1/5
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.A
4V Drive Nch + Nch MOSFET
QS8K21
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
Application
Switching
Packaging specifications
Inner circuit
Package Taping
Code TR
Basic ordering unit (pieces) 3000
QS8K21
Absolute maximum ratings (Ta = 25C)
Symbol Limits Unit
Drain-source voltage V
DSS
45 V
Gate-source voltage V
GSS
20 V
Continuous I
D
4A
Pulsed I
DP
12 A
Continuous I
s
1A
Pulsed I
sp
12 A
1.5 W / TOTAL
1.25 W / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg
55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Symbol Limits Unit
83.3 °C / W /TOTAL
100
°
C / W /ELEMENT
*Mounted on a ceramic board.
Type
Source current
(Body Diode)
Drain current
Parameter
Parameter
Channel to Ambient Rth (ch-a)
P
D
Power dissipation
*2
*1
*1
*
TSMT8
(8) (7) (5)(6)
(1) (2) (4)(3)
A
bbreviated symbol : K21
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(8) (7)
(1) (2)
∗2
∗1
(6) (5)
(3) (4)
2/5
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.A
Data Sheet QS8K21
Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Gate-source leakage I
GSS
--
10
AV
GS
=20V, V
DS
=0V
Drain-source breakdown voltage V
(BR)DSS
45 - - V I
D
=1mA, V
GS
=0V
Zero gate voltage drain current I
DSS
--1
AV
DS
=45V, V
GS
=0V
Gate threshold voltage V
GS (th)
1.0 - 2.5 V V
DS
=10V, I
D
=1mA
-3853 I
D
=4A, V
GS
=10V
-4867 I
D
=4A, V
GS
=4.5V
-5375 I
D
=4A, V
GS
=4.0V
Forward transfer admittance l Y
fs
l2 - - SI
D
=4A, V
DS
=10V
Input capacitance C
iss
- 460 - pF V
DS
=10V
Output capacitance C
oss
- 110 - pF V
GS
=0V
Reverse transfer capacitance C
rss
- 55 - pF f=1MHz
Turn-on delay time t
d(on)
-9-nsI
D
=2A, V
DD
25V
Rise time t
r
-25-nsV
GS
=10V
Turn-off delay time t
d(off)
-30-nsR
L
12.5
Fall time t
f
-7-nsR
G
=10
Total gate charge Q
g
-5.4-nCI
D
=4A, V
DD
25V
Gate-source charge Q
gs
-2.0-nCV
GS
=5V R
L
6.3
Gate-drain charge Q
gd
-1.6-nCR
G
=10
*Pulsed
Conditions
m
Parameter
Static drain-source on-state
resistance R
DS (on)
*
*
*
*
*
*
*
*
*
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Forward Voltage V
SD
--1.2VI
s
=4A, V
GS
=0V
*Pulsed
ConditionsParameter
*
3/5
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.A
Data Sheet QS8K21
Electrical characteristics curves
0
1
2
3
4
0 0.2 0.4 0.6 0.8 1
V
GS
= 2.8V
Ta=25°C
Pulsed
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.4V
V
GS
= 3.2V
V
GS
= 3.0V
0.001
0.01
0.1
1
10
11.522.53
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
10
100
1000
0.1 1 10
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
Ta= 25°C
Pulsed
0.01
0.1
1
10
00.511.5
V
GS
=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
1
2
3
4
0246810
Ta=25°C
Pulsed
V
GS
= 2.8V
V
GS
= 10.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.4V
V
GS
= 3.2V
V
GS
= 3.0V
1
10
100
1000
0.1 1 10
V
GS
= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
10
100
1000
0.1 1 10
V
GS
= 10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
1
10
0.01 0.1 1 10
V
DS
= 10V
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
10
100
1000
0.1 1 10
V
GS
= 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.8 Forward Transfer Admittance
vs. Drain Current
DRAIN CURRENT : I
D
[A]
DRAIN-SOURCE VOLTAGE : V
DS
[V]
DRAIN-SOURCE VOLTAGE : V
DS
[V]
DRAIN CURRENT : I
D
[A]
DRAIN CURRENT : I
D
[A]
GATE-SOURCE VOLTAGE : V
GS
[V]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
]
DRAIN-CURRENT : I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(on)[m
]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : I
D
[A]
SOURCE CURRENT : Is [A]
SOURCE-DRAIN VOLTAGE : V
SD
[V]
4/5
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.A
Data Sheet QS8K21
0
50
100
150
051015
Ta=25°C
Pulsed
ID= 4.0A
ID= 2.0A
0
2
4
6
8
10
012345678910
Ta=25°C
VDD= 25V
ID= 4.0A
RG=10
Ω
Pulsed
10
100
1000
0.01 0.1 1 10 100
Ciss
Crss
Ta=25°C
f=1MHz
VGS=0V
Coss
1
10
100
1000
10000
0.01 0.1 1 10
tf
td(on)
td(off)
Ta=25°C
VDD= 25V
VGS=10V
RG=10
Ω
Pulsed
tr
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.12 Dynamic Input Characteristics
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.11 Switching Characteristics
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m
]
GATE-SOURCE VOLTAGE : VGS[V]
SWITCHING TIME : t [ns]
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS [V]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : VDS[V]
CAPACITANCE : C [pF]
5/5
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c 2010 ROHM Co., Ltd. All rights reserved. 2010.02 - Rev.A
Data Sheet QS8K21
Measurement circuits
F
ig.1-1 Switching time measurement circu
it
V
GS
R
G
V
D
S
D.U.T.
I
D
R
L
V
DD
Fig.1-2 Switching waveforms
90%
90% 90
%
10% 10%
50%
10%
50%
V
GS
Pulse width
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
F
ig.2-1 Gate charge measurement circuit
VGS
IG(Const.)
RG
VD
S
D.U.T.
ID
RL
VDD
Fig.2-2 Gate charge waveform
V
G
V
GS
Charge
Qg
Qgs Qgd
R1010
A
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