
KA5X02XX-SERIES
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
Pulse tes t: Pulse wid th ≤ 300µS, duty cycle ≤ 2%
Parameter Symbol Condition Min. Typ. Max. Unit
KA5x0265xRx
Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 650 - - V
Zero gate voltage drain current IDSS VDS=Max. Rating, VGS=0V - - 50 µA
VDS=0.8Max. Rating,
VGS=0V, TC=125°C- - 200 µA
Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A - 5.0 6.0 Ω
Forward transconductance (note) gfs VDS=50V, ID=0.5A 1.5 2.5 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 550 - pFOutput capacitance Coss - 38 -
Reverse transfer capacitance Crss - 17 -
Turn on delay time td(on) VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-20-
nS
Rise time tr - 15 -
Turn off delay time td(off) - 55 -
Fall time tf - 25 -
Total gate charge
(gate-source+gate-drain) Qg VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
--35
nC
Gate-source charge Qgs - 3 -
Gate-drain (M iller) charge Qgd - 12 -
KA5x0280R
Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 800 - - V
Zero gate voltage drain current IDSS VDS=Max. Rating, VGS=0V - - 50 µA
VDS=0.8Max. Rating,
VGS=0V, TC=125°C- - 200 µA
Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A - 5.6 7.0 Ω
Forward transconductance (note) gfs VDS=50V, ID=0.5A 1.5 2.5 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 250 - pFOutput capacitance Coss - 52 -
Reverse transfer capacitance Crss - 25 -
Turn on delay time td(on) VDD=0.5BVDSS, ID=1.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
-21-
nS
Rise time tr - 28 -
Turn off delay time td(off) - 77 -
Fall time tf - 24 -
Total gate charge
(gate-source+gate-drain) Qg VGS=10V, ID=1.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
--60
nC
Gate-source charge Qgs - 15 -
Gate-drain (M iller) charge Qgd - 20 -
S1
R
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