G E SOLID STATE on ve f3a7sos1 oo1zan o : 3875081 G E SOLID STATE O1E 17396 pm 35-94% General-Purpose Power Transistors T3719 he 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 File Number 413 Silicon N-P-N and P-N-P Epitaxial-Base Complementary-Symmetry Transistors General-Purpose Types for Switching and Linear-Amplifier Applications Features: Low saturation voltages 8 Maximum sate-area-of-operation curves High gain at high current High breakdown voltages RCA-2N5781, 2N5782, and 2N5783 are epitaxial-base silicon p-n-p transistors -- complements of the silicon n-p-n types TERMINAL DESIGNATIONS 2N5784, 2N5785, and 2N5786, respectively. The three types in each family differ primarily in voltage ratings and saturation characteristics. These transistors are intended for medium-power switching E C (case) and complementary-symmetry audio amplifier applications. All types are supplied In the JEDEC TO-205AD package. 9208-27512 * Formerly RGA Dev, Typs TA7270, TA7271, TA7272, JEDEC TO-205AD TA7289, TA7290, and TA7291 respectively. MAXIMUM RATINGS, Absolute-Maximum Values: PNP 2N5781 =2N5782 ~=-_2N5783 N-P-N =. 2N5784 2N5785 2N5786 *COLLECTOR-TO-BASE VOLTAGE..... Pence neve rene raee Veso 80 65 45 Vv COLLECTOR-TO-EMITTER SUSTAINING VOLTAGE: * With external base-to-emitter resistance (Roc) = 100 oo. cece cece eee cece eee eens Vogp(sus) 80 65 45 Vv With base open... 0... cece eee cee ere eens Voeolsus) 65 50 40 Vv *EMITTER-TO-BASE VOLTAGE. ........ 00.00 cee ee sees Vepo 5 5 35 v *CONTINUOUS COLLECTOR CURRENT.......0c00ceeeeues ied 3.5 3.5 3.5 A *CONTINUOUS BASE CURRENT ...... ccc ccereeveecenes 'p 1 1 1 A *TRANSISTOR DISSIPATION: PS At case temperatures up to DEO Lecce eee ece cece eaeeeee 10 10 10 Ww At ambient temperatures up to QWBC i eecscccesecseuceues 1 1 1 WwW At case temperatures above 25C owe... secu Derate linearly 0.057 wiC, or see Fig. 7. At ambient temperatures above 28C Fenereene Derate linearly 0.0057 wre *TEMPERATURE RANGE: Starage and operating (Junction) 60... ec cee eee cere tenes --65 to +200 - c *LEAD TEMPERATURE (During soldering): At distance 2 1/32 in. (0.8 mm) from seating plane for TOS max, oo certectcrcesccvccusuteeveuceceuave 239 _- c *\In accordance with JEDEC registration data format JS-6 RDF-2. # For p-n-p devices, voltage and current values are negative.G E SOLID STATE o2 pe Qaazsoa, oo1zas7 2 3875081 G E SOLID STATE O1 17397 #2O 27-3819 te General-Purpose Power Transis' 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 ELECTRICAL CHARACTERISTICS, At Case Temperature (T cj = 25C unless otherwise specified Tv . A y LD TEST CONDITIONS LIMITS CHARACTERISTIC SYMBOL | VOLTAGE CURRENT! 2N5781 2N6784 UNITS Vde Adc p-n-p Vpn . Vee | Yee | tc fig | Min. | Max. | Min. | Max. i Collector Cutoff Current: With external base-to-emitter 65 - ~10 - 10 HA resistance (Rag) = 100 2 lceR At To = 150C 65 - -1 - 1 mA * With base-emitter junction reverse- biased and external base-to-emitter . ~75 1.5 - -10 - - uA resistance (Rge) = 10092 75 -1.5 ~ - - 10 IcEX ~75 1.5 - -1 - - *l At To = 160C : A c 75 | -15 - - - |i * With base open IcEO 50 Q - 100 - 100 HA *| Emitter Cutoff Current Epo ~ 0 ~ -10 - 10 HA *! DC Forward-Current Transfer h 2 a 20 100 20 100 Ratio FE 2 3.28 4 - 4 - *! Collector-to-Emitter Sustaining Voltage (see Figs, 2 and 3): Vceolsus) 0.18] 0 |85b - 65b - Vv With base open With external base-to-emitter a gQ9 _ b - resistance (Rge) = 100 2 Vcer|sus) 0.4 Be 80 *| Base-to-Emitter Voltage Vee 2 a -~ -1.5 - 15). V : *| Collector-to-Emitter Saturation Voltage (measured 0.25 in Vecelsat) 1 | O41) = -0.5 - 05 Vv (6.35 mm) from case) *} Magnitude of Common-Emitter, Small-Signal, Short-Circuit, Forward-Current Transfer Ratiod Ihtel f=4 MHz 2 0.1 2 15 - ~- f = 200 kHz 2 0.1 5 20 *} Common-Emitter, Small-Signal, . Short-Circuit, Forward-Current hee 2 0.1 25 - 25 - Transfer Ratio (f = 1 kHz) Saturated Switching Time (Voc = 30 V, Igy = Iga): ton 1 |-0.1) 0.8 - - Turn-on (tg + t,) 1 0.1] - - 5 ps Turn-off t -1 |-0.1] - 2.5 - - . (ty + tp) OFF 1 | oa] - - | 16 Thermal Resistance: Rose _ 175 _ 178 - Junction-to-case ciw Junction-to-ambient Resa - 175 - 175 * In accordance with JEDEC registration data format JS-6 RDF-2. * For p-n-p devices, voltage and current values are negative. 4 Pulsed, pulse duration = 300 ys, duty factor = 1.8% Lead resistance is critical in this test. b CAUTION: Sustaining voltages Vegeolsusl, and VogRtisus) d Measured at a frequency where |htel is decreasing MUST NOT be measured on a curve tracer. at approximately 6 dB per octave. TTS 401G E SOLID STATE Ou Def) zazsoax ooizasa 4 | 3875081 GE SOLID STATE oie i7308 po TSS General-Purpose Power lransistors T37-17 07 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 ELECTRICAL CHARACTERISTICS, At Case Temperature ( Tcl = 25C unless otherwise specified TEST CONDITIONS LIMITS CHARACTERISTIC SYMBOL | VOLTAGE CURRENT; 2N5782 2N5785 UNITS Vide Adc p-n-p n-p-n Vee Vee le [lg |Min. Max. | Min. Max, Collector Cutoff Current: With external base-to-emitter 50 - ~10 - 10 BA resistance (Rae) = 100.2 IceR At Tc = 160C 50 ~ -1 - 1 mA * With base-emitter junction reverse- biased and external base-to-emitter ~60 1.5 - ~10 - _ BA resistance (Rge) = 100 2 . 60 -1.5 - - - 10 ICEX ~60 1.5 - -1 - - * = . At Te = 150C so | -15 ~ a ~ 44 mA * With base open IcEO 35 0 - ~-100 | 100 BA *| Emitter Cutoff Current leRO -5 | 0 - |-10 | - | to BA * 1 DC Forward-Current Transfer h 2 1,28 20 100 20 100 Ratio FE 2 3.24 4 - 4 ]ce * | Collector-to-Emitter Sustaining Voltage (see Figs. 2 and 3): Vegolsus! 0.12)0 |-sob} sob] - With base open V With external base-to-emitter a b b resistance (Ra) = 100.2 Voer(sus] of ery 65 * | Base-to-Emitter Voltage Vee 2 1,28 - -1.5 - 1.5 v * | Collector-to-Emitter Saturation Voltage (measured 0.25 in Veglsat) 1.28/0.12] -0.75] - 0.75 Vv (6.35 mm) from case) 3.29/08 | - -2 - 2 * | Magnitude of Common-Emitter, Smail-Signal, Short-Circuit, Forward-Current Transfer Ratiod [re f=4MHz -2 -0.1 2 15 - ~- f = 200 kHz 2 0.1 - ~ 5 20 * | Common-Emitter, Small-Signal, Short-Circuit, Forward-Current hte 2 0.1 25 - 25 ~- Transfer Ratio (f = 1 kHz) Saturated Switching Time (Vg = 30 V, Ip1 = pad: Turn-on ton 1 {-0.4) 0.5 - - (tg +t 1] O41] - - ~ 5 at ty) us Turn-off t i |-0.4] - 2.5 - - - (ty + te} OFF 1 a1] - - - 15 Thermal Resistance: . Junction-to-case Rac 8 | = 78 | ecw Junction-to-ambient Raja - 175 - 175 * In accordance with JEDEC registration data format JS-6 RDF-2. * For p-n-p devices, voltage and current values are 4 Pulsed, pulse duration = 300 us, duty factor = 1.8%. negative. 5 CAUTION: Sustaining voltages Voeolsus), and Vogptsus} Lead resistance is critical in this test. MUST NOT be measured on a curve tracer. d Measured at a frequency where [hfo| is decreasing at approximately 6 dB per octave. 402G E SOLID STATE o1 pe sa7zsoa1 00173949 & 7 3875081 GE SOLID STATE = OE 17399 0 7-35-19 he General-Purpose Power Transistors 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C unless otherwise specified , TT 4 i) ~| ") TEST CONDITIONS LIMITS , . CHARACTERISTIC SYMBOL | VOLTAGE CURRENT; 2N5783 2N5786 UNITS Vdc Adc prep n-p-n Voce Vee le Ig Min. Max. Min. Max, Collector Cutoff Current: With external base-to-emitter 40 - -10 _ 10 BAT, resistance (Rge} = 100 2 ICER [ At Tc = 150C 40 - -1 - 1 mA * With base-emitter junction reverse- biased and externa! base-to-emitter 45 1.5 - -10 - - A resistance (Rgg) = 100 & 45 | -1.5 - - - | 1 B Icex 45 1.5 - -1 - - mA At Te = 150C as | 15 _ _ _ ty * With base open loeo 25 0 - ~100 - 100 uA . * | Emitter Cutoff Current tepo -3.5 | 0 - -10 - 10 uA a * | DC Forward-Current Transfer h 2 1.68 20 100) 20 400 Ratio FE 2 3.28 4{ 4 - * | Collector-to-Emitter Sustaining Valtage {see Figs. 2 and 3): Vogolsus) 018j0 |-40P} - | 4ob - With base open Vv With external base-to-emitter a b b resistance (Rag) = 100 & Voer(sus) 0.1 ary | ee * | Base-to-Emitter Voltage VBE 2 1.63 _ -15 - 15 Vv * | Collector-to-Emitter Saturation Voltage (measured Voglsat) 1.69}0.16] - ~-1 - 1 Vv 0,26 in {6,35 mm} from case) 3.24/08 | -2 - 2 * | Magnitude of Common-Emitter, Small-Signal, Short-Circuit, Forward-Current Transfer Ratio | |hgo| f= 4 MHz 2 -0.1 2 15 - - : f = 200 kHz 2 0.1 - -- 5 20 * | Common-Emitter, Small-Signal, Short-Circuit, Forward-Current | hee 2 0.1 26 - 25 - Transfer Ratio (f = 1 kHz) Saturated Switching Time (Vac = 30 NV, IB1 = Iga): Turn-on ton 1 |-0.1) - 0.5 - - (tg+t,) 1 a1) - - - 5 ps Turn-off t -1 |-0.1] 2.6 - ~ . (t, + t) OFF 1 | O41) - - - 16 Thermal Resistance : Junction-to-case Rasc 17.6), - 17.6 "c/w Junction-to-ambient Raga - 175 - 175 * In accordance with JEDEC registration data format JS-6 RDF-2. * For p-n-p devices, voltage and current values are negative. 4 Pulsed, pulse duration = 300 us, duty factor = 1.8%. Lead resistance is critical in this test. b CAUTION: Sustaining voltages Veoeolsusi, and VceR(sus} d Measured at a frequency where [hte] is decreasing at . MUST NOT be measured on a curve tracer. approximately 6 dB per octave. _ 403G E SOLID STATE OL de fsa7sos, oorzyoo 9s os 3875081 G E SOLID STATE - O1E 17400 oO 7SS"/9 os General-Purpose Power fransistors : a aa e , 13-19 : 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 CASE TEMPERATURE (Tc) * 26C -8] (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE ) -6 -4 -3.5 COLLECTOR VEO (MAX) = = 40 V (2N5783 -0,.2 pre FOR SINGLE Vceo (MAX.) 50 V (2N5762) NON-REPETITIVE PULSE Vceo (MAX.) = ~65 V (2N576l) I -2 -4 -6 -Ff -i0 -2 4 -6 -8 -IO COLLECTOR-TO-EMITTER VOLTAGE (Vor) -V . 9208-23943 Fig. 1 Maximum operating areas for types 2N5781, 2N5782, and 2N57&3. ec To tev < 1 & Zz tc Ic rocco VERT, 5 YcEgtsus? Yoer(sus) : 1 & 63 | 0 2 AB SC A 8 \C 80s 1 OSCILLOSCOPE 3 onp, |HPUT 3 Lowi _}- + |HEWLETT.PACKARD S 46 Wes VCE 0 aS 6S &0 Yee CHOPPER TYPE WODEL No. 1308, MERCURY RELAY OR EQUIVALENT COLLECTOR-TO-EMITTER VOLTAGE {cey?- PS B Jue 81308, . SS 186tHT CLARE 1028, OR EQUIVALENT *FOR TYPES 2N5781, 2N5782, AND 2NS783, THE VALUES FOR Ic AND Veg ARE NEGATIVE, Yeeotws) The sustaining softages Vcggisus} ond VeER(sus) are nea ~Vee* acceptable when the trace lails to the right and above OAAA o point ''A (2N5S783 & 2N5S786), *B" (2N5782 & 2N5785), or "C" (2N5781& 2NS784). YcerR(ses) 7 FOR PNP TYPES 2NS781, 2HS782, & 245783, 928s 3862h2 REVERSE POLARITY OF Voc. Fig. 2 ~ Circuit used to measure sustaining voltages Vegofsus) Fig. 3 Oscilloscope display for measurement of sustaining voltages. and Vogalsusl. {Test circuit shown in Fig. 2). 404& is UNE GE SOLID STATE 01 de ffsersoar oo1z4o1 0 FO 3875081 GE SOLID STATE = O1E 17401 D0 T~3S-/9 General-Purpose Power Transistors 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 GASE TEMPERATURE (Tc) = 25C TT: a9- (7 8 (CURVES MUST BE DERATED LINEARLY NORMALIZED WITH INCREASE IN TEMPERATURE) POWER 6 MULTI GOLLECTOR CURRENT (I)-A (MAX,) 40 V (2N5786 (MAX.) =50 V (2N5785) NOW-REPETITIVE (MAX,) = 65 V (2N5784 PULSE I 2 4 6 8 10 2 4 6 8 100 COLLECTOR-TO-EMITTER VOLTAGE (Vog) -V l 92CS~ 23944 Fig. 4 Maximum operating areas tor types 2N&784, 2N5785, and 2N5786. Veattav Vect -30V (NPUT: OUTPUT TO HEWLETT-PACKARD OSCILLOSCOPE MODEL No. 2144 OR TEKTRONIX MODEL wz EQUIVALENT . No.543A OR ag EQUIVALENT ae Vv 25yF a = a c = ausra2 * w f . 2N5783 oa . INPUT FROM . : 1 PULSE GENERATOR & = _- - (PULSE DURATIONS = = ey see art be curpur 2Ops:REP, RATE+ os taf | tsp: WAVE FORM 2hke} *ADJUST Rg FOR Ipg AND Re FOR Ic 42 TURN-ON>- --| OFF Igy AND Igy HEASURED WITH TEKTRONIX CURRENT PROBE 37 TIME TIME P6019 AND TYPE 134 AMPLIFIER, OR EQUIVALENT 92C5 -18619 For N-P.N types 2N5784, 2NS785, & 2NS786, reverse direction of lay and Vea ond reverse polarity of Vag and cc. 92CS -1I5S6I8RI Fig. & Circuit used to measure saturated switching times. Fig. 6 Oscilloscope display for measurement of switching times. (Test circuit shown in Fig. ). 405G E SOLID STATE 01 de ffse7soa1 ooi7yo2 2 GO | 3875081 G E SOLID STATE General-Purpose Power Transistors O1E 17402 OD T3519 acen 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 l TAGE APPLIES ONLY TO THE DISSIPATION. PORTION ANO Isyy-LIMITED PORTION WAXIMUM-OPERATING-AREA CURVES (FIGS. 2, 00 NOT DERATE THE SPECIFIED VALUES 1g HAX. (CONTINUOUS). 3 $8 re wo 890 <> Eo aa ge uo ow a & or o< Ske 2 Nz us vs Lv 28 Er e< ~~ oe PERCENTAGE OF MAXIMLEM DISSIPATION 6 50 100 150 a0 EFFECTIVE CASE TEMPERATURE OR CASE TEMPERATURE (Terr) OR (Te) - C 9285 SRIRZ Fig. 7 Dissipation derating curve for all types. GASE TEMPERATURE (Tc) * 25C Ig)" ~Ia2*Ol Ig CASE TEMPERATURE (Te) 25C Igy - Igy * 0.1 te 8 Tag 8 SWITCHING TIME - pe ~ o o SWITCHING TIME ns %, ie TURN.ON TIRE ( - 7 ad 3.5 0 0.5 1.0 us 20 25 3.0 COLLECTOR CURRENT (Ig) A COLLECTOR CURRENT (ic) -A sean 9268-23945 Fig. 8 Typical saturated switching characteristics for types 2N5781, Fig. 9 ~ Typical saturated switching characteristics for types 2N5784, 2N5782, and 2N5783, 2N5785, and 2N5786. t} COLLECTOR-TO-EwtTTER VOLTAGE (Vc_)= -2 TO-EKITTER VOLTAGE (cR) 2V [CASE TEMPERATURE (Yc) 25C TEMPERATURE (Tc) = 25C z 6 ai a I t = = it g g 8 8 mw a et = z a 2 Zz 5 E o 3 z z z & & - 10 4 6 6.100 z 4 6 8. 1000 100 4 6 8 1000 COLLECTOR CURRENT {lc} - mA COLLECTOR CURRENT (I}~mA 9285 4913 arse 2 Fig. 10 Typical gain-bandwidth product for types 2N5781, Fig. 11 Typical gain-bandwidth product tor types 2N5784, 2N5782, and 2N783. 2N5785, and 2N5786. 406athe G E SOLID STATE on de fsa7soa, oorzyo3 y 3875081 GE SOLID STATE 01e 17403 0 J S14 \aeneral-rurpose Power Transistors 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 7 INDUCTANCE {L} = ~ ZS *) =| ) BASE-ENITTER REMSTANCE s1000 \ - . GASE TEMPERATURE (Tc) = 25C INDUCTANCE (L} 40nH SASE-EWITTER RESISTANCE (Rpg) = 100 ' & z a 3 w o z u cg a a o Mw < w o PEAK COLLECTOR CURRENT A 0 -1 =2 -3 -4 -5 BASE-TO-EMITTER VOLTAGE (Ype}- a2ss4is BASE-TO-EWITTER VOLTAGE (YpE}~ SSAHE Fig. 12 Reverse-bias second-breakdown characteristics for types Fig. 13 Revarse-bias second-breakdown characteristics for types 2N5781, 2N5782, and 2N5783. 2N5784, 2N5785, and 2N5786. a COLLECTOR-TO-EMITTER VOLTAGE (Veg) = = 2V COLLECTOR-TO-EMITTER VOLTAGE (Veg) + 2 COLLECTOR CURRENT (Ic) -mA & TEMPERATURE < t 2 r z G < e 3 G g d a o 0 -0,2 -0.4 ~08 ~0.8 -10 0 0,2 0.4 BASE-TO-EMITTER VOLTAGE (Yge)- BASE-TO-EWITTER VOLTAGE (Vge)- 9285490 9285416 Fig. 14 ~ Typical transfer characteristics for types 2N5781, Fig. 18 Typical transfer characteristics for types 2N5784, 2N5782, and 2N5783. 2N5785, and 2N5786. COLLECTOR -TO-EMITTER VOLTAGE (Vo_) =-2 COLLECTOR-TO-EMITTER VOLTAGE (Vce} = 2V COLLECTOR CURRENT (I} A COLLECTOR CURRENT (Ic) - -I -l 14 -16 Q 0.4 8 BASE-TO-EMITTER VOLTAGE (Vgp) Vv BASE-TO-EWITTER YOLTAGE (Vgel- 92s-23946 92ss-4316a1 Fig. 16 ~ Typical transfer characteristics for types 2N5781, Fig. 1? Typical transfer characteristics for types 2N5784, 2N5782, and 2N5783. 2N5785, and 2N5786. 407G E SOLID STATE 01 deff sa7soa1 ooz4oy & O1E 17404 0 TH RSEH9 7 39-097 3875081G E SOLID STATE General-Purpose Power Transistors 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 : COLLECTOR = TO ~EMITTER VOLTAGE (Veehe-2V : TO-EWITTER VOLTAGE (Vee) * 2 a CASE TURE(T) 180C 2 s * 3 s OC FORWARD-CURRENT TRANSFER RATIO (hee) tw mm & 9 e <q aw wd w y 2 a m4 EF bk z w im 2 3 i 4 = & ing y a O01 =O. a =Ic 0.01 2 4 6 toy 2 4 6 O16 2 44499 COLLECTOR CURREN - T(Ig) A COLLECTOR CURRENT {ic)- A sasano 92S-23947 Fig. 18 ~ Typical de beta characteristics for type 2N57&1. Fig. 19 Typical de beta characteristics for type 2N5784. | a| COLLECTOR - TO- EMITTER VOLTAGE (Vee)? -2 COLLECTOR-TO-EWITTER VOLTAGE (Ycg) =2 8 4 TURE (Teltisote 2 25c ~65C OC FORWARD-CURRENT TRANSFER RATIO (hee) OC FORWARD-CURRENT TRANSFER RATIO (heeE) -001 -0.1 ee -10 6.01 wl aoe bo |) COLLECTOR CURRENT (Ec}A COLLECTOR CURRENT Itc)-A aenn 92C8- 239496 Fig. 20 Typical dc beta characteristics for type 2N5782. Fig. 21 Typical de beta characteristics for type 2N5785. COLLECTOR -TO-EMITTER VOLTAGE (Vop)*-2 V TO-EMITTER VOLTAGE (Vee) = ~ 25e0 s OC FORWARD-CURRENT TRANSFER RATIO (hee) Ss DC FORWARD -CURRENT TRANSFER RATIO (hee) -6.01 -0.1 =I ~10 0.01 0.4 10 0 COLLECTOR CURRENT (Ic) =A COLLECTOR CURRENT (Ic) ~ A . 9208-23949 mess at Fig, 22 Typical de beta characteristics for type 2N5783. Fig. 23 Typical de beta characteristics for type 2N5786. 408 _ _- ooG E SOLID STATE O1 DE f3azsoa1 OOLP4OS @ i - 3875081 G E SOLID STATE sie 17408 DO TBS 19 General-Purpose Power Transistors CASE TEMPERATURE (Tele 25C COLLECTOR CURRENT {Ig} A 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 COLLECTOR-TO-EMITTER VOLTAGE (Voge) V 9205-23950 Fig, 24 Typical output characteristics for type 2N5781. ~G6/GASE TEMPERATURE (Tp )*25C COLLECTOR CURRENT (Ig}A COLLECTOR -TO -EMITTER VOLTAGE (Vcr) = V 9208-23951 Fig. 26 Typical output characteristics for type 2N782. ~6/ CASE TEMPERATURE (Tc) 25C a I " a b zz WwW ir 2 oa a 8 oO wl i 8 COLLECTOR= TO-EMITTER VOLTAGE (Vee) V Fig. 28 Typical output characteristics for type 2N5783. 9208-23952 TF Aq-) CASE TEMPERATURE (Te) * 25C COLLECTOR CURRENT (Ic) - A 4 4 COLLECTOR-T0-EdITTER VOLTAGE (Ve) - WUSA Fig. 25 Typical output characteristics for type 2N5784. CASE TEMPERATURE (Tr) * 25C COLLECTOR CURRENT (ic}-A 2 4 6 8 COLLECTOR-TO-EMITTER VOLTAGE (Vcgl- ASA Fig. 27 Typical output characteristics for type 2N5785. TEMPERATURE {Tc} = t5C < t 2 E z a % & 3 % 2 0 o 4 x & 2 4 6 8 COLLECTOR-TO-EMITTER VOLTAGE (c_} - ssa Fig. 29 Typical output characteristics for type 2N5786. 409G E SOLID STATE on ve (fsazsoa. ooizyon oo fF 3875061 GE SOLID STATE . O1 17406 D J-3S-19 General-Purpose Power Transistors T . 2) _ ny a 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 -300] CoLLECTOR-TO-EMITTER VOLTAGE (Vo_l #-2V st ommpenes COLLECTOR-TO-EMITTER VOLTAGE (Yee) = 2V +250 -20013 7 2 E 5 g g BASE CURRENT (Ig) ma -O.8 - 1A BASE~TO-EMITTER VOLTAGE (Vee) _v BASE-YQ-EWITTER VOLTAGE (Vge) - 92cs- 23953 ssrA Fig. 30 Typical input characteristics for type 2N5781. Fig. 31 Typical input characteristics for type 2N5784, COLLECTOR -TO-EMITTER VOLTAGE (Vgl* -2 V COLLECTOR-TO-EMITTER VOLTAGE BASE CURRENT (Ig) mA BASE CURRENT (1g)mA - 8 0 0.2 a4 06 o8 10 12 Ma SASE-TO-EMITTER VOLTAGE (Vge)V BASE-TO-ENITTER VOLTAGE (Ygel - . 92CS~ 23954 wis Fig. 32 Typical input characteristics for type 2N6782. Fig. 33 ~ Typical input characteristics far type 2N5785. COLLECTOR - TO-EMITTER VOLTAGE (Vc) *-2 V COLLECTOR-T0-EMITTER VOLTAGE (cg) = 2 BASE CURRENT {1g) = mA < & 2 a Eb z a e 3 a w a < a 14 BASE~TO~EMITTER VOLTAGE (Vpe} BASE-TO-EMITTER VOLTAGE (Vge}- aysein - 92cs- 23955 Fig. 34 ~ Typical input characteristics for type 2N5783. Fig. 35 Typical input characteristics for type 2N5786.