1996 Microchip Technology Inc. DS11127G-page 1
FEATURES
Fast Read Access Time—150 ns
CMOS Technology for Low Power Dissipation
- 30 mA Active
- 100
µ
A Standby
Fast Byte Write Time—200
µ
s or 1 ms
Data Retention >200 years
High Endurance - Minimum 10
4
Erase/Write Cycles
Automatic Write Operation
- Internal Control Timer
- Auto-Clear Before Write Operation
- On-Chip Address and Data Latches
Data Polling; Ready/Busy
Chip Clear Operation
Enhanced Data Protection
-V
CC
Detector
- Pulse Filter
- Write Inhibit
Electronic Signature for Device Identification
5-Volt-Only Operation
Organized 2Kx8 JEDEC Standard Pinout
- 28 Pin Dual-In-Line Package
- 32-Pin PLCC Package
- 28-Pin Thin Small Outline Package (TSOP)
8x20mm
- 28-Pin Very Small Outline Package (VSOP)
8x13.4mm
Available for Extended Temperature Ranges:
- Commercial: 0˚C to +70˚C
- Industrial: -40˚C to +85˚C
DESCRIPTION
The Microchip Technology Inc. 28C17A is a CMOS 16K non-
volatile electrically Erasable PROM. The 28C17A is
accessed like a static RAM for the read or write cycles without
the need of external components. During a “byte write”, the
address and data are latched internally , freeing the micropro-
cessor address and data bus for other operations. Following
the initiation of write cycle, the device will go to a busy state
and automatically clear and write the latched data using an
internal control timer. To determine when the write cycle is
complete, the user has a choice of monitoring the Ready/
Busy output or using Data polling. The Ready/Busy pin is an
open drain output, which allows easy configuration in wired-
or systems. Alternatively , Data polling allows the user to read
the location last written to when the write operation is com-
plete. CMOS design and processing enables this part to be
used in systems where reduced power consumption and reli-
ability are required. A complete family of packages is of fered
to provide the utmost flexibility in applications.
PACKAGE TYPES
BLOCK DIAGRAM
• Pin 1 indicator on PLCC on top of package
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
RDY/BSY
NC
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
Vcc
WE
NC
A8
A9
NC
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
SS
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6
A7
NC
RDY/BSY
NU
Vcc
WE
NC
I/O1
I/O2
Vss
NU
I/O3
I/O4
I/O5
14
15
16
17
18
19
20
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
OE
NC
A9
A8
NC
WE
Vcc
RDY/BSY
NC
A7
A6
A5
A4
A3
A10
CE
I/07
I/06
I/05
I/04
I/03
Vss
I/02
I/01
I/00
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
21
20
19
VSS
I/O2
14
13
12
OE
NC
A9
A8
22
23
24
RDY/BSY
NC
A7
1
2
3
4
5
25
26
27
28
6
7
NC
WE
VCC
A6
A5
A4
A3
I/O7 
I/O6
I/O5
I/O4
I/O3
I/O1 
I/O0
A0
A1
A2
18
17
16
15
11
10
9
8
DIP/SOIC
PLCC
TSOP VSOP
I/O0 I/O7
Input/Output
Buffers
Chip Enable/
Output Enable
Control Logic
CE
OE
Data Protection
Circuitry
A10
Y Gating
16K bit
Cell Matrix
X
Decoder
Y
Decoder
A0
Data
Poll
Auto Erase/Write
Timing
VCC
VSS
WE
L
a
t
c
h
e
s
Program Voltage
Generation
Rdy/
Busy
28C17A
16K (2K x 8) CMOS EEPROM
This document was created with FrameMaker404
28C17A
DS11127G-page 2
1996 Microchip Technology Inc.
1.0 ELECTRICAL CHARA CTERISTICS
1.1 MAXIMUM RATINGS*
V
CC
and input voltages w.r.t. V
SS
.......-0.6V to + 6.25V
Voltage on OE w.r.t. V
SS
.....................-0.6V to +13.5V
Voltage on A9 w.r.t. V
SS
......................-0.6V to +13.5V
Output Voltage w.r.t. V
SS
................ -0.6V to V
CC
+0.6V
Storage temperature ..........................-65˚C to +125˚C
Ambient temp. with power applied .......-50˚C to +95˚C
*Notice:
Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating con-
ditions for extended periods may affect device reliability.
TABLE 1-1: PIN FUNCTION TABLE
Name Function
A0 - A10 Address Inputs
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
RDY/Busy Ready/Busy
V
CC
+5V Power Supply
V
SS
Ground
NC No Connect; No Internal Connec-
tion
NU Not Used; No External Connection
is Allowed
TABLE 1-2: READ/WRITE OPERATION DC CHARACTERISTICS
V
CC
= +5V
±
10%
Commercial (C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40˚C to +85˚C
Parameter Status Symbol Min Max Units Conditions
Input Voltages Logic ‘1’
Logic ‘0’ V
IH
V
IL
2.0
-0.1 Vcc+1
0.8 V
V
Input Leakage I
LI
-10 10
µ
AV
IN
= -0.1V to Vcc +1
Input Capacitance C
IN
—10pFV
IN
= 0V; Tamb = 25˚C;
f = 1 MHz
Output Voltages Logic ‘1’
Logic ‘0’ V
OH
V
OL
2.4 0.45 V
VI
OH
= -400
µ
A
I
OL
= 2.1 mA
Output Leakage I
LO
-10 10
µ
AV
OUT
= -0.1V to V
CC
+0.1V
Output Capacitance C
OUT
—12pFV
IN
= 0V; Tamb = 25˚C;
f = 1 MHz
Power Supply Current, Active TTL input I
CC
30 mA f = 5 MHz (Note 1)
V
CC
= 5.5V;
Power Supply Current, Standby TTL input
TTL input
CMOS input
I
CC
(
S
)
TTL
I
CC
(
S
)
TTL
I
CC
(
S
)
CMOS
—2
3
100
mA
mA
µ
A
CE = V
IH
(0˚C to +70˚C)
CE = V
IH
(-40˚C to +85˚C)
CE = V
CC
-0.3 to Vcc +1
Note 1: AC power supply current above 5MHz: 1mA/MHz.
1996 Microchip Technology Inc. DS11127G-page 3
28C17A
TABLE 1-3: READ OPERATION AC CHARACTERISTICS
FIGURE 1-1: READ WAVEFORMS
AC Testing Waveform: V
IH
= 2.4V; V
IL
= 0.45V; V
OH
= 2.0V; V
OL
= 0.8V
Output Load: 1 TTL Load + 100 pF
Input Rise and Fall Times: 20 ns
Ambient Temperature: Commercial (C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40˚C to +85˚C
Parameter Symbol 28C17A-15 28C17A-20 28C17A-25 Units Conditions
Min Max Min Max Min Max
Address to Output Delay t
ACC
150 200 250 ns OE = CE = V
IL
CE to Output Delay t
CE
150 200 250 ns OE = V
IL
OE to Output Delay t
OE
—70—80—100nsCE
= V
IL
CE or OE High to Output
Float t
OFF
050055070ns
Output Hold from Address,
CE or OE, whichever occurs
first.
t
OH
0—0—0—ns
Endurance 1M 1M 1M cycles 25
°
C, Vcc =
5.0V, Block
Mode (Note)
Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance Model which can be obtained on our BBS or website.
Address
CE
VIH
VIL
VIH
VIL
VIH
VIL
OE
Data
WE
VOH
VOL
VIH
VOL
Address Valid
High Z Valid Output
tACC
(1) tOFF is specified for OE or CE, whichever occurs first
(2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE
(3) This parameter is sampled and is not 100% tested
High Z
tOH
tOFF(1,3)
Notes:
tOE(2)
tCE(2)
28C17A
DS11127G-page 4
1996 Microchip Technology Inc.
TABLE 1-4: BYTE WRITE AC CHARACTERISTICS
FIGURE 1-2: PROGRAMMING WAVEFORMS
AC Testing Waveform: V
IH
= 2.4V; V
IL
= 0.45V; V
OH
= 2.0V; V
OL
= 0.8V
Output Load: 1 TTL Load + 100 pF
Input Rise/Fall Times: 20 ns
Ambient Temperature: Commercial (C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40˚C to +85˚C
Parameter Symbol Min Max Units Remarks
Address Set-Up Time t
AS
10 ns
Address Hold Time t
AH
50 ns
Data Set-Up Time t
DS
50 ns
Data Hold Time t
DH
10 ns
Write Pulse Width t
WPL
100 ns Note 1
Write Pulse High Time t
WPH
50 ns
OE Hold Time t
OEH
10 ns
OE Set-Up Time t
OES
10 ns
Data Valid Time t
DV
1000 ns Note 2
Time to Device Busy t
DB
250ns
Write Cycle Time (28C17A)t
WC
1 ms 0.5 ms typical
Write Cycle Time (28C17AF) t
WC
200
µ
s 100
µ
s typical
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the pos-
itive edge of CE or WE, whichever occurs first
2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until t
DH
after
the positive edge of WE or CE, whichever occurs first.
tAS tAH
tWPL
tDS tDH
tOES
tOEH
tWC
Address
CE, WE
Data In
OE
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
Rdy/Busy VOH
VOL tDB
tDV
Busy Ready
1996 Microchip Technology Inc. DS11127G-page 5
28C17A
FIGURE 1-3: DATA POLLING WAVEFORMS
FIGURE 1-4: CHIP CLEAR WAVEFORMS
TABLE 1-5: SUPPLEMENTARY CONTROL
Mode CE OE WE A9 Vcc I/O
I
Chip Clear V
IL
V
H
V
IL
XV
CC
Extra Row Read V
IL
V
IL
V
IH
A9 = V
H
V
CC
Data Out
Extra Row Write * V
IH
* A9 = V
H
V
CC
Data In
Note 1: V
H
= 12.0V
±
0.5V * Pulsed per programming waveforms.
Address Valid Last Written
Address Valid
tACC
tCE
tWPL
tWPH
tDV
tWC
tOE
True Data Out
Data In
Valid
VIH
VIL
Data
OE
WE
CE
Address
I/O7 Out
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VH
VIH
CE
OE
WE
tStH
tW
tS= = 1µs
tH
= 10ms
tW
VIH
VIL
VIH
VIL
= 12.0V ±0.5V
VH
28C17A
DS11127G-page 6
1996 Microchip Technology Inc.
2.0 DEVICE OPERATION
The Microchip Technology Inc. 28C17A has four basic
modes of operation—read, standby, write inhibit, and
byte write—as outlined in the following table.
2.1 Read Mode
The 28C17A has two control functions, both of which
must be logically satisfied in order to obtain data at the
outputs. Chip enable (CE) is the power control and
should be used for device selection. Output Enable
(OE) is the output control and is used to gate data to
the output pins independent of device selection.
Assuming that addresses are stable, address access
time (tACC) equal to the delay from CE to output (tCE).
Data is available at the output tOE after the falling edge
of OE, assuming that CE has been low and addresses
have been stable for at least tACC-tOE.
2.2 Standby Mode
The 28C17A is placed in the standby mode by applying
a high signal to the CE input. When in the standby
mode, the outputs are in a high impedance state, inde-
pendent of the OE input.
2.3 Data Protection
In order to ensure data integrity, especially during criti-
cal power-up and power-down transitions, the following
enhanced data protection circuits are incorporated:
First, an internal VCC detect (3.3 volts typical) will inhibit
the initiation of non-volatile programming operation
when VCC is less than the VCC detect circuit trip.
Second, there is a WE filtering circuit that prevents WE
pulses of less than 10 ns duration from initiating a write
cycle.
Third, holding WE or CE high or OE low , inhibits a write
cycle during power-on and power-off (VCC).
Operation
Mode CE OE WE I/O Rdy/Busy
(1)
Read L L H DOUT H
Standby H X X High Z H
Write Inhibit H X X High Z H
Write Inhibit X L X High Z H
Write Inhibit X X H High Z H
Byte Write L H L DIN L
Byte Clear Automatic Before Each “Write”
Note 1: Open drain output.
2: X = Any TTL level.
2.4 Write Mode
The 28C17A has a write cycle similar to that of a Static
RAM. The write cycle is completely self-timed and ini-
tiated by a low going pulse on the WE pin. On the fall-
ing edge of WE, the address information is latched. On
rising edge, the data and the control pins (CE and OE)
are latched. The Ready/Busy pin goes to a logic low
level indicating that the 28C17A is in a write cycle which
signals the microprocessor host that the system bus is
free for other activity. When Ready/Busy goes back to
a high, the 28C17A has completed writing and is ready
to accept another cycle.
2.5 Data Polling
The 28C17A features Data polling to signal the comple-
tion of a byte write cycle. During a write cycle, an
attempted read of the last byte written results in the
data complement of I/O7 (I/O0 to I/O6 are indetermin-
able). After completion of the write cycle, true data is
available. Data polling allows a simple read/compare
operation to determine the status of the chip eliminat-
ing the need for external hardware.
2.6 Electronic Signature for Device
Identification
An extra row of 32 bytes of EEPROM memory is avail-
able to the user for device identification. By raising A9
to 12V ±0.5V and using address locations 7EO to 7FF,
the additional bytes can be written to or read from in the
same manner as the regular memory array.
2.7 Chip Clear
All data may be cleared to 1's in a chip clear cycle by
raising OE to 12 volts and bringing the WE and CE low .
This procedure clears all data, except for the extra row .
28C17A
1996 Microchip Technology Inc. DS11127G-page 7
28C17A Product Identification System
To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed
sales offices.
Package: L = Plastic Leaded Chip Carrier (PLCC)
P = Plastic DIP (600 mil)
TS = Thin Small Outline Package (TSOP) 8x20mm
VS = Very Small Outline Package (VSOP) 8x13.4mm
Temperature Blank = 0°C to +70°C
Range: I= -40°C to +85°C
Access Time: 15 150 ns
20 200 ns
25 250 ns
Shipping: Blank Tube
T Tape and Reel “L” and “SO”
Option: Blank = twc = 1ms
F= twc = 200 µs
Device: 28C17A 2K x 8 CMOS EEPROM
28C17A F T–15I/P
DS11127G-page 8 1996 Microchip Technology Inc.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No repre-
sentation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement
of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not autho-
rized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and
name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
WORLDWIDE SALES & SERVICE
ASIA/PACIFIC
China
Microchip Technology
Unit 406 of Shanghai Golden Bridge Bldg.
2077 Yan’an Road West, Hongiao District
Shanghai, Peoples Republic of China
Tel: 86 21 6275 5700
Fax: 011 86 21 6275 5060
Hong Kong
Microchip Technology
RM 3801B, Tower Two
Metroplaza
223 Hing Fong Road
Kwai Fong, N.T. Hong Kong
Tel: 852 2 401 1200 Fax: 852 2 401 3431
India
Microchip Technology
No. 6, Legacy, Convent Road
Bangalore 560 025 India
Tel: 91 80 526 3148 Fax: 91 80 559 9840
Korea
Microchip Technology
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku,
Seoul, Korea
Tel: 82 2 554 7200 Fax: 82 2 558 5934
Singapore
Microchip Technology
200 Middle Road
#10-03 Prime Centre
Singapore 188980
Tel: 65 334 8870 Fax: 65 334 8850
Taiwan, R.O.C
Microchip Technology
10F-1C 207
Tung Hua North Road
Taipei, Taiwan, ROC
Tel: 886 2 717 7175 Fax: 886 2 545 0139
EUROPE
United Kingdom
Arizona Microchip Technology Ltd.
Unit 6, The Courtyard
Meadow Bank, Furlong Road
Bourne End, Buckinghamshire SL8 5AJ
Tel: 44 1628 850303 Fax: 44 1628 850178
France
Arizona Microchip Technology SARL
Zone Industrielle de la Bonde
2 Rue du Buisson aux Fraises
91300 Massy - France
Tel: 33 1 69 53 63 20 Fax: 33 1 69 30 90 79
Germany
Arizona Microchip Technology GmbH
Gustav-Heinemann-Ring 125
D-81739 Muenchen, Germany
Tel: 49 89 627 144 0 Fax: 49 89 627 144 44
Italy
Arizona Microchip Technology SRL
Centro Direzionale Colleone Pas Taurus 1
Viale Colleoni 1
20041 Agrate Brianza
Milan Italy
Tel: 39 39 6899939 Fax: 39 39 689 9883
JAPAN
Microchip Technology Intl. Inc.
Benex S-1 6F
3-18-20, Shin Yokohama
Kohoku-Ku, Yokohama
Kanagawa 222 Japan
Tel: 81 45 471 6166 Fax: 81 45 471 6122
9/3/96
AMERICAS
Corporate Office
Microchip Technology Inc.
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 602 786-7200 Fax: 602 786-7277
Technical Support:
602 786-7627
Web:
http://www.microchip.com
Atlanta
Microchip Technology Inc.
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770 640-0034 Fax: 770 640-0307
Boston
Microchip Technology Inc.
5 Mount Royal Avenue
Marlborough, MA 01752
Tel: 508 480-9990 Fax: 508 480-8575
Chicago
Microchip Technology Inc.
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 708 285-0071 Fax: 708 285-0075
Dallas
Microchip Technology Inc.
14651 Dallas Parkway, Suite 816
Dallas, TX 75240-8809
Tel: 972 991-7177 Fax: 972 991-8588
Dayton
Microchip Technology Inc.
Suite 150
Two Prestige Place
Miamisburg, OH 45342
Tel: 513 291-1654 Fax: 513 291-9175
Los Angeles
Microchip Technology Inc.
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 714 263-1888 Fax: 714 263-1338
New Y ork
Microchip Technmgy Inc.
150 Motor Parkway, Suite 416
Hauppauge, NY 11788
Tel: 516 273-5305 Fax: 516 273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408 436-7950 Fax: 408 436-7955
Toronto
Microchip Technology Inc.
5925 Airport Road, Suite 200
Mississauga, Ontario L4V 1W1, Canada
Tel: 905 405-6279 Fax: 905 405-6253
All rights reserved. 1996, Microchip Technology Incorporated, USA. 9/96
Printed on recycled paper.