AUIRF9Z34N
HEXFET® Power MOSFET
PD - 97627A
06/21/11
G
D
S
Gate
Drain
Source
TO-220AB
AUIRF9Z34N
S
D
G
D
Features
lAdvanced Planar Technology
lP-Channel MOSFET
lDynamic dV/dT Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified*
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
S
D
G
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com 1
V
(BR)DSS
-55V
R
DS(on)
max. 0.10Ω
I
D
-19A
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
g
––– 2.2
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
-5.0
6.8
180
-10
68
0.45
± 20
Max.
-19
-14
-68
-55 to + 175
300
10 lbf
y
in (1.1N
y
m)
AUTOMOTIVE GRADE
AUIRF9Z34N
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.6mH, RG = 25Ω, IAS = -10A. (See Figure 12)
ISD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Rθ is measured at TJ approximately 90°C.
S
D
G
S
D
G
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
0.05
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.10
Ω
V
GS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
gfs
Forward Transconductance
4.2
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
-25
μA
–––
–––
-250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
–––
35
Q
gs
Gate-to-Source Charge
–––
–––
79
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
–––
16
t
d(on)
Turn-On Delay Time
–––
13
–––
t
r
Rise Time
–––
55
–––
t
d(off)
Turn-Off Delay Time
–––
30
–––
ns
t
f
Fall Time
–––
41
–––
L
D
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
–––
620
–––
C
oss
Output Capacitance
–––
280
–––
pF
C
rss
Reverse Transfer Capacitance
–––
140
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
–––
–––
-19
(Body Diode) A
I
SM
Pulsed Source Current
–––
–––
-68
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
-1.6
V
t
rr
Reverse Recovery Time
–––
54
82
ns
Q
rr
Reverse Recovery Charge
–––
110
160
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
TJ = 25°C, IF = -10A
di/dt = 100A/μs
f
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -10A
f
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
V
DD
= -28V
I
D
= -10A
R
G
= 13
Ω
TJ = 25°C, IS = -10A, VGS = 0V
f
showing the
integral reverse
p-n junction diode.
Conditions
R
D
= 2.6
Ω,
See Fig. 10
f
V
GS
= 0V
Conditions
V
DS
= -25V, I
D
= -10A
I
D
= -10A
V
DS
= -44V
V
GS
= 20V
V
GS
= -20V
V
GS
= -10V, See Fig. 6 & 13
f
AUIRF9Z34N
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
Qualification Information
†
TO-220 N/A
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M3 (+/- 250V)
†††
AEC-Q101-002
Human Body Model Class H1B (+/- 800V)
†††
AEC-Q101-001
AUIRF9Z34N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10 100
D
DS
20μs PULSE WIDTH
T = 25°C
c
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
1
10
100
0.1 1 10 100
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-4.5V
20μs PULSE WIDTH
T = 175°C
C
1
10
100
45678910
T = 25°C
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -25V
20μs PULSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -17A
D
AUIRF9Z34N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
0 10203040
G
GS
A
-V , Gate-to-Source Voltage (V)
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -10A
V = -44V
V = -28V
D
DS
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1000
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10ms
A
-I , Drain Current (A)
-V , Drain-to-Source Voltage (V)
DS
D
10μs
100μs
1ms
T = 25°C
T = 175°C
Single Pulse
C
J
0
200
400
600
800
1000
1200
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
AUIRF9Z34N
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
5
10
15
20
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
AUIRF9Z34N
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. VDS
ID
IG
-3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(
BR
)
DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
0
100
200
300
400
500
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP -4.2A
-7.2A
BOTTOM -10A
D
AUIRF9Z34N
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
AUIRF9Z34N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUIRF9Z34N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRF9Z34N
Ordering Information
Base part
number
Package Type Standard Pack Complete Part Number
Form
Quantity
AUIRF9Z34N
TO-220
Tube
50
AUIRF9Z34N
AUIRF9Z34N
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AUIRF9Z34N