MMBT3904
MMBT3904
NPN Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage NPN
Version 2010-04-14
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
MMBT3904
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 40 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 60 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6 V
Power dissipation – Verlustleistung Ptot 350 mW 1)
Collector current – Kollektorstrom (dc) IC200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.1 mA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
hFE
hFE
hFE
hFE
hFE
40
80
100
60
30
300
h-Parameters at/bei VCE = 10 V, IC = 1 mA, f = 1 kHz
Small signal current gain – Kleinsignal-Stromverstärkung hfe 100 400
Input impedance – Eingangs-Impedanz hie 1 kΩ 10 kΩ
Output admittance – Ausgangs-Leitwert hoe 1 µS 40 µS
Reverse voltage transfer ratio – Spannungsrückwirkung hre 0.5*10-4 8*10-4
1 Valid, if leads are kept at ambient temperature
Gültig, wenn die Anschlüsse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
2.5 max
1.3
±0.1
1.1
0.4
2.9
±0.1
1 2
3
Type
Code
1.9
MMBT3904
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
VCEsat
0.2 V
0.3 V
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VBEsat
VBEsat
0.65 V
0.85 V
0.95 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCE = 30 V, VEB = 3 V ICBX 50 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 30 V, - VEB = 3 V IEBV –- 50 nA
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 20 V, f = 100 MHz fT300 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 5 V, IE = ie = 0, f = 1 MHz CCBO 4 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO 8 pf
Noise figure – Rauschzahl
VCE = 5 V, IC = 1 µA, RG = 1 kΩ, f = 1 kHz F 5 dB
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
VCC = 3 V, VBE = 0.5 V
IC = 10 mA, IB1 = 1mA
td 35 ns
tr 35 ns
storage time
fall time
VCC = 3 V, IC = 10 mA,
IB1 = IB2 = 1 mA
ts 200 ns
tf 50 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 357 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren MMBT3906
Marking - Stempelung MMBT3904 = 1AM or 1E
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Valid, if leads are kept at ambient temperature
Gültig, wenn die Anschlüsse auf Umgebungstemperatur gehalten werden
2http://www.diotec.com/ © Diotec Semiconductor AG