Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA ! . . . for use as output devices in complementary general-purpose amplifier applications. * High DC Current Gain -- hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc * Monolithic Construction * BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 * BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII III IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATING Symbol BD676 BD676A BD678 BD678A BD680 BD680A BD682 Unit VCEO 45 60 80 100 Vdc Collector-Base Voltage VCB 45 60 80 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 0.1 Adc Total Device Dissipation @ TC = 25 _C Derate above 25 _C PD 40 0.32 Watts W/_C - 55 to + 150 _C Rating Collector-Emitter Voltage Operating and Storage Junction Temperating Range TJ, Tstg THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JC 3.13 _C/W Thermal Resistance, Junction to Case 4.0 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLTS 40 WATTS CASE 77-08 TO-225AA TYPE 50 PD, POWER DISSIPATION (WATTS) 45 40 35 30 25 20 15 10 5.0 0 15 30 45 60 75 90 105 120 135 150 165 TC, CASE TEMPERATURE (C) Figure 1. Power Temperature Derating REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 45 60 80 100 -- -- -- -- Vdc Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) ICEO -- 500 Adc Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO. IE = 0, TC = 100C) ICBO -- -- 0.2 2.0 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO -- 2.0 750 750 -- -- -- -- 2.5 2.8 -- -- 2.5 2.5 1.0 -- OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 50 mAdc, IB = 0) BD676, 676A BD678, 678A BD680, 680A BD682 ON CHARACTERISTICS DC Current Gain(1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) mAdc mAdc hFE BD676, 678, 680, 682 BD676A, 678A, 680A Collector-Emitter Saturation Voltage(1) (IC = 1.5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) Base-Emitter On Voltage(1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) BD678, 680, 682 BD676A, 678A, 680A VCE(sat) VBE(on) BD678, 680, 682 BD676A, 678A, 680A Vdc Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) (1) Pulse Test: Pulse Width 300 s, Duty Cycle hfe -- 2.0%. IC, COLLECTOR CURRENT (AMP) 5.0 2.0 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 1.0 0.5 BONDING WIRE LIMIT THERMAL LIMIT at TC = 25C SECONDARY BREAKDOWN LIMIT 0.2 0.1 0.05 1.0 TC = 25C BD676, 676A BD678, 678A BD680, 680A BD682 2.0 5.0 10 50 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 2. DC Safe Operating Area PNP BD676, 676A BD678, 678A BD680, 680A BD682 COLLECTOR BASE [ 8.0 k [ 120 EMITTER Figure 3. Darlington Circuit Schematic 2 Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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