AUTOMOTIVE GRADE AUIRF7207Q HEXFET(R) Power MOSFET Features Advanced Process Technology Low On-Resistance Logic Level Gate Drive P-Channel MOSFET Dynamic dV/dT Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified* A D S 1 8 S 2 7 S 3 6 D G 4 5 D VDSS -20V RDS(on) max 0.06 ID -5.4A D Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number Package Type AUIRF7207Q SO-8 SO-8 Standard Pack Form Tape and Reel Quantity 2500 Orderable Part Number AUIRF7207QTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM EAS TJ TSTG Parameter Drain-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Single Pulse Avalanche Energy (Thermally Limited) Operating Junction and Storage Temperature Range Max. -20 -5.4 -4.3 -43 2.5 1.6 0.02 12 -16 140 -55 to + 150 Units V A W W/C V V mJ C Thermal Resistance Symbol RJA Parameter Junction-to-Ambient Typ. Max. Units --- 50 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-16 AUIRF7207Q Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 --- --- V VGS = 0V, ID = -250A --- -0.011 --- V/C Reference to 25C, ID = -1mA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- --- 0.06 RDS(on) Static Drain-to-Source On-Resistance VGS = -4.5V, ID = -5.4A --- --- 0.125 VGS = -2.7V, ID = -2.7A VGS(th) Gate Threshold Voltage -0.7 --- -1.6 V VDS = VGS, ID = -250A gfs Forward Transconductance 8.3 --- --- S VDS = -10V, ID = -5.4A --- --- -1.0 VDS = -16V, VGS = 0V Drain-to-Source Leakage Current A IDSS --- --- -25 VDS = -16V, VGS = 0V, TJ = 125C IGSS Gate-to-Source Forward Leakage --- --- -100 VGS = 12V nA Gate-to-Source Reverse Leakage --- --- 100 VGS = -12V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge --- 15 22 ID = -5.4A Qgs Gate-to-Source Charge --- 2.2 3.3 nC VDS = -10V VGS = -4.5V Qgd Gate-to-Drain ("Miller") Charge --- 5.7 8.6 td(on) Turn-On Delay Time --- 11 --- VDD = -10V ID = -1.0A tr Rise Time --- 24 --- ns td(off) Turn-Off Delay Time --- 43 --- RG = 6.0 Fall Time --- 41 --- tf RD = 10 Input Capacitance --- 780 --- VGS = 0V Ciss Coss Output Capacitance --- 410 --- pF VDS = -15V = 1.0 MHz Crss Reverse Transfer Capacitance --- 200 --- Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current --- --- -3.1 MOSFET symbol IS A (Body Diode) showing the integral reverse Pulsed Source Current --- --- -43 ISM A (Body Diode) p-n junction diode. VSD Diode Forward Voltage --- --- -1.0 V TJ = 25C, IS = -3.1A, VGS = 0V dv/dt Peak Diode Recovery --- 5.0 --- V/ns TJ = 175C, IS= -3.1A, VDS = -20V Reverse Recovery Time Reverse Recovery Charge trr Qrr --- --- 42 50 63 75 ns nC TJ = 25C, IF = -3.1A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 9.6mH, RG = 25, IAS = -5.4A. ISD -5.4A, di/dt -79A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec. 2 2015-11-16 AUIRF7207Q 100 100 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) TOP 10 -2.25V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 -2.25V 10 2.0 TJ = 25 C TJ = 150 C 10 V DS = -10V 20s PULSE WIDTH 5.0 RDS(on), Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) 100 4.0 6.0 ID = -5.4A 1.5 1.0 0.5 0.0 -60 -40 -20 -VGS, Gate-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 1200 Ciss 800 Coss 0 Crss 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 0 20 40 60 80 100 120 140 160 ( C) Fig. 4 Normalized On-Resistance vs. Temperature VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 400 VGS = -10V TJ, Junction Temperature Fig. 3 Typical Transfer Characteristics 1600 10 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 3.0 1 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) 1 2.0 20s PULSE WIDTH TJ = 150 C 1 0.1 ID = -5.4A VDS =-10V 8 6 4 2 0 FOR TEST CIRCUIT SEE FIGURE 13 0 5 10 15 20 25 30 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2015-11-16 AUIRF7207Q 100 100 TJ = 150 C -IID, Drain Current (A) -ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 25 C 1 0.1 0.4 V GS = 0 V 0.6 0.7 0.9 1.1 1.2 100us 10 1ms 1 1.4 TA = 25 C TJ = 150 C Single Pulse 1 10 Fig 8. Maximum Safe Operating Area Fig. 7 Typical Source-to-Drain Diode Forward Voltage EAS , Single Pulse Avalanche Energy (mJ) 6.0 -ID, Drain Current (A) 5.0 4.0 3.0 2.0 1.0 25 50 75 100 TC, Case Temperature 100 -VDS, Drain-to-Source Voltage (V) -V SD,Source-to-Drain Voltage (V) 0.0 10ms 125 150 ( C) 400 TOP BOTTOM 300 200 100 0 25 50 75 100 125 Starting T J, Junction Temperature Fig 9. Maximum Drain Current vs. Case Temperature ID -2.4A -4.3A -5.4A 150 ( C) Fig 10. Maximum Avalanche Energy vs. Drain Current Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (T HERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1, Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2015-11-16 AUIRF7207Q Fig 14. Peak Diode Recovery dv/dt Test Circuit for P-Channel HEXFET(R) Power MOSFETs Fig 14a. Unclamped Inductive Test Circuit Fig 15a. Switching Time Test Circuit Fig 16a. Gate Charge Test Circuit 5 Fig 14b. Unclamped Inductive Waveforms Fig 15b. Switching Time Waveforms Fig 16b. Gate Charge Waveform 2015-11-16 AUIRF7207Q SO-8 Package Outline Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e 1 .025 BASIC 0.635 B ASIC 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] B 8X L 8X c 7 F O O T P R IN T N O TES: 1 . D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 8 X 0 .7 2 [ .0 2 8 ] 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 . 1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A SU B STR ATE. 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 6 2015-11-16 AUIRF7207Q SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 2015-11-16 AUIRF7207Q Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level SO-8 Machine Model ESD Human Body Model Charged Device Model MSL1 Class M1B (+/- 100V) AEC-Q101-002 Class H1A (+/- 500V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes RoHS Compliant Highest passing voltage. Revision History Date 4/3/2014 11/16/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated datasheet with corporate template Corrected ordering table on page 1. 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