Philips Semiconductors Product specification PNP general purpose transistors BC559; BC560 FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. oa NPN complements: BC 549 and BC550. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector MAM281 Fig.1 Simplified outline (TO-92; SOT54) 3 1 and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vose collector-base voltage open emitter BC559 - -30 Vv BC560 - ~50 Vv VcEo collector-emitter voltage open base BC559 - ~30 Vv BC560 ~ -45 Vv lom peak collector current - ~200 mA Prot total power dissipation Tamb < 25 C - 500 mW Nee DC current gain Io = -2 MA; Vog = -5 V 125 800 fr transition frequency lo =-10 MA; Voge = 5 V; f = 100 MHz 100 ~ MHz 1997 Jun 03 277Philips Semiconductors Product specification PNP general purpose transistors BC559; BC560 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Veso collector-base voltage open emitter BC559 - -30 Vv BC560 - -50 Vv Vceo collector-emitter voltage open base BC559 - -30 v BC560 - ~45 v Veso emitter-base voltage open collector - - v Ie collector current (DC) - -100 mA lom peak collector current - 200 mA lam peak base current - -200 mA Prot total power dissipation Tamb < 25 C ~ 500 mw Tstg storage temperature -65 +150 C T junction temperature = 150 C Tamb operating ambient temperature -65 +150 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Pin pa thermal resistance from junction to ambient | note 1 250 KAV Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT lepo collector cut-off current le = 0; Veg = -30 V - -1 -15 |nA le = 0; Vog = -30 V; Tj = 150 C - - -4 HA lEBo emitter cut-off current Io = 0; Veg = -5 V - - -100 | nA Nee DC current gain lo = -2 MA; Vee = -5 V; 125 | - 800 see Figs 2, 3 and 4 hee DC current gain lo =-2 MA; Voge = -5 V; BCS559A see Figs 2, 3 and 4 125 |- 250 BC559B; BC560B 220 |- 475 BC559C; BC560C 420 |- 800 Voesat collector-emitter saturation voltage | I> = -10 mA; fp = -0.5 mA - -60 |-300 ;mvV Ic = -100 mA; Ip = -5 MA - -180 |-650 | mV VBeEsat base-emitter saturation voltage Io = ~10 mA; Ip = -0.5 mA; note 1 - ~-750 |- mV Io = -100 mA; Ip = -5 mA; note 1 - -930 | - mV 1997 Jun 03 278Philips Semiconductors Product specification PNP general purpose transistors BC559; BC560 SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Vee base-emitter voltage Ic = -2 MA; Vce = -5 V; note 2 -~600 |-650 |-750 | mV Io = -10 MA; Voge = 5 V; note 2 ~ ~ ~820 | mV Ce collector capacitance le =i, = 0; Vog = -10 V; f = 1 MHz - 4 - pF fr transition frequency le = -10 MA; Vcp =-5 V; f= 100 MHz|100 | - - MHz F noise figure Io = -200 WA; Vee = -5 V; Rg = 2 kf; BC559A; BCS60A f = 30 Hz to 15.7 kHz ~ - 10 |B BC559B; BCS560B; - - 4 dB BC559C; BC560C F noise figure Io = -200 A: Vcg = -5 V; Rg = 2 k22; BC5S59A; BC5S60A f= 1 KHz, B = 200 Hz - - 10 =| aB BC5598; BC560B; - - 4 dB BC559C; BC560C Notes 1. Vpesat decreases by about -1.7 mV/K with increasing temperature. 2. Vee decreases by about -2 mV/K with increasing temperature. 300 MBH726 | hee ' T 200 + ! t : ' 1 T ' Lt Voge =-5V : . | I WN | 100 L 1 | { N L | 4 | Hl TLL ET | 1 YY LL UL | Sonn 0 | i i -1077 -1 ~10 -102 Ig (ma) -103 BC559A. Fig.2 DC current gain; typical values. 1997 Jun 03 279Philips Semiconductors Product specification PNP general purpose transistors BC559; BC560 400 300 200 100 0 -108 -1071 A ~10 BCS559B; BCSE0B. Fig.3 DC current gain; typical values. MBH727 Ig. (ma) 108 600 rE 500 400 300 200 100 0 -1972 -1071 1 -10 B559C; BCS60C. Fig.4 DC current gain; typical values. MBH728 Ig (mA) -108 1997 Jun 03 280