DIL serge SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking PACKAGE OUTLINE DETAILS BC856 = 3D ALL DIMENSIONS IN mm BC856A = 3A BC856B = 3B BC857 = 3H 3.0 BC857A = 3E 2.8 BC857B = 3F 0.48 0.14 BC857C = 3G | 0.58 Wee BC858 = 3M i{s O20 BC858A = 3J f 7 a BC858B = 3K 26 | oe er BC858C = 3L 2.4 | ~P 12 RO.1 | Pin configuration 1 i 2 | (004) R0.05 1 = BASE LJ 2} 2 = EMITTER cn | 0.12 | (002) 3= COLLECTOR "0.89 0.02 |". 4. 2 ge! Lege si 2 ABSOLUTE MAXIMUM RATINGS BC856_BC857 BC858 Collector-emitter voltage (+VpR = 1 V) -VcEX max. 80 50 30 V Collector-emitter voltage (open base) -VcEQ max. 65 45 30 V Collector current (peak value) -Icm = Max. 200 mA Total power dissipation up to Tamb = 60 C Ptot max. 250 mW Junction temperature Tj max. 150 C Small-signal current gain -Ic = 2 mA;-Vcg =5 V;f=1 kHz hfe 75 to 900 Transition frequency at f = 100 MHz : -Ic = 10 mA; ~-Vcg =5 V fr > 100 MHz Noise figure at Rg = 2 kQ -Ic = 200 pA; -VcE=5 V f = 1 kHz; B = 200 Hz F < 10 aB 29CDIL BC856 BC857 BC858 RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collectorbase voltage (open emitter) Collector-emitter voltage (+Vpg = 1 V) Collector~emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Collector current (peak value) Emitter current (peak value) Base current (peak value} Total power dissipation up to Tamb; 60 C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = Px (Reh j-t + Rth ts + Rth s-a) * Tamb Thermal resistance From junction to tab From tab to soldering points From soldering points to ambient CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current Tp = 0; -Vcp = 30V; Tj = 25C Tj = 150C Baseemitter voltage -Ic =2mA;-VcgR=5V -Ic = 10 mA; -Vcg=5 V Saturation voltages ~-Ic = 10 mA; -Ip = 0,5 mA -Ic = 100 mA; -Ip = 5 mA Knee voltage -Ic = 10 mA; -Ip = value for which -Ic = 11 mA at -Vcg =1V 30 -VcBo -VCEX -VCEO ~VEBO -Ic -IcmM Tem ~IBM Ptot Tstg yj Rth jt Rth t-s Rth s-a -IcBO -IcBO -VBE -VBE -VCEsat ~VBEsat ~VCEsat -VBEsat -VCEK max. max. max. max. max. max. max. max. max. max. typ. typ. typ. typ. typ. typ. BC856 BC857 BC858 80 80 65 50 50 45 5 100 200 200 200 250 30 30 30 5 -55 to +150 150 60 280 90 15 650 600 to 750 820 75 300 700 250 650 850 250 600 mV mV mV mV mV mV mV mV Vv Vv Vv Vv mA mA mA mA mW C C K/w K/W nA pA mV mV mVDIL BC856 BC857 BC858 Collector capacitance at f = 1 MHz Ig = Ie = 0; -Vcp = 10 V Ce typ. 4,5 pF Transition frequency at f ~ 100 MHz -Ic = 10 mA; -VcE =5 V fr > 100 MHz Small-signa! current gain at f = 1 kHz ~Ic = 2 mA;-Vcge=5V hee 125 to 800 Noise figure at Rg = 2 kQ -Ic = 200 pA; -VcE=5 V f = 1 kHz; B = 200 Hz F typ. 2 dB < 10 dB D.C. current gain ~-Ic = 2 mA; -Vcg =5 V BC856/857 BC858 hFE 125 to 800 BC856A/857A/858A. HEE 125 to 250 BC856B/857B/858B hfe 220 to 475 BC857C /858C hgE 420 to 800 31