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SS8550 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8550 Rev. 1.1.0
November 2014
SS8550
PNP Epitaxial Silicon Transistor
Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8050
• Collector Current: IC = 1.5 A
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
SS8550BBU S8550 TO-92 3L Bulk
SS8550CBU S8550 TO-92 3L Bulk
SS8550CTA S8550 TO-92 3L Ammo
SS8550DBU S8550 TO-92 3L Bulk
SS8550DTA S8550 TO-92 3L Ammo
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -6 V
ICCollector Current -1.5 A
TJJunction Temperature 150 °C
TSTG Storage Temperature -65 to 150 °C
1. Emitter 2. Base 3. Collector
TO-92
1
SS8550 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8550 Rev. 1.1.0 2
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
hFE Classification
Symbol Parameter Value Unit
PDPower Dissipation 1 W
Derate Above 25°C8mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 125 °C/W
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = -100 μA, IE = 0 -40 V
BVCEO Collector-Emitter Breakdown Voltage IC = -2 mA, IB = 0 -25 V
BVEBO Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0 -6 V
ICBO Collector Cut-Of f Curren t VCB = -35 V, IE = 0 -100 nA
IEBO Emitter Cut-Off Current VEB = -6 V, IC = 0 -100 nA
hFE1 DC Current Gain VCE = -1 V, IC = -5 mA 45 170
hFE2 VCE = -1 V, IC = -100 mA 85 160 300
hFE3 VCE = -1 V, IC = -800 mA 40 80
VCE(sat) Collector-Emitter Saturation Voltage IC = -800 mA , IB = -8 0 mA -0.28 -0.50 V
VBE(sat) Base-Emitter Saturation Voltage IC = -800 mA , IB = -8 0 mA -0.98 -1.20 V
VBE(on) Base-Emitter On Voltage VCE = -1 V, IC = -10 mA -0.66 -1.00 V
Cob Output Capacitance VCB = -10 V, IE = 0,
f = 1 MHz 15 pF
fTCurrent Gain Bandwidth Product VCE = -10 V, IC = -50 mA 100 200 MHz
Classification B C D
hFE2 85 ~ 160 120 ~ 200 160 ~ 300
SS8550 — PNP Epitaxial Silicon Transistor
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SS8550 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
-0.4 -0.8 -1.2 -1.6 -2.0
-0.1
-0.2
-0.3
-0.4
-0.5
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 VCE = -1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-10
-100
-1000
-10000
VCE(sat)
VBE(sat)
IC=10IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100 VCE = -1V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100 -1000
1
10
100 f=1MHz
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
10
100
1000 VCE=-10V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
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1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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