FOD3184S - Fairchild Semiconductor Corporation

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

FOD3184 Rev. 1.0.4

February 2011

FOD3184

3A Output Current, High Speed MOSFET/IGBT

Gate Driver Optocoupler

Features

■

High noise immunity characterized by 50kV/µs (Typ.)

common mode rejection @ V

CM

= 2,000V

■

Guaranteed operating temperature range of

-40°C to +100°C

■

3A peak output current for medium power

MOSFET/IGBT

■

Fast switching speed

– 210ns max. propagation delay

– 65ns max pulse width distortion

■

Fast output rise/fall time

– Offers lower dynamic power dissipation

■

250kHz maximum switching speed

■

Wide V

DD

operating range from 15V to 30V

■

Use of P-Channel MOSFETs at output stage

enables output voltage swing close to the supply rail

(rail-to-rail output)

■

Under voltage lockout protection (UVLO) with

hysteresis – optimized for driving IGBTs

■

Safety and regulatory approvals

– UL1577, 5,000 VAC

RMS

for 1 min.

– DIN EN/IEC 60747-5-2, 1,414 peak working

insulation voltage

• Minimum creepage distance of 8.0mm

• Minimum clearance distance of 8mm to 16mm

(option TV or TSV)

• Minimum insulation thickness of 0.5mm

Applications

■

Plasma Display Panel

■

High performance DC/DC convertor

■

High performance switch mode power supply

■

High performance uninterruptible power supply

■

Isolated Power MOSFET/IGBT gate drive

Description

The FOD3184 is a 3A Output Current, High Speed

MOSFET/IGBT Gate Drive Optocoupler. It consists of a

aluminium gallium arsenide (AlGaAs) light emitting diode

optically coupled to a CMOS detector with PMOS and

NMOS output power transistors integrated circuit power

stage. It is ideally suited for high frequency driving of

power MOSFETS/IGBT used in Plasma Display Panels

(PDPs), motor control inverter applications and high

performance DC/DC converters.

The device is packaged in an 8-pin dual in-line housing

compatible with 260°C reflow processes for lead free

solder compliance.

Functional Block Diagram Package Outlines

8

1

8

1

8

1

2

3

4

8

7

6

5

NC

ANODE

CATHODE

NC

VDD

VO2

VO1

VSS

Note:

A 0.1µF bypass capacitor must be connected between pins 5 and 8.

FOD3184 Rev. 1.0.4 2

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Truth Table

Pin Definitions

LED

V

DD

–

V

SS

“Positive Going”

(Turn-on)

V

DD

–

V

SS

“Negative Going”

(Turn-off) V

O

Off 0V to 30V 0V to 30V Low

On 0V to 11.5V 0V to 10V Low

On 11.5V to 13.5V 10V to 12V Transition

On 13.5V to 30V 12V to 30V High

Pin # Name Description

1NCNot Connected

2 Anode LED Anode

3 Cathode LED Cathode

4NCNot Connected

5V

SS

Negative Supply Voltage

6V

O2

Output Voltage 2 (internally connected to V

O1

)

7V

O1

Output Voltage 1

8V

DD

Positive Supply Voltage

FOD3184 Rev. 1.0.4 3

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Safety and Insulation Ratings

As per DIN EN/IEC 60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety

limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Symbol Parameter Min. Typ. Max. Unit

Installation Classiﬁcations per DIN VDE 0110/1.89 Table 1

For Rated Mains Voltage < 150Vrms I–IV

For Rated Mains Voltage < 300Vrms I–IV

For Rated Mains Voltage < 450Vrms I–III

For Rated Mains Voltage < 600Vrms I–III

For Rated Mains Voltage < 1000Vrms (Option T, TS) I–III

Climatic Classiﬁcation 40/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

CTI Comparative Tracking Index 175

V

PR

Input to Output Test Voltage, Method b,

V

IORM

x 1.875 = V

PR

, 100% Production Test with

tm = 1 sec., Partial Discharge < 5pC

2651

Input to Output Test Voltage, Method a,

V

IORM

x 1.5 = V

PR

, Type and Sample Test with

tm = 60 sec.,Partial Discharge < 5 pC

2121

V

IORM

Max Working Insulation Voltage 1,414 V

peak

V

IOTM

Highest Allowable Over Voltage 6000 V

peak

External Creepage 8 mm

External Clearance 7.4 mm

External Clearance (for Option T or TS - 0.4” Lead Spacing) 10.16 mm

Insulation Thickness 0.5 mm

Safety Limit Values – Maximum Values Allowed in the

Event of a Failure

T

Case

Case Temperature 150 °C

I

S,INPUT

Input Current 25 mA

P

S,OUTPUT

Output Power 250 mW

R

IO

Insulation Resistance at T

S

, V

IO

= 500V 10

9

Ω

FOD3184 Rev. 1.0.4 4

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Absolute Maximum Ratings

(T

A

= 25°C unless otherwise speciﬁed)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Recommended Operating Conditions

The Recommended Operating Conditions table deﬁnes the conditions for actual device operation. Recommended

operating conditions are speciﬁed to ensure optimal performance to the datasheet speciﬁcations. Fairchild does not

recommend exceeding them or designing to absolute maximum ratings.

Symbol

Parameter

Value Units

T

STG

Storage Temperature -40 to +125 °C

T

OPR

Operating Temperature -40 to +100 °C

T

J

Junction Temperature -40 to +125 °C

T

SOL

Lead Solder Temperature – Wave solder

(Refer to Reﬂow Temperature Proﬁle, pg. 22)

260 for 10 sec. °C

I

F(AVG)

Average Input Current

(1)

25 mA

I

F(tr, tf)

LED Current Minimum Rate of Rise/Fall 250 ns

V

R

Reverse Input Voltage 5 V

I

OH(PEAK)

“High” Peak Output Current

(2)

3A

I

OL(PEAK)

“Low” Peak Output Current

(2)

3A

V

DD

– V

SS

Supply Voltage -0.5 to 35 V

V

O(PEAK)

Output Voltage 0 to V

DD

V

P

O

Output Power Dissipation

(3)

250 mW

P

D

Total Power Dissipation

(3)

295 mW

Symbol

Parameter

Value Units

V

DD

– V

SS

Power Supply 15 to 30 V

I

F(ON)

Input Current (ON) 10 to 16 mA

V

F(OFF)

Input Voltage (OFF) -3.0 to 0.8 V

FOD3184 Rev. 1.0.4 5

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Electrical-Optical Characteristics (DC)

Apply over all recommended conditions, typical value is measured at V

DD

= 30V, V

SS

= 0V, T

A

= 25°C,

unless otherwise speciﬁed.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

OH

High Level Output Current V

OH

= (V

DD

– V

SS

– 1V) -0.9 -0.5 A

V

OH

= (V

DD

– V

SS

– 6V) -2.5

I

OL

Low Level Output Current V

OL

= (V

DD

– V

SS

+ 1V) 0.5 1 A

V

OL

= (V

DD

– V

SS

+ 6V) 2.5

V

OH

High Level Output Voltage

(4)(5)

I

O

= -100mA, I

F

= 10mA V

DD

– 0.5 V

I

O

= -2.5A, I

F

= 10mA V

DD

– 7

V

OL

Low Level Output Voltage

(4)(5)

I

O

= 100mA , I

F

= 0mA V

SS

+ 0.5 V

I

O

= 2.5A, I

F

= 0mA V

SS

+ 7

I

DDH

High Level Supply Current Output Open,

I

F

= 10 to 16mA

2.6 3.5 mA

I

DDL

Low Level Supply Current Output Open,

V

F

= -3.0 to 0.8V

2.5 3.5 mA

I

FLH

Threshold Input Current Low to

High

IO = 0mA, VO > 5V 3.0 7.5 mA

VFHL Threshold Input Voltage High to Low IO = 0mA, VO < 5V 0.8 V

VFInput Forward Voltage IF = 10mA 1.1 1.43 1.8 V

∆VF/T

ATemperature Coefﬁcient of Forward

Voltage

IF = 10mA -1.5 mV/°C

VUVLO+ UVLO Threshold VO > 5V, IF = 10mA 11.5 13.0 13.5 V

VUVLO– VO < 5V, IF = 10mA 10.0 11.5 12.0 V

UVLOHYST UVLO Hysteresis 1.5 V

BVRInput Reverse Breakdown Voltage IR = 10µA 5 V

CIN Input Capacitance f = 1MHz, VF = 0V 25 pF

FOD3184 Rev. 1.0.4 6

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Switching Characteristics

Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = 0V, TA = 25°C,

unless otherwise speciﬁed.

*Typical values at TA = 25°C

Isolation Characteristics

*Typical values at TA = 25°C

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

tPLH Propagation Delay Time to High Output Level(6) IF = 10mA,

Rg = 10Ω,

f = 250kHz,

Duty Cycle = 50%,

Cg = 10nF

50 120 210 ns

tPHL Propagation Delay Time to Low Output Level(6) 50 145 210 ns

PWD Pulse Width Distortion(7) 35 65 ns

PDD

(tPHL – tPLH)

Propagation Delay Difference Between Any

Two Pa rts(8)

-90 90 ns

trRise Time CL = 10nF,

Rg = 10Ω

38 ns

tfFall Time 24 ns

tUVLO ON UVLO Turn On Delay 2.0 µs

tUVLO OFF UVLO Turn Off Delay 0.3 µs

| CMH | Output High Level Common Mode Transient

Immunity(9) (10)

TA = +25°C,

If = 10mA to 16mA,

VCM = 2kV,

VDD = 30V

35 50 kV/µs

| CML | Output Low Level Common Mode Transient

Immunity(9) (11)

TA = +25°C,

Vf = 0V,

VCM = 2kV,

VDD = 30V

35 50 kV/µs

Symbol Parameter Test Conditions Min. Typ.* Max. Unit

VISO Withstand Isolation Voltage(12) (13) TA = 25°C,

R.H. < 50%, t = 1min.,

II-O ≤ 10µA

5000 Vrms

RI-O Resistance (input to output)(13) VI-O = 500V 1011 Ω

CI-O Capacitance (input to output) Freq. = 1MHz 1 pF

FOD3184 Rev. 1.0.4 7

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Notes:

1. Derate linearly above +79°C free air temperature at a rate of 0.37mA/°C.

2. Maximum pulse width = 10µs.

3 Derate linearly above +79°C, free air temperature at the rate of 5.73mW/°C.

4. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VDD

as IOH approaches zero amps.

5. Maximum pulse width = 1ms, maximum duty cycle = 20%.

6. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the

falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input

pulse to the 50% level of the rising edge of the VO signal.

7. PWD is deﬁned as | tPHL – tPLH | for any given device.

8. The difference between tPHL and tPLH between any two FOD3184 parts under same operating conditions, with

equal loads.

9. Pin 1 and 4 need to be connected to LED common.

10. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse

VCM to assure that the output will remain in the high state (i.e. VO > 15V).

11. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse,

VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V).

12. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms,

60Hz for 1 second (leakage detection current limit II-O < 10µA).

13. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted

together.

FOD3184 Rev. 1.0.4 8

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Typical Performance Curves

Fig. 2 Output High Voltage Drop vs. Ambient Temperature

-40 -20 0 20 40 60 80 100

(V

OH

- V

DD

) – HIGH OUTPUT VOLTAGE DROP (V)

0.00

-0.05

-0.10

-0.15

-0.20

-0.25

-0.30

T

A

– AMBIENT TEMPERATURE (°C)

Fig. 1 Output High Voltage Drop vs. Output High Current

0 0.5 1.0 1.5 2.0 2.5

(V

OH

- V

DD

) – HIGH OUTPUT VOLTAGE DROP (V)

0.5

0

-0.5

-1.0

-1.5

-2.0

-2.5

-3.-0

-3.5

I

OH

– OUTPUT HIGH CURRENT (A)

V

DD

= 15V to 30V

V

SS

= 0V

I

F

= 10mA to 16mA

I

O

= -100mA

Fig. 6 Output Low Voltage vs. Ambient Temperature

-40 -20 0 20 40 60 80 100

V

OL

– OUTPUT LOW VOLTAGE (V)

0.00

-0.05

-0.10

-0.15

-0.20

-0.25

-0.30

T

A

– AMBIENT TEMPERATURE (°C)

V

DD

= 15V to 30V

V

SS

= 0V

V

F

= -3V to 0.8V

I

O

= -100mA

Fig. 3 Output High Current vs. Ambient Temperature

-40 -20 0 20 40 60 80 100

I

OH

– OUTPUT HIGH CURRENT (A)

8

6

4

2

0

T

A

– AMBIENT TEMPERATURE (°C)

Frequency = 200Hz

Duty Cycle = 0.2%

I

F

= 10mA to 16mA

V

DD

= 15V to 30V

Frequency = 200Hz

Duty Cycle = 0.1%

I

F

= 10mA to 16mA

V

DD

= 15V to 30V

V

SS

= 0V

T

A

=100°C

T

A

= 25°C

T

A

= -40°C

Fig. 5 Output Low Voltage vs. Output High Current

0 0.5 1.0 1.5 2.0 2.5

V

OL

– OUTPUT LOW VOLTAGE (V)

4

3

2

1

0

I

OH

– OUTPUT HIGH CURRENT (A)

Frequency = 200Hz

Duty Cycle = 99.9%

V

F

(off) = 0.8V

V

DD

= 15V to 30V

V

SS

= 0V

T

A

=100°C T

A

= 25°C

T

A

= -40°C

V

O

= 6V

V

O

= 3V

Fig. 4 Output High Current vs. Ambient Temperature

-40 -20 0 20 40 60 80 100

I

OH

– OUTPUT HIGH CURRENT (A)

8

6

4

2

0

T

A

– AMBIENT TEMPERATURE (°C)

Frequency = 100Hz

Duty Cycle = 0.5%

I

F

= 10mA to 16mA

V

DD

= 15V to 30V

V

O

= 6V

V

O

= 3V

FOD3184 Rev. 1.0.4 9

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Typical Performance Curves (Continued)

Fig. 7 Output Low Current vs. Ambient Temperature

-40 -20 0 20 40 60 80 100

I

OL

– OUTPUT LOW CURRENT (A)

8

6

4

2

0

T

A

– AMBIENT TEMPERATURE (°C)

Frequency = 200Hz

Duty Cycle = 99.8%

V

F

= 0.8V

V

DD

= 15V to 30V

V

O

= 6V

V

O

= 3V

Fig. 8 Output Low Current vs. Ambient Temperature

-40 -20 0 20 40 60 80 100

I

OL

– OUTPUT LOW CURRENT (A)

8

6

4

2

0

T

A

– AMBIENT TEMPERATURE (°C)

Frequency = 100Hz

Duty Cycle = 99.5%

V

F

= 0.8V

V

DD

= 15V to 30V

V

O

= 6V

V

O

= 3V

Fig. 9 Supply Current vs. Ambient Temperature

-40 -20 0 20 40 60 80 100

I

DD

– SUPPLY CURRENT (mA)

3.6

3.4

3.2

3.0

2.8

2.6

2.4

2.2

T

A

– AMBIENT TEMPERATURE (°C)

V

DD

= 15V to 30V

V

SS

= 0V

I

F

= 0mA (for I

DDL

)

I

F

= 10mA (for I

DDH

)

IDDH(30V)

IDDL(30V)

IDDH(15V)

IDDL(15V)

IDDH

IDDL

Fig. 11 Low-to-High Input Current Threshold

vs. Ambient Temperature

-40 -20 0 20 40 60 80 100

I

FLH

– LOW-to-HIGH INPUT CURRENT THRESHOLD (mA)

3.6

3.4

3.2

3.0

2.8

2.6

2.4

2.2

T

A

– AMBIENT TEMPERATURE (°C)

V

DD

= 15V to 30V

V

SS

= 0V

Output = Open

Fig. 10 Supply Current vs. Supply Voltage

15 20 25 30

I

DD

– SUPPLY CURRENT (mA)

3.6

3.2

2.8

2.4

2.0

V

DD

– SUPPLY VOLTAGE (V)

I

F

= 0mA (for I

DDL

)

I

F

= 10mA (for I

DDH

)

V

SS

= 0V

T

A

= 25°C

Fig. 12 Propagation Delay vs. Supply Voltage

15 18 21 24 27 30

t

P

– PROPAGATION DELAY (ns)

250

200

150

100

50

V

DD

– SUPPLY VOLTAGE (V)

I

F

= 10mA to 16mA

T

A

= 25°C

R

G

= 10Ω

C

G

= 10nF

Duty Cycle = 50%

Frequency = 250kHz

t

PHL

t

PLH

FOD3184 Rev. 1.0.4 10

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Typical Performance Curves (Continued)

Fig. 14 Propagation Delay vs. Ambient Temperature

-40 -20 0 20 40 60 80 100

t

P

– PROPAGATION DELAY (ns)

450

350

250

150

50

T

A

– AMBIENT TEMPERATURE (°C)

I

F

= 10mA to 16mA

V

DD

= 15V to 30V

R

G

= 10Ω

C

G

= 10nF

Duty Cycle = 50%

Frequency = 250kHz

Fig. 13 Propagation Delay vs. LED Forward Current

681012 14 18

t

P

– PROPAGATION DELAY (ns)

250

200

150

100

50

I

F

– FORWARD LED CURRENT (mA)

V

DD

= 15V to 30V

T

A

= 25°C

R

G

= 10Ω

C

G

= 10nF

Duty Cycle = 50%

Frequency = 250kHz

t

PHL

t

PLH

Fig. 15 Propagation Delay vs. Series Load Resistance

01020304050

t

P

– PROPAGATION DELAY (ns)

450

350

250

150

50

R

G

– SERIES LOAD RESISTANCE (Ω)

I

F

= 10mA to 16mA

V

DD

= 15V to 30V

C

G

= 10nF

Duty Cycle = 50%

Frequency = 250kHz

t

PHL

t

PLH

Fig. 16 Propagation Delay vs. Series Load Capacitance

020406080100

t

P

– PROPAGATION DELAY (ns)

450

350

250

150

50

100

10

1

0.1

0.01

0.001

C

G

– SERIES LOAD CAPACITANCE (nF)

Fig. 18 Input Forward Current vs. Forward Voltage

0.6 0.8 1.0 1.2 1.4 1.6 1.8

I

F

– FORWARE CURRENT (mA)

V

R

– FORWARE VOLTAGE (V)

I

F

= 10mA to 16mA

V

DD

= 15V to 30V

R

G

= 10Ω

Duty Cycle = 50%

Frequency = 250kHz

t

PHL

t

PLH

t

PHL

t

PLH

Fig. 17 Transfer Characteristics

0 0.5 1.0 1.5 2.0 2.5

V

O

– OUTPUT VOLTAGE (V)

35

30

25

20

15

10

5

0

I

F

– FORWARD LED CURRENT (mA)

V

DD

= 30V

T

A

= 25°C

T

A

=100°C 25°C -40°C

FOD3184 Rev. 1.0.4 11

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Typical Performance Curves (Continued)

Fig. 19 Under Voltage Lockout

051015 20

V

O

– OUTPUT VOLTAGE (V)

20

18

16

14

12

10

8

6

4

2

0

(V

DD

– V

SS

)

– SUPPLY VOLTAGE (V)

(13.00V)

(11.40V)

FOD3184 Rev. 1.0.4 12

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Test Circuit

Figure 20. IOL Test Circuit

Figure 21. IOH Test Circuit

+

Power Supply

VDD = 15V to 30V

Power Supply

V = 6V

1

2

PW = 4.99ms

Period = 5ms

ROUT = 50Ω

R2

100Ω

Frequency = 200Hz

Duty Cycle = 99.8%

VDD = 15V to 30V

VSS = 0V

VF(OFF) = -3.0V to 0.8V

C1

0.1µF

Pulse-In

LED-IFmon

Pulse Generator

Test Conditions:

3

4

8

7

6

5

To Scope

V

OL

R1

100Ω

C2

47µF

+

C3

0.1µF

D1 C4

47µF

+

Iol

1

2

PW = 10µs

Period = 5ms

ROUT = 50Ω

R2

100Ω

Frequency = 200Hz

Duty Cycle = 0.2%

VDD = 15V to 30V

VSS = 0V

IF = 10mA to 16mA

C1

0.1µF

Pulse-In

LED-IFmon

Pulse Generator

Test Conditions:

3

4

8

7

6

5

Power Supply

VDD = 15V to 30V

+

–

Power Supply

V = 6V

To Scope

V

OH

R1

100Ω

C2

47µF

+

C3

0.1µF

D1

Current

Probe

Ioh C4

47µF

+

FOD3184 Rev. 1.0.4 13

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Test Circuit (Continued)

Figure 22. VOH Test Circuit

Figure 23. VOL Test Circuit

1

2

IF = 10 to 16mA

VO

3

4

8

7

6

5

0.1µF

100mA

VDD = 15 to 30V

+

–

1

2

VO

3

4

8

7

6

5

0.1µF

100mA

VDD = 15 to 30V

+

–

FOD3184 Rev. 1.0.4 14

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Test Circuit (Continued)

Figure 24. IDDH Test Circuit

Figure 25. IDDL Test Circuit

1

2

IF = 10 to 16mA

VO

3

4

8

7

6

5

0.1µF

VDD = 30V

+

–

1

2

VF = -3.0 to 0.8V

VO

3

4

8

7

6

5

0.1µF

VDD = 30V

+

–

+

–

FOD3184 Rev. 1.0.4 15

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Test Circuit (Continued)

Figure 26. IFLH Test Circuit

Figure 27. VFHL Test Circuit

Figure 28. UVLO Test Circuit

1

2

VO > 5V

3

4

8

7

6

5

0.1µF

IF

VDD = 15 to 30V

+

–

1

2

VF = –3.0 to 0.8V

VO

3

4

8

7

6

5

0.1µF

VDD = 15 to 30V

+

–

+

–

1

2

VO = 5V

3

4

8

7

6

5

0.1µF

15V or 30V

VDD Ramp

+

–

IF = 10mA

FOD3184 Rev. 1.0.4 16

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Test Circuit (Continued)

Figure 29. tPHL, tPLH, tr and tf Test Circuit and Waveforms

Figure 30. CMR Test Circuit and Waveforms

VO

Probe

F = 250kHz

DC = 50%

IF

VOUT

tPLH

Cg = 10nF

Rg = 10Ω

50Ω

1

2

3

4

8

7

6

5

0.1µF

VDD = 15 to 30V

+

–

+

–

trtf

90%

50%

10%

tPHL

1

2

A

B

VO

3

4

8

7

6

5

0.1µF

VDD = 30V

VCM = 2,000V

IF

+

–

5V +

–

∆t

VCM

VO

Switch at A: IF = 10mA

Switch at B: IF = 0mA

VOH

VOVOL

0V

+ –

FOD3184 Rev. 1.0.4 17

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Package Dimensions

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package speciﬁcations do not expand the terms of Fairchild’s worldwide terms and conditions,

speciﬁcally the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/

Through Hole

Surface Mount – 0.3" Lead Spacing (Option S)

Note:

1. All dimensions are in millimeters.

2. Dimensions are exclusive of burrs, mold fash, and tie bar extrusion.

0.4" Lead Spacing (Option T)

9.40–9.91

Pin 1

6.35–6.86

5.08

MAX

3.05–3.90

(0.78)

2.54 BSC 7.62 TYP

0.20–0.40

0.41–0.56

3.68–3.94 1.14–1.78

0.51 MIN

9.40–9.91

Pin 1

6.35–6.86

15.0° MAX

10.16 TYP

0.20–0.40

5.08

MAX

(0.78)

2.54 BSC

0.41–0.56

3.68–3.94 1.14–1.78

0.51 MIN 3.05–3.90

9.40–9.91

Pin 1

6.35–6.86

(1.54)

(1.78)

(7.49)

(0.76)

(2.54)

(10.54)

Recommended Land Pattern

(Option S)

5.08

MAX

(0.78)

(0.41–0.56)

8.00 MIN

10.30 MAX

2.54 BSC

3.68–3.94 1.14–1.78

0.20–0.40

0.40 MIN

Both sides

0.51 MIN

FOD3184 Rev. 1.0.4 18

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Package Dimensions (Continued)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package speciﬁcations do not expand the terms of Fairchild’s worldwide terms and conditions,

speciﬁcally the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/

Note:

1. All dimensions are in millimeters.

2. Dimensions are exclusive of burrs, mold fash, and tie bar extrusion.

Surface Mount – 0.4" Lead Spacing (Option TS)

(1.54)

(1.78)

(9.96)

(0.76)

(2.54)

(13.00)

Recommended Land Pattern

(Option S)

10.16

0.20–0.40

0.40 MIN

Both sides

12.60 MAX

7.62 TYP

9.40–9.91

1.50

ø1.00 TYP

6.35–6.86

5.08

MAX

(0.78)

2.54 TYP

3.68–3.94 1.14–1.78

0.51 MIN

FOD3184 Rev. 1.0.4 19

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Ordering Information

Marking Information

Part Number Package Packing Method

FOD3184 DIP 8-Pin Tube (50 units per tube)

FOD3184S SMT 8-Pin (Lead Bend) Tube (50 units per tube)

FOD3184SD SMT 8-Pin (Lead Bend) Tape and Reel (1,000 units per reel)

FOD3184V DIP 8-Pin, DIN EN/IEC 60747-5-2 option Tube (50 units per tube)

FOD3184SV SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option Tube (50 units per tube)

FOD3184SDV SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option Tape and Reel (1,000 units per reel)

FOD3184TV DIP 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option Tube (50 units per tube)

FOD3184TSV SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option Tube (50 units per tube)

FOD3184TSR2V SMT 8-Pin, 0.4” Lead Spacing, DIN EN/IEC 60747-5-2 option Tape and Reel (700 units per reel)

1

2

6

43 5

Deﬁnitions

1Fairchild logo

2Device number

3 VDE mark (Note: Only appears on parts ordered with DIN

EN/IEC 60747-5-2 option – See order entry table)

4Two digit year code, e.g., ‘11’

5Two digit work week ranging from ‘01’ to ‘53’

6 Assembly package code

3184

BYY

XXV

FOD3184 Rev. 1.0.4 20

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Carrier Tape Specifications – Option S

Symbol Description Dimension in mm

WTape Width 16.0 ± 0.3

tTape Thickness 0.30 ± 0.05

P0Sprocket Hole Pitch 4.0 ± 0.1

D0Sprocket Hole Diameter 1.55 ± 0.05

E Sprocket Hole Location 1.75 ± 0.10

FPocket Location 7.5 ± 0.1

P22.0 ± 0.1

PPocket Pitch 12.0 ± 0.1

A0Pocket Dimensions 10.30 ±0.20

B010.30 ±0.20

K04.90 ±0.20

W1Cover Tape Width 13.2 ± 0.2

dCover Tape Thickness 0.1 max

Max. Component Rotation or Tilt 10°

R Min. Bending Radius 30

d

0

P

t2

D0

1

W

User Direction of Feed

0

K

B0

A0W

E

D

F

P

FOD3184 Rev. 1.0.4 21

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Carrier Tape Specifications – Option TS

Symbol Description Dimension in mm

WTape Width 24.0 ± 0.3

tTape Thickness 0.40 ± 0.1

P0Sprocket Hole Pitch 4.0 ± 0.1

D0Sprocket Hole Diameter 1.55 ± 0.05

E Sprocket Hole Location 1.75 ± 0.10

FPocket Location 11.5 ± 0.1

P22.0 ± 0.1

PPocket Pitch 16.0 ± 0.1

A0Pocket Dimensions 12.80 ± 0.1

B010.35 ± 0.1

K05.7 ±0.1

W1Cover Tape Width 21.0 ± 0.1

dCover Tape Thickness 0.1 max

Max. Component Rotation or Tilt 10°

R Min. Bending Radius 30

d

0

P

t2

D0

1

W

User Direction of Feed

0

K

B0

A0W

E

D

F

P

FOD3184 Rev. 1.0.4 22

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

Reﬂow Proﬁle

Proﬁle Freature Pb-Free Assembly Proﬁle

Temperature Min. (Tsmin) 150°C

Temperature Max. (Tsmax) 200°C

Time (tS) from (Tsmin to Tsmax) 60–120 seconds

Ramp-up Rate (tL to tP) 3°C/second max.

Liquidous Temperature (TL) 217°C

Time (tL) Maintained Above (TL) 60–150 seconds

Peak Body Package Temperature 260°C +0°C / –5°C

Time (tP) within 5°C of 260°C 30 seconds

Ramp-down Rate (TP to TL) 6°C/second max.

Time 25°C to Peak Temperature 8 minutes max.

Time (seconds)

Temperature (°C)

Time 25°C to Peak

260

240

220

200

180

160

140

120

100

80

60

40

20

0

TL

ts

tL

tP

TP

Tsmax

Tsmin

120

Preheat Area

Max. Ramp-up Rate = 3°C/S

Max. Ramp-down Rate = 6°C/S

240 360

FOD3184 Rev. 1.0.4 23

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,andis not

intended to be an exhaustive list of all such trademarks.

AccuPower™

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

DEUXPEED®

Dual Cool™

EcoSPARK®

EfficientMax™

ESBC™

®

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FETBench™

FlashWriter®*

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MicroPak2™

MillerDrive™

MotionMax™

Motion-SPM™

OptoHiT™

OPTOLOGIC®

OPTOPLANAR®

®

PDP SPM™

Power-SPM™

PowerTrench

®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world,1mW/W/kWatatime™

SignalWise™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET®

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS®

SyncFET™

Sync-Lock™

®*

ThePower Franchise

®

TheRight Technology for Your Success™

TinyBoost™

TinyBuck™

TinyCalc™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

TRUECURRENT™*

µSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR

CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicalandproduct information.

Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide

any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I51

FOD3184 — 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler

PRELIMINARY INFORMATION