®
1/6
Table 1: Main Features
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500VRMS), complying
with UL standards (file ref: E81734).
Symbol Value Unit
IT(RMS) 50 A
VDRM/VRRM 600 to 1200 V
IGT 80 mA
BTW67 and BTW69 Series
50A SCRS
REV. 5February 2006
STANDARD
Table 2: Order Codes
Part Numbers Marking
BTW67-xxx BTW67xxx
BTW69-xxxRG BTW69xxx
A
K
G
K
A
G
A
K
G
RD91
(BTW67)
TOP3 Ins.
(BTW69)
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180° conduction angle)
RD91 Tc = 70°C 50 A
TOP3 Ins. Tc = 75°C
IT(AV) Average on-state current
(180° conduction angle)
RD91 Tc = 70°C 32 A
TOP3 Ins. Tc = 75°C
ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C 610 A
tp = 10 ms 580
I²tI
²t Value for fusing Tj = 25°C 1680 A2S
dI/dt Critical rate of rise of on-state current IG = 2
x IGT , tr 100 ns F = 60 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 8A
PG(AV) Average gate power dissipation Tj = 125°C 1W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125 °C
VRGM Maximum peak reverse gate voltage 5 V
BTW67 and BTW69 Series
2/6
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Table 5: Thermal resistance
Symbol Test Conditions Value Unit
IGT VD = 12 V RL = 33
MIN. 8 mA
MAX. 80
VGT MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kTj = 125°C MIN. 0.2 V
IHIT = 500 mA Gate open MAX. 150 mA
ILIG = 1.2 x IGT MAX. 200 mA
dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs
VTM ITM = 100 A tp = 380 µs Tj = 25°C MAX. 1.9 V
Vt0 Threshold voltage Tj = 125°C MAX. 1.0 V
RdDynamic resistance Tj = 125°C MAX. 8.5 m
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
MAX.
10 µA
Tj = 125°C 5mA
Symbol Parameter Value Unit
Rth(j-c) Junction to case (D.C.) RD91 (Insulated) 1.0 °C/W
TOP3 Insulated 0.9
Rth(j-a) Junction to ambient (D.C.) TOP3 Insulated 50 °C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and D.C. on-state current
versus case temperature
0 5 10 15 20 25 30 35
0
5
10
15
20
25
30
35
40
45
50
55
P(W)
I (A)
T(AV)
α= 180°
360°
α
0 25 50 75 100 125
0
10
20
30
40
50
60
I (A)
T(AV)
T (°C)
case
α= 180°
D.C.
BTW69
BTW69
BTW67
BTW67
BTW67 and BTW69 Series
3/6
Figure 3: Relative variation of thermal
impedance versus pulse duration
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
Figure 7: On-state characteristics (maximum
values)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
K=[Z /R
th th
]
t (s)
p
Zth(j-c)
Zth(j-a)
BTW69
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
T (°C)
j
I,I,I[T] /
GT H L j
I ,I ,I [T =25°C]
GT H L j
IGT
IH& IL
1 10 100 1000
0
50
100
150
200
250
300
350
400
450
500
550
600
I (A)
TSM
Number of cycles
Non repetitive
T initial=25°C
j
Repetitive
T =75°C
C
t =10ms
p
One cycle
0.01 0.10 1.00 10.00
100
1000
5000
I (A), I t (A s)
TSM 22
t (ms)
p
I t
2
ITSM
T initial = 25°C
j
dI/dt limitation
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
600
I (A)
TM
V (V)
TM
Tj=max
T =25°C
j
V =1.0V
R =8.5m
T max.:
j
t0
d
BTW67 and BTW69 Series
4/6
Figure 8: Ordering Information Scheme
Table 6: Product Selector
Figure 9: RD91 Package Mechanical Data
BTW 69 - 600 RG
Standard SCR series
Voltage
Packing mode
Type
67 = 50A in RD91
69 = 50A in TOP3
600 = 600V
800 = 800V
1200 = 1200V
RG = Tube
Blanck = Bulk
Part Numbers Voltage (xxx) Sensitivity Package
600 V 800 V 1200 V
BTW67-xxx X X X 80 mA RD91
BTW69-xxx X X X 80 mA TOP3 Ins.
A
E3
N2 N1
B
F
I
A1
B1
L1
A2
L2
B2
C
C2 C1
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 40.00 1.575
A1 29.90 30.30 1.177 1.193
A2 22.00 0.867
B 27.00 1.063
B1 13.50 16.50 0.531 0.650
B2 24.00 0.945
C 14.00 0.551
C1 3.50 0.138
C2 1.95 3.00 0.077 0.118
E3 0.70 0.90 0.027 0.035
F 4.00 4.50 0.157 0.177
I 11.20 13.60 0.441 0.535
L1 3.10 3.50 0.122 0.138
L2 1.70 1.90 0.067 0.075
N1 33° 43° 3 43°
N2 28° 38° 2 38°
BTW67 and BTW69 Series
5/6
Figure 10: TOP3 Insulated Package Mechanical Data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
R
H
K
G
F
E
D
B
A
C
JJ
P
ØL
Table 7: Ordering Information
Ordering type Marking Package Weight Base qty Delivery mode
BTW67-xxx BTW67xxx RD91 20 g 25 Bulk
BTW69-xxxRG BTW69xxx TOP3 Ins. 4.5 g 30 Tube
Note: xxx = voltage
Table 8: Revision History
Date Revision Description of Changes
Apr-2001 4A Last update.
13-Feb-2006 5 TOP3 Insulated delivery mode changed from bulk to tube.
ECOPACK statement added.
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.4 4.6 0.173 0.181
B 1.45 1.55 0.057 0.061
C 14.35 15.60 0.565 0.614
D 0.5 0.7 0.020 0.028
E 2.7 2.9 0.106 0.114
F 15.8 16.5 0.622 0.650
G 20.4 21.1 0.815 0.831
H 15.1 15.5 0.594 0.610
J 5.4 5.65 0.213 0.222
K 3.4 3.65 0.134 0.144
ØL 4.08 4.17 0.161 0.164
P 1.20 1.40 0.047 0.055
R 4.60 0.181
BTW67 and BTW69 Series
6/6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com