OTOROLA sEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz. + Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40% intermodulation Distortion @ 150 W (PEP) IMO = 30 dB (Min) 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR MAXIMUM RATINGS MRF422 150 W (PEP), 30 MHz" RF POWER TRANSISTORS NPN SILICON CASE 211-11, STYLE 1 Rating Symboi Value Unit Callector-Emitter Voltage VcEO 40 Vde Callector-Base Voitage VcoBo a5 Vde Emitter~Base Voltage VEBO 3.0 Vde Collector Current Continuous Ic 20 Ade Withstanding Current 10 5 _ 30 Adc Tatal Device Dissipation @ Te = 25C Pp 290 Watts Derate above 25C 1.66 wre Storage Temperature Range Tstg 65 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rajc 0.6 C/W ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) { Characteristic | Symbol | Min Typ i Max | Unit | OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Ic = 200 mAdc, Ig = 0) ViBRICEO 35 _- Vde CollectorEmitter Breakdown Valtage (Ic = 100 mAdc, Vag = 0) ViBR)CES as _ _ Vde Coliector-Base Breakdown Voltage (I = 100 mAdc, Ie = 0) ViBR)CBO 85 _ _ Vde Emitter-Base Breakdawn Valtage (ig = 10 mAde, I = 0) V(BR)EBO 3.0 _ _ Vde Collector Cutoff Current (Voge = 28 Vde, Vag = 0, Tc = 25C) Ices _ _ 20 mAde (continued) REV 5 MOTOROLA RF DEVICE DATA MRF422 2-501ELECTRICAL CHARACTERISTICS continued (Tc = 25C unless otherwise noted.) | Symbo! Min [ Typ | Max L Unit [ Characteristic ON CHARACTERISTICS OC Current Gain (Ic = 5.0 Ade, Veg = 5.0 Vde) AEE 15 30 120 DYNAMIC CHARACTERISTICS Output Capacitance (Vcg = 28 Vde, le = 0, f = 1.0 MHz} Cod ~ 420 _ pF FUNCTIONAL TESTS Cammon-Emiter Amplifier Power Gain ~ (Voc = 28 Vde, Poy = 150 W (PEP), I(max) = 6.7 Ade, leq = 150 mAdc, f = 30, 30.001 MHz) d8 Collector Efficiency (Voc = 28 Vde, Pout = 150 W (PEP), Ic(max) = 6.7 Adc, loq = 150 mAdc, f = 30, 30.001 MHz) Yo intermodulation Distortan (1) (VE = 28 Vde, Poyt = 150 W (PEP), Ic = 6.7 Ade, log = 150 mAdc, f = 30, 30.001 MHz) (Mo _ -33 -30 d8 Output Power (VCE = 28 Vde, f = 30 MHz) Pout 150 ~ _ Waits (PEP) NOTE: 1. To Mil-Std-1311 Version A, Test Method 2204, Two To =C7 Li ne, Reference each Tone. wN 28 Vde N 35 *e (1 OUT. C1, C2, C3, CS 170~680 pF, ARCO 469 C4 80-480 pF, ARCO 466 C6, C8, Ci1 ERIE 0.1 uF, 100 V C7 MALLORY 500 uF, 15 V Electrolytic C9 UNDERWOOD 1000 pF, 350 V C10 10 nF 50 V Electrolytic R110Q 25 Watt Wire Waund R2 10 1.0 Watt Carbon CR1~ 1N4997 + Lt 3 Turns, #16 Wire, 5/16 (.D., 5/16 Long 12 10 pH Molded Choke L3a 12 Turns, #16 Enameled Wire, Close Wound, 1/4 Dia. L4 5 Turns, 1/8 Copper Tubing L5 10 Ferrite Beads FERROXCUBE #56~590-65/38 Figure 1. 30 MHz Test Circuit Schematic MRF422 2-502 MOTOROLA RF DEVICE DATAVoc = 28V leq = 150 mA TWO TONE TEST. 5 nm oa a {= 30, 36 001 MHz & 8 8 & Poup. OUTPUT POWER (WATTS PEP} 4 6 3 10 Pin, INPUT POWER (WATTS PEP) Figure 2. Output Power versus Input Power 280 IMO = 30 dB icq =25 mA f = 30, 30.001 MHz 240 f ff fj) b+ Lt 1 120 a0 Pout. OUTPUT POWER (WATTS PEP} 20 a4 Voc, SUPPLY VOLTAGE (VOLTS) 28 32 Figure 4. Linear Output Power versus Supply Voitage ic. COLLECTOR CURRENT {AMP) 1 2 5 10 20 50 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Safe Operating Area dre Gpg, POWER GAIN (dB) Voc =28V icq = 180 mA Pout = 150 W PEP 3 5 7 10 f, FREQUENCY (MHz) 1520 30 Figure 3. Power Gain versus Frequency log = 150 mA f = 30, 30.001 MHz ORDER 5TH ORDER IMD, INTERMODULATION DISTORTION (dB) 4g 80 120 Payt OUTPUT POWER {WATTS PEP) 160 200 Figure 5. Intermadulation Distortion versus Output Power Pout = 150 W PEP < FREQUENCY Zn MHz Ohms 2 4,90 ~ [1.54 7 2.10 ~ 0.93 15 1.32 -}0.38 30 0.81 -j0.26 Figure 7. Series Input Impedance. _ ATA MOTOROLA RF DEVICE DATA MRF422 2-503iw 5 aa RESISTANCE (OHMS) nm Roy. 2ARALLEL EQUIVALENT OUTPUT an CAPACITANCE (pF) ra leg = 150 mA Pout = 150 W PEP log = 150 mA Pout = 150 W PEP Cout. PARALLEL EQUIVALENT OUTPUT Q G 15 2 3 5 7 10 15 20 30 1S 2 3 ? 19 15 20 30 t, FREQUENCY (MHz} f, FREQUENCY (MHz) Figure 8, Output Resistance versus Frequency Figure 9. Output Capacitance versus Frequency MRF422 MOTOROLA RF DEVICE DATA G 2-504