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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDC2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. * 1.1 A, 200 V. Applications * High power and current handling capability RDS(ON) = 725 m @ VGS = 10 V * High performance trench technology for extremely low RDS(ON) * Fast switching speed * DC/DC converter * Low gate charge (8nC typical) D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage 20 V ID Drain Current (Note 1a) 1.1 A PD Maximum Power Dissipation (Note 1a) 1.6 (Note 1b) 0.8 - Continuous - Pulsed TJ, TSTG 4 Operating and Storage Junction Temperature Range W -55 to +150 C (Note 1a) 78 C/W (Note 1) 30 C/W Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .262 FDC2612 7'' 8mm 3000 units 2002 Fairchild Semiconductor Corporation FDC2612 Rev B3 (W) FDC2612 February 2002 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 A 200 V BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1 A IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V , VDS = 0 V -100 nA 4.5 V On Characteristics VGS(th) VGS(th) TJ VGS = 0 V, ID = 250 A, Referenced to 25C mV/C (Note 2) ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C ID(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On Resistance On-State Drain Current VGS = 10 V, ID = 1.1 A VGS = 10 V, ID = 1.1 A, TJ = 125C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10 V, RDS(on) 246 2 4 -8.7 605 1133 mV/C 725 1430 m 4 ID = 1.1 A A 4.4 S Dynamic Characteristics VDS = 100 V, f = 1.0 MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time V GS = 0 V, 234 pF 18 pF 8 pF (Note 2) VDD = 100 V, VGS = 10 V, ID = 1 A, RGEN = 6 6 12 ns 6 12 ns ns td(off) Turn-Off Delay Time 17 30 tf Turn-Off Fall Time 8 16 ns Qg Total Gate Charge 8 11 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 100 V, VGS = 10 V ID = 1.1 A, 1.6 nC 2.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A(Note 2) Voltage Diode Reverse Recovery Time IF = 1.1A, (Note 2) diF/dt = 300 A/s Diode Reverse Recovery Charge 1.3 0.8 1.2 74.5 194 A V nS nC Notes: 1.RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 1in2 pad of 2 oz copper b) 156C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDC2612 Rev B3(W) FDC2612 Electrical Characteristics FDC2612 Typical Characteristics 1.4 VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 6.0V ID, DRAIN CURRENT (A) 6.5V 3 5.5V 2 1 1.3 VGS = 4.0V 1.2 4.5V 1.1 0 10V 1 2 4 6 8 0 10 1 2 3 4 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.6 1.5 ID = 0.6A ID = 1.1A VGS =10V 2.2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6.0V 0.9 0 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 125 1.3 1.1 TA = 125oC 0.9 0.7 TA = 25oC 0.5 150 4 o 5 TJ, JUNCTION TEMPERATURE ( C) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 IS, REVERSE DRAIN CURRENT (A) 8 VDS = 25V ID, DRAIN CURRENT (A) 5.0V 6 4 TA = 125oC 2 25oC -55oC VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 7 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC2612 Rev B3(W) 350 ID = 1.1A 100V VDS = 50V CISS 150V 9 6 250 200 150 100 COSS 3 50 CRSS 0 0 0 2 4 6 8 10 0 25 Qg, GATE CHARGE (nC) 50 100 125 150 Figure 8. Capacitance Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 40 100s RDS(ON) LIMIT 1ms 1 10ms 100ms 0.1 DC 1s VGS = 10V SINGLE PULSE RJA = 156oC/W 0.01 o TA = 25 C 0.001 0.1 1 10 100 1000 SINGLE PULSE RJA = 156C/W TA = 25C 30 20 10 0 0.001 0.01 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 75 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 300 12 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 15 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 156C/W 0.2 0.1 P(pk) 0.1 t1 0.05 0.02 0.01 0.01 0.0001 0.001 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC2612 Rev B3(W) FDC2612 Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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