4V Drive Nch + Nch MOSFET QS8K21 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : K21 Application Switching Inner circuit Packaging specifications Type Package Code Basic ordering unit (pieces) QS8K21 Taping TR 3000 (8) (7) (6) 2 2 1 1 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage VGSS Continuous ID Drain current Pulsed IDP *1 Continuous Is Source current (Body Diode) Pulsed Isp *1 Power dissipation Channel temperature Range of storage temperature PD *2 Tch Tstg Limits 45 20 4 12 1 12 Unit V V A A A A (5) (1) (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain 1.5 W / TOTAL 1.25 W / ELEMENT 150 C 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Channel to Ambient Symbol * Rth (ch-a) Limits Unit 83.3 100 C / W /TOTAL C / W /ELEMENT *Mounted on a ceramic board. www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.02 - Rev.A QS8K21 Data Sheet Electrical characteristics (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Gate-source leakage Symbol Gate threshold voltage Typ. Max. Unit Conditions - - 10 A VGS=20V, VDS=0V 45 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=45V, VGS=0V VGS (th) 1.0 - 2.5 V - 38 53 ID=4A, VGS=10V m ID=4A, VGS=4.5V IGSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current Min. VDS=10V, ID=1mA Static drain-source on-state resistance * RDS (on) - 48 67 - 53 75 Forward transfer admittance l Yfs l* 2 - - S ID=4A, VDS=10V Input capacitance Ciss - 460 - pF VDS=10V ID=4A, VGS=4.0V Output capacitance Coss - 110 - pF VGS=0V Reverse transfer capacitance Crss - 55 - pF f=1MHz Turn-on delay time td(on) * - 9 - ns ID=2A, VDD 25V Rise time Turn-off delay time tr * - 25 - ns VGS=10V td(off) * - 30 - ns RL 12.5 tf * - 7 - ns RG=10 Total gate charge Qg * - 5.4 - nC ID=4A, VDD 25V Gate-source charge Qgs * - 2.0 - nC VGS=5V RL 6.3 Gate-drain charge Qgd * - 1.6 - nC RG=10 Fall time *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) <It is the same ratings for Tr1 and Tr2.> Parameter Forward Voltage Symbol VSD * Min. Typ. Max. - - 1.2 Unit V Conditions Is=4A, VGS=0V *Pulsed www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.02 - Rev.A QS8K21 Data Sheet Electrical characteristics curves 3 VGS= 3.4V VGS= 3.2V VGS= 3.0V 2 VGS= 2.8V 1 0 Ta=25C Pulsed 3 VGS= 2.8V VGS= 10.0V VGS= 4.5V VGS= 4.0V VGS= 3.4V VGS= 3.2V VGS= 3.0V 2 1 0.4 0.6 0.8 1 0 0.1 0.01 2 4 6 8 1 10 1.5 2 2.5 3 Fig.1 Typical Output Characteristics() Fig.2 Typical Output Characteristics() Fig.3 Typical Transfer Characteristics Ta= 25C Pulsed VGS= 4.0V VGS= 4.5V VGS= 10V 1 1 VGS= 10V Pulsed 100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 10 0.1 DRAIN-CURRENT : ID[A] 100 Ta=125C Ta=75C Ta=25C Ta= -25C 1 1 VGS= 4.5V Pulsed 100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0.1 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current() www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 10 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current() 10 VDS= 10V Pulsed 1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 0.01 1 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current() FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= 4.0V Pulsed 0.1 10 1000 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() 10 1 SOURCE CURRENT : Is [A] 10 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] GATE-SOURCE VOLTAGE : VGS[V] 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] Ta= 125C Ta= 75C Ta= 25C Ta= - 25C DRAIN-SOURCE VOLTAGE : VDS[V] 100 1000 1 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 1000 0.2 VDS= 10V Pulsed 0.001 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m] 10 4 Ta=25C Pulsed DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 4 VGS=0V Pulsed 1 Ta=125C Ta=75C Ta=25C Ta=-25C 0.1 0.01 0.1 1 10 0 0.5 1 1.5 DRAIN-CURRENT : ID[A] SOURCE-DRAIN VOLTAGE : VSD [V] Fig.8 Forward Transfer Admittance vs. Drain Current Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 2010.02 - Rev.A 10000 150 Ta=25C Pulsed 100 ID= 2.0A ID= 4.0A 50 Ta=25C VDD= 25V VGS=10V RG=10 Pulsed td(off) 1000 tf 100 td(on) 10 tr 0 1 0 5 10 15 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage GATE-SOURCE VOLTAGE : VGS [V] Data Sheet SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] QS8K21 10 8 6 Ta=25C VDD= 25V ID= 4.0A RG=10 Pulsed 4 2 0 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.11 Switching Characteristics 0 1 2 3 4 5 6 7 8 9 10 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics CAPACITANCE : C [pF] 1000 Ciss 100 Crss Ta=25C f=1MHz VGS=0V Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.02 - Rev.A QS8K21 Data Sheet Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching waveforms Fig.1-1 Switching time measurement circuit VG VGS ID VDS Qg RL VGS D.U.T. IG(Const.) RG Qgs Qgd VDD Charge Fig.2-2 Gate charge waveform Fig.2-1 Gate charge measurement circuit www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2010 ROHM Co., Ltd. All rights reserved. R1010A