0.4 0.2 0.4 0.6 0.8 1.0 1.2 6 3.2 VGS = 10 V 2.8 2.4 TJ = 125C 2.0 TJ = 85C 1.6 TJ = 25C 1.2 TJ = -55C 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Drain Current and Temperature Figure 4. On-Resistance vs. Drain Current and Temperature 2.4 2.2 2.0 ID = 500 mA 1.6 ID = 200 mA 1.2 0.8 0.4 4 Figure 2. Transfer Characteristics VGS = 4.5 V 0 2 Figure 1. On-Region Characteristics 2.4 0 0 TJ = -55C VGS, GATE-TO-SOURCE VOLTAGE (V) 3.2 2.8 TJ = 125C VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 2 4 6 8 ID = 0.2 A 1.8 VGS = 10 V 1.4 1.0 0.6 -50 10 VGS = 4.5 V -25 0 25 50 75 100 125 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance vs. Gate-to-Source Voltage Figure 6. On-Resistance Variation with Temperature http://onsemi.com 3 150 2N7002K TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 30 C, CAPACITANCE (pF) Ciss 20 TJ = 25C VGS = 0 V Coss 10 0 Crss 0 4 8 12 16 20 TJ = 25C ID = 0.2 A 4 3 2 1 0 0 0.2 0.4 0.6 0.8 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1.3 VGS(TH), THRESHOLD VOLTAGE (V) 10 VGS = 0 V IS, SOURCE CURRENT (A) 5 1 TJ = 85C TJ = 25C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.2 ID = 250 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 VSD, SOURCE-TO-DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 9. Diode Forward Voltage vs. Current Figure 10. Threshold Voltage with Temperature http://onsemi.com 4 150 2N7002K TYPICAL CHARACTERISTICS RqJC(t) (C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 Duty Cycle = 0.5 100 10 0.2 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (s) Figure 11. Thermal Response - 1 sq in pad RqJC(t) (C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 Duty Cycle = 0.5 100 10 0.2 0.1 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (s) Figure 12. Thermal Response - minimum pad http://onsemi.com 5 2N7002K PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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