ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VDRM =
5500
V
ITGQM =
520
A
ITSM =
3.5×103
A
V(T0) =
2.3
V
rT =
2.3
mΩ
VDC-link
=
3300
V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 06F6010
PRELIMINARY
Doc. No. 5SYA1222-05 Aug 07
• High snubberless turn-off rating
• Optimized for medium frequency (<1 kHz) and
low turn-off losses
• High reliability
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Suitable for series connection (contact factory)
Blocking
Maximum rated values Note 1
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
voltage VDRM Gate Unit energized 5500 V
Permanent DC voltage for
100 FIT failure rate of
RC-GCT
VDC-link Ambient cosmic radiation at sea level
in open air. Gate Unit energized 3300 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state
current IDRM VD = VDRM, Gate Unit energized 20 mA
Mechanical data (see Fig. 20, 21)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Mounting force Fm 14 16 18 kN
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Pole-piece diameter Dp ± 0.1 mm 47 mm
Housing thickness H 26.0 26.5 mm
Weight m 1.01 kg
Surface creepage distance D
s Anode to Gate 33 mm
Air strike distance Da Anode to Gate 13 mm
Length l ± 1.0 mm 296 mm
Height h ± 1.0 mm 47 mm
Width IGCT w ± 1.0 mm 208 mm
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
5SHX 06F6010
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Doc. No. 5SYA1222-05 Aug 07 page 2 of 13
GCT Data
On-state (see Fig. 3 to 6, 23)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Max. average on-state
current IT(AV)M Half sine wave, TC = 85 °C,
Double side cooled 210 A
Max. RMS on-state current I
T(RMS) 340 A
Max. peak non-repetitive
surge on-state current ITSM 3.5×103 A
Limiting load integral I2t
tp = 10 ms, Tj = 115 °C, sine wave
after surge: VD = VR = 0 V 61.3×103 A2s
Max. peak non-repetitive
surge on-state current ITSM 8×103 A
Limiting load integral I2t
tp = 1 ms, Tj = 115 °C, sine wave
after surge: VD = VR = 0 V 32×103 A2s
Critical rate of rise of on-
state current diT/dtcr For higher diT/dt and current lower
than 30 A an external retrigger pulse
is required.
TBD A/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VT IT = 520 A, Tj = 115 °C 3.5 V
Threshold voltage V(T0) 2.3 V
Slope resistance rT Tj = 115 °C
IT = 100...1000 A 2.3 mΩ
Turn-on switching (see Fig. 23, 25)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Critical rate of rise of on-
state current diT/dtcr f = 500 Hz, Tj = 115 °C,
IT = 520 A, VD = 3300 V 190 A/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Turn-on delay time tdon 3 µs
Turn-on delay time status
feedback tdon SF 7 µs
Rise time tr 1 µs
Turn-on energy per pulse Eon
VD = 3300 V, Tj = 115 °C
IT = 520 A, di/dt = VD / Li
Li = 17.5 µH
CCL = 0.5 µF, LCL = 1 µH
0.3 J
Turn-off switching (see Fig. 7, 8, 23, 25)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Max. controllable turn-off
current ITGQM VDM ≤ VDRM, Tj = 115 °C,
VD = 3300 V, RS = 3.5 Ω,
CCL = 0.5 µF, LCL ≤ 1 µH
520 A
Max. controllable turn-off
current ITGQM VDM ≤ VDRM, Tj = 115 °C,
VD = 3900 V, RS = 3.5 Ω,
CCL = 0.5 µF, LCL ≤ 1 µH
260 A
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Turn-off delay time tdoff 6 µs
Turn-off delay time status
feedback tdoff SF 7 µs
Turn-off energy per pulse Eoff
VD = 3300 V, Tj = 115 °C
VDM ≤ VDRM, RS = 3.5 Ω
ITGQ = 520 A, Li = 17.5 µH
CCL = 0.5 µF, LCL = 1 µH,
3 J
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 3 of 13
Diode Data
On-state (see Fig. 9 to 12, 24, 25)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Max. average on-state
current IF(AV)M Half sine wave, TC = 85 °C
110
A
Max. RMS on-state current I
F(RMS)
180
A
Max. peak non-repetitive
surge current IFSM
2.5×103
A
Limiting load integral I2t
tp = 10 ms, Tvj = 115°C, VR = 0 V
31.25×103
A2s
Max. peak non-repetitive
surge current IFSM
8×103
A
Limiting load integral I2t
tp = 1 ms, Tvj = 115°C, VR = 0 V
32×103
A2s
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VF IF = 520 A, Tvj = 115°C 6.3 V
Threshold voltage V(F0) 3.3 V
Slope resistance rF Tvj = 115°C
IF = 100...1000 A 5.8 mΩ
Turn-on (see Fig. 24, 25)
Characteristic values
Parameter Symbol
Conditions min typ max Unit
dIF/dt = 300 A/µs, Tvj = 115°C
80 V Peak forward recovery
voltage VFRM dIF/dt = 1400 A/µs, Tvj = 115°C
250 V
Turn-off (see Fig. 13 to 17, 24, 25)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Max. decay rate of on-state
current di/dtcrit IFM = 520 A, Tvj = 115 °C
VDClink = 3900 V
190 A/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Reverse recovery current IRM
320 A
Reverse recovery charge Qrr
TBD µC
Turn-off energy Err
IFM = 520 A, VDC-Link = 3300 V
-dIF/dt = 190 A/µs, LCL = 1 µH
CCL = 0.5 µF, RS = 3.5 Ω,
Tvj = 115°C, DCL = 5SDF 02D6004
1.3 J
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 4 of 13
Gate Unit Data
Power supply (see Fig. 18, 19)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Gate Unit voltage
(Connector X1) VGIN,RMS
AC square wave amplitude (15 kHz
- 100kHz) or DC voltage. No
galvanic isolation to power circuit.
28 40 V
Min. current needed to power
up the Gate Unit IGIN Min Rectified average current
see application note 5SYA 2031 1.1 A
Gate Unit power consumption
PGIN Max
80 W
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Internal current limitation IGIN Max
Rectified average current limited by
the Gate Unit 7 A
Optical control input/output 2) (see Fig. 23)
Maximum rated values Note 1
Parameter Symbol
Conditions min typ max Unit
Min. on-time ton 40 µs
Min. off-time toff 40 µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Optical input power Pon CS -15 -1 dBm
Optical noise power Poff CS -45 dBm
Optical output power Pon SF -19 -1 dBm
Optical noise power Poff SF
CS: Command signal
SF: Status feedback
Valid for 1mm plastic optical fiber
(POF) -50 dBm
Pulse width threshold tGLITCH Max. pulse width without response 400 ns
External retrigger pulse width
tretrig 600 1100 ns
2) Do not disconnect or connect fiber optic cables while light is on.
Connectors 2) (see Fig. 20 to 22)
Parameter Symbol
Description
Gate Unit power connector X1 AMP: MTA-156, Part Number 641210-5 3)
LWL receiver for command signal CS Avago, Type HFBR-2528 4)
LWL transmitter for status feedback
SF Avago, Type HFBR-1528 4)
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Avago Technologies, www.avagotech.com
Visual feedback (see Fig. 22)
Parameter Symbol
Description Color
Gate OFF LED1 "Light" when GCT is off (green)
Gate ON LED2 "Light" when gate-current is flowing (yellow)
Fault LED3 "Light" when not ready / Failure (red)
Power supply voltage OK LED4 "Light" when power supply is within specified range (green)
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 5 of 13
Thermal
Maximum rated values Note 1
Parameter Symbol Conditions min typ max Unit
Junction operating temperature Tvj 0 115 °C
Storage temperature range Tstg -40 60 °C
Ambient operational temperature Ta 0 60 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction-to-case
of GCT Rth(jc) 40 K/kW
Thermal resistance case-to-
heatsink of GCT Rth(ch)
Double side cooled
Diode not dissipating 16 K/kW
Thermal resistance junction-to-case
of Diode Rth(jc) 53 K/kW
Thermal resistance case-to-
heatsink of Diode Rth(ch)
Double side cooled
GCT not dissipating 17 K/kW
Analytical function for transient thermal
impedance:
GCT
)e-(1R = (t)Z n
1i
t/-
ithJC i
∑
=
τ
i 1 2 3 4
Ri(K/kW)
25.096 9.235 3.727 1.942
τi(s) 0.5619 0.0721 0.0071 0.0020
Diode
i 1 2 3 4
Ri(K/kW)
33.360 12.255 4.854 2.537
τi(s) 0.5623 0.0723 0.0072 0.0020
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time (max. values)
Max. Turn-off current for Lifetime operation
• calculated lifetime of on-board capacitors
20 years
• with slightly forced air cooling (air velocity
> 0.5 m/s)
• strong air cooling allows for increased
ambient temperature
Fig. 2 Max. turn-off current vs. frequency for lifetime
operation
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 6 of 13
GCT Part
Max. on-state characteristic model:
VT25 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for iT = TBD – TBD A
Max. on-state characteristic model:
VT115 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for iT = TBD – TBD A
A25 B25 C25 D25
A115 B115 C115 D115
TBD TBD TBD TBD TBD TBD TBD TBD
2.4 3.2 4.0 4.8
VT [V]
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
IT [A]
Tj = 115°C
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
TBD
TBD
Fig. 5 GCT surge on-state current vs. pulse length,
half-sine wave Fig. 6 GCT surge on-state current vs. number of
pulses, half-sine wave, 10 ms, 50Hz
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 7 of 13
0100 200 300 400 500 600
ITGQ [A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 Tj = 115°C
VD = 3300 V
Eoff [J]
Fig. 7 GCT turn-off energy per pulse vs. turn-off
current Fig. 8 GCT Safe Operating Area
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 8 of 13
Diode Part
Max. on-state characteristic model:
VF25 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IF = TBD – TBD A
Max. on-state characteristic model:
VF115 TTvjTTvjTTvjTvj IDICIBA ⋅++⋅+⋅+= )1ln(
Valid for IT = TBD – TBD A
A25 B25 C25 D25
A115 B115 C115 D115
TBD TBD TBD TBD TBD TBD TBD TBD
345678910
VF [V]
0
200
400
600
800
1000
1200
IF [A]
Tj = 115°C
Fig. 9 Diode on-state voltage characteristics
Fig. 10 Diode on-state voltage characteristics
TBD
TBD
Fig. 11 Diode surge on-state current vs. pulse length,
half-sine wave Fig. 12 Diode surge on-state current vs. number of
pulses, half-sine wave, 10 ms, 50Hz
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 9 of 13
0.0
0.5
1.0
1.5
0100 200 300 400 500 600
IFGQ [A]
Err [J]
VD = 3300V
Tj = 115 °C
-diF/dt = 190 A/
¬s
TBD
Fig. 13 Upper scatter range of diode turn-off energy
per pulse vs. turn-off current Fig. 14 Upper scatter range of diode turn-off energy
per pulse vs decay rate of on-state current
TBD
090 180 270 360 450 540
IFQ [A]
200
240
280
320
Irr [A]
Tj = 115°C
diF/dt = 190 A/µs
VD = 3300 V
Fig. 15 Upper scatter range of diode reverse recovery
charge vs decay rate of on-state current Fig. 16
Upper scatter range of diode reverse recovery
current vs decay rate of on-state current
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 10 of 13
TBD
Fig. 17 Diode Safe Operating Area Fig. 18 Max. Gate Unit input power in chopper mode
TBD
Fig. 19 Burst capability of Gate Unit
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 11 of 13
Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
1) V
GIN (AC or DC+)
2) V
GIN (AC or DC+)
3) Cathode
4) V
GIN (AC or DC-)
5) V
GIN (AC or DC-)
Fig. 21 Detail A: pin out of supply connector X1.
Logic
Monitoring Turn-
Off
Circuit
Turn-
On
Circuit
Gate
Cathode
Internal Supply (No galvanic isolation to power circuit)
Supply (VGIN)
X1
CS
LED1
LED2
LED3
LED4
Rx
Command Signal (Light)
Tx
Status Feedback (Light)
Anode
SF
RC-IGCT
Gate Unit RC-GCT
Fig. 22 Block diagram
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1222-05 Aug 07 page 12 of 13
IT
VDSP
VDM
VD
0.4 ITGQ
Turn-off
tdoff
CS
SF
tdoff SF
CS
tr
IT
ITM
dIT/dt
0.9 VD
0.1 VD
VD
Turn-on
tdon SF
tdon
SF
External
Retrigger pulse
CS
tretrig
SF
VD
ton toff
Fig. 23 General current and voltage waveforms with IGCT-specific symbols
VFR
dIF/dt
IF (t)
IF (t)
VF (t)
tfr tfr (typ) 10 µs
Qrr
IRM
-dIF/dt
VF(t), IF (t)
VF (t)
VR (t)
t
Fig. 24 General current and voltage waveforms with Diode-specific symbols
5SHX 06F6010
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1222-05 Aug 07
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
LCL
Li
RsDUT
GCT - part
LLoad
DUT
Diode - part
CCL
VDC
DCL
Fig. 25 Test circuit
Related documents:
5SYA 2031 Applying IGCT Gate Units
5SYA 2032 Applying IGCTs
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SYA 2046 Failure rates of IGCTs due to cosmic rays
5SYA 2048 Field measurements on High Power Press Pack Semiconductors
5SYA 2051 Voltage ratings of high power semiconductors
5SZK 9107 Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
