© Semiconductor Components Industries, LLC, 2015
May, 2018 − Rev. 4
1Publication Order Number:
NCP45540/D
NCP45540
ecoSWITCHt
Advanced Load Management
Controlled Load Switch with Low RON
The NCP45540 load switch provides a component and
area-reducing solution for efficient power domain switching with
inrush current limit via soft−start. In addition to integrated control
functionality with ultra low on−resistance, this device offers system
safeguards and monitoring via fault protection and power good
signaling. This cost effective solution is ideal for power management
and hot-swap applications requiring low power consumption in a
small footprint.
Features
•Advanced Controller with Charge Pump
•Integrated N-Channel MOSFET with Low RON
•Input Voltage Range 0.5 V to 13.5 V
•Soft-Start via Controlled Slew Rate
•Adjustable Slew Rate Control
•Power Good Signal
•Thermal Shutdown
•Undervoltage Lockout
•Short-Circuit Protection
•Extremely Low Standby Current
•Load Bleed (Quick Discharge)
•This is a Pb−Free Device
Typical Applications
•Portable Electronics and Systems
•Notebook and Tablet Computers
•Telecom, Networking, Medical, and Industrial Equipment
•Set−Top Boxes, Servers, and Gateways
•Hot−Swap Devices and Peripheral Ports
Figure 1. Block Diagram
EN
Bandgap
&
Biases
Charge
Pump
Delay and
Slew Rate
Control
GND BLEED
Thermal,
Undervoltage
&
Short−Circuit
Protection
SR
Control
Logic
PG
VOUT
VIN
VCC
MARKING DIAGRAM
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RON TYP VCC IMAX
7.7 mW3.3 V
20 A
3.3 V
8.0 mW
VIN
1.8 V
5.0 V
PIN CONFIGURATION
(Top View)
See detailed ordering and shipping information on page 12 of
this data sheet.
ORDERING INFORMATION
x = H for NCP45540−H
= L for NCP45540−L
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
9.2 mW3.3 V 12 V
1
EN
GND 4
2
3
12
11
10
9
13: VIN
VOUT
VOUT
VCC
VIN
NCP45
540−x
ALYWG
G
SR NC
58
PG BLEED
67
VOUT
VOUT
DFN12, 3x3
CASE 506CD
1
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2
Table 1. PIN DESCRIPTION
Pin Name Function
1, 13 VIN Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 13
2 EN NCP45540−H − Active−high digital input used to turn on the MOSFET, pin has an internal pull down resistor to
GND
NCP45540−L − Active−low digital input used to turn on the MOSFET, pin has an internal pull up resistor to VCC
3 VCC Supply voltage to controller (3.0 V − 5.5 V)
4 GND Controller ground
5 SR Slew rate adjustment; float if not used
6 PG Active−high, open−drain output that indicates when the gate of the MOSFET is fully driven, external pull up
resistor ≥ 1 kW to an external voltage source required; tie to GND if not used.
7 BLEED Load bleed connection, must be tied to VOUT either directly or through a resistor
≤ 1 kW
8 NC No connect, internally floating but pin may be tied to VOUT
9−12 VOUT Source of MOSFET connected to load
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage Range VCC −0.3 to 6 V
Input Voltage Range VIN −0.3 to 18 V
Output Voltage Range VOUT −0.3 to 18 V
EN Digital Input Range VEN −0.3 to (VCC + 0.3) V
PG Output Voltage Range (Note 1) VPG −0.3 to 6 V
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2) RθJA 30.9 °C/W
Thermal Resistance, Junction−to−Ambient, Steady State (Note 3) RθJA 51.3 °C/W
Thermal Resistance, Junction−to−Case (VIN Paddle) RθJC 3.5 °C/W
Continuous MOSFET Current @ TA = 25°C (Notes 2 and 4) IMAX 20 A
Continuous MOSFET Current @ TA = 25°C (Notes 3 and 4) IMAX 15.5 A
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above TA = 25°C
PD3.24
32.4
W
mW/°C
Total Power Dissipation @ TA = 25°C (Note 3)
Derate above TA = 25°C
PD1.95
19.5
W
mW/°C
Storage Temperature Range TSTG −40 to 150 °C
Lead Temperature, Soldering (10 sec.) TSLD 260 °C
ESD Capability, Human Body Model (Notes 5 and 6) ESDHBM 3.0 kV
ESD Capability, Charged Device Model (Note 5) ESDCDM 1.0 kV
Latch−up Current Immunity (Notes 5 and 6) LU 100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. PG is an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage source.
2. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu.
4. Ensure that the expected operating MOSFET current will not cause the Short−Circuit Protection to turn the MOSFET off undesirably.
5. Tested by the following methods @ TA = 25°C:
ESD Human Body Model tested per JESD22−A114
ESD Charged Device Model per ESD STM5.3.1
Latch−up Current tested per JESD78
6. Rating is for all pins except for VIN and VOUT which are tied to the internal MOSFET’s Drain and Source. Typical MOSFET ESD performance
for VIN and VOUT should be expected and these devices should be treated as ESD sensitive.
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Table 3. OPERATING RANGES
Rating Symbol Min Max Unit
Supply Voltage VCC 3 5.5 V
Input Voltage VIN 0.5 13.5 V
Ground GND 0 V
Ambient Temperature TA−40 85 °C
Junction Temperature TJ−40 125 °C
Table 4. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Conditions (Note 7) Symbol Min Typ Max Unit
MOSFET
On−Resistance VCC = 3.3 V; VIN = 1.8 V RON 7.7 8.9 mW
VCC = 3.3 V; VIN = 5 V 8.0 9.3
VCC = 3.3 V; VIN = 12 V 9.2 12.1
Leakage Current (Note 8) VEN = 0 V; VIN = 13.5 V ILEAK 0.1 1.0 mA
CONTROLLER
Supply Standby Current (Note 9) VEN = 0 V; VCC = 3 V ISTBY 0.65 2.0 mA
VEN = 0 V; VCC = 5.5 V 3.2 4.5
Supply Dynamic Current (Note 10) VEN = VCC = 3 V; VIN = 12 V IDYN 280 400 mA
VEN = VCC = 5.5 V; VIN = 1.8 V 530 750
Bleed Resistance VEN = 0 V; VCC = 3 V RBLEED 86 115 144 W
VEN = 0 V; VCC = 5.5 V 72 97 121
Bleed Pin Leakage Current VEN = VCC = 3 V, VIN = 1.8 V IBLEED 6.0 10 mA
VEN = VCC = 3 V, VIN = 12 V 60 70
EN Input High Voltage VCC = 3 V − 5.5 V VIH 2.0 V
EN Input Low Voltage VCC = 3 V − 5.5 V VIL 0.8 V
EN Input Leakage Current NCP45540−H; VEN = 0 V IIL 90 500 nA
NCP45540−L; VEN = VCC IIH 90 500
EN Pull Down Resistance NCP45540−H RPD 76 100 124 kW
EN Pull Up Resistance NCP45540−L RPU 76 100 124 kW
PG Output Low Voltage (Note 11) VCC = 3 V; ISINK = 5 mA VOL 0.2 V
PG Output Leakage Current (Note 12) VCC = 3 V; VTERM = 3.3 V IOH 5.0 100 nA
Slew Rate Control Constant (Note 13) VCC = 3 V KSR 26 33 40 mA
FAULT PROTECTIONS
Thermal Shutdown Threshold (Note 14) VCC = 3 V − 5.5 V TSDT 145 °C
Thermal Shutdown Hysteresis (Note 14) VCC = 3 V − 5.5 V THYS 20 °C
VIN Undervoltage Lockout Threshold VCC = 3 V VUVLO 0.25 0.35 0.45 V
VIN Undervoltage Lockout Hysteresis VCC = 3 V VHYS 25 40 60 mV
Short−Circuit Protection Threshold VCC = 3 V; VIN = 0.5 V VSC 200 265 350 mV
VCC = 3 V; VIN = 13.5 V 100 285 500
7. VEN shown only for NCP45540−H, (EN Active−High) unless otherwise specified.
8. Average current from VIN to VOUT with MOSFET turned off.
9. Average current from VCC to GND with MOSFET turned off.
10.Average current from VCC to GND after charge up time of MOSFET.
11. PG is an open-drain output that is pulled low when the MOSFET is disabled.
12. PG is an open-drain output that is not driven when the gate of the MOSFET is fully charged, requires an external pull up resistor ≥ 1 kW to
an external voltage source, VTERM.
13.See Applications Information section for details on how to adjust the slew rate.
14.Operation above TJ = 125°C is not guaranteed.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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Table 5. SWITCHING CHARACTERISTICS (TJ = 25°C unless otherwise specified) (Notes 15 and 16)
Parameter Conditions Symbol Min Typ Max Unit
Output Slew Rate VCC = 3.3 V; VIN = 1.8 V SR 11.8 kV/s
VCC = 5.0 V; VIN = 1.8 V 12.0
VCC = 3.3 V; VIN = 12 V 13.3
VCC = 5.0 V; VIN = 12 V 13.5
Output Turn−on Delay VCC = 3.3 V; VIN = 1.8 V TON 200 ms
VCC = 5.0 V; VIN = 1.8 V 170
VCC = 3.3 V; VIN = 12 V 260
VCC = 5.0 V; VIN = 12 V 250
Output Turn−off Delay VCC = 3.3 V; VIN = 1.8 V TOFF 2.0 ms
VCC = 5.0 V; VIN = 1.8 V 1.6
VCC = 3.3 V; VIN = 12 V 0.7
VCC = 5.0 V; VIN = 12 V 0.4
Power Good Turn−on Time VCC = 3.3 V; VIN = 1.8 V TPG,ON 1.02 ms
VCC = 5.0 V; VIN = 1.8 V 0.95
VCC = 3.3 V; VIN = 12 V 1.52
VCC = 5.0 V; VIN = 12 V 1.23
Power Good Turn−off Time VCC = 3.3 V; VIN = 1.8 V TPG,OFF 20 ns
VCC = 5.0 V; VIN = 1.8 V 14
VCC = 3.3 V; VIN = 12 V 20
VCC = 5.0 V; VIN = 12 V 14
15.See below figure for Test Circuit and Timing Diagram.
16.Tested with the following conditions: VTERM = VCC; RPG = 100 kW; RL = 10 W; CL = 0.1 mF.
Figure 2. Switching Characteristics Test Circuit and Timing Diagrams
EN
NCP45540−H
PG
GND
BLEED
OFF ON
SR
10%
90%
DV
Dt
SR = DV
Dt
50% 50%
90%
50% 50%
VCC
VIN VOUT
CL
RL
RPG
VTERM
VPG
VOUT
VEN
TON TOFF
TPG,OFF
TPG,ON
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 3. On−Resistance vs. Input Voltage Figure 4. On−Resistance vs. Temperature
VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
12.510.58.56.54.52.50.5
7.0
7.5
8.0
9.0
10.0
10.5
105754515−15−45
6
7
8
9
10
11
12
13
Figure 5. Supply Standby Current vs. Supply
Voltage
Figure 6. Supply Standby Current vs.
Temperature
VCC, SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
5.55.04.54.03.53.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
105906030150−30−45
0
1
2
3
4
5
6
7
Figure 7. Supply Dynamic Current vs. Input
Voltage
Figure 8. Supply Dynamic Current vs. Supply
Voltage
VIN, INPUT VOLTAGE (V) VCC, SUPPLY VOLTAGE (V)
12.510.58.56.54.52.50.5
150
200
250
300
350
450
500
550
5.55.04.54.03.53.0
150
200
300
350
400
500
550
600
RON, ON−RESISTANCE (mW)
RON, ON−RESISTANCE (mW)
ISTBY
, SUPPLY STANDBY CURRENT (mA)
9.5
VCC = 3 V
VCC = 5.5 V
VIN = 1.8 V
VCC = 3.3 V
VIN = 5.0 V
VIN = 12 V
1200−30 30 60 90
−15 45 75 120
VCC = 3 V
VCC = 5.5 V
ISTBY
, SUPPLY STANDBY CURRENT (mA)
VCC = 3 V
VCC = 5.5 V
400
IDYN, SUPPLY DYNAMIC CURRENT (mA)
VIN = 12 V
IDYN, SUPPLY DYNAMIC CURRENT (mA)
250
450
VIN = 1.8 V
8.5
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 9. Supply Dynamic Current vs.
Temperature
Figure 10. Bleed Resistance vs. Supply
Voltage
TJ, JUNCTION TEMPERATURE (°C) VCC, SUPPLY VOLTAGE (V)
105754515−15−45
200
250
350
400
500
550
650
700
5.55.04.54.03.53.0
95
100
105
110
115
Figure 11. Bleed Resistance vs. Temperature Figure 12. Bleed Pin Leakage Current vs. Input
Voltage
TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V)
105754515−15−45
85
95
105
115
125
135
145
12.510.58.56.54.52.50.5
0
10
20
30
40
50
60
70
Figure 13. Bleed Pin Leakage Current vs.
Temperature
Figure 14. EN Pull Down/Up Resistance vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
105754515−15−45
0
10
20
30
40
60
70
80
105754515−15−45
85
90
95
100
105
110
115
120
IDYN, SUPPLY DYNAMIC CURRENT (mA)
RBLEED, BLEED RESISTANCE (W)
RBLEED, BLEED RESISTANCE (W)
IBLEED, BLEED PIN LEAKAGE
CURRENT (mA)
IBLEED, BLEED PIN LEAKAGE CURRENT (mA)
IPD/PU, EN PULL DOWN/UP RESISTANCE (kW)
300
450
600
VCC = 3.0 V, VIN = 12 V
VCC = 5.5 V, VIN = 1.8 V
VCC = 3 V
VCC = 5.5 V
VCC = 3 V
VCC = 5.5 V
50
VCC = 3 V, VIN = 12 V
VCC = 3 V, VIN = 1.8 V
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 15. PG Output Low Voltage vs. Supply
Voltage
Figure 16. PG Output Low Voltage vs.
Temperature
VCC, SUPPLY VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
5.55.04.54.03.53.0
0.110
0.115
0.120
0.125
0.130
0.135
0.140
105754515−15−45
0.08
0.10
0.12
0.14
0.16
0.18
0.20
Figure 17. Slew Rate Control Constant vs.
Input Voltage
Figure 18. Slew Rate Control Constant vs.
Temperature
VIN, INPUT VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Short−Circuit Protection Threshold
vs. Input Voltage
Figure 20. Output Slew Rate vs. Input Voltage
VIN, INPUT VOLTAGE (V) VIN, INPUT VOLTAGE (V)
12.510.58.56.54.52.50.5
250
260
270
280
290
300
310
320
12.510.58.56.54.52.50.5
9
10
11
12
13
14
VOL, PG OUTPUT LOW VOLTAGE (V)
VOL, PG OUTPUT LOW VOLTAGE (V)
KSR, SLEW RATE CONTROL CONSTANT (mA)
VSC, SHORT−CIRCUIT PROTECTION
THRESHOLD (mV)
SR, OUTPUT SLEW RATE (kV/s)
ISINK = 5 mA
VCC = 3 V
VCC = 5.5 V
KSR, SLEW RATE CONTROL CONSTANT (mA)
VCC = 3 V
VCC = 5.5 V VCC = 3 V
VCC = 5.5 V
ISINK = 5 mA
12.510.58.56.54.52.50.5
28
29
31
32
33
34
36
37
105754515−15−45
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
30
35
VCC = 3 V
VCC = 5.5 V
VCC = 3 V
VCC = 5.5 V
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 21. Output Slew Rate vs. Temperature Figure 22. Output Turn−on Delay vs. Input
Voltage
TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V)
100806040200−20−40
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
12.510.58.56.54.52.50.5
150
170
190
210
230
270
290
Figure 23. Output Turn−on Delay vs.
Temperature
Figure 24. Output Turn−off Delay vs. Input
Voltage
TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V)
100806040200−20−40
150
175
200
225
250
275
12.510.58.56.54.52.50.5
0
0.5
1.5
2.0
2.5
3.0
Figure 25. Output Turn−off Delay vs.
Temperature
Figure 26. Power Good Turn−on Time vs. Input
Voltage
TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V)
100806040200−20−40
0.50
0.75
1.00
1.50
1.75
2.00
12.510.58.56.54.52.50.5
0.8
1.2
2.0
SR, OUTPUT SLEW RATE (kV/s)
TON, OUTPUT TURN−ON DELAY (ms)
TON, OUTPUT TURN−ON DELAY (ms)
TOFF
, OUTPUT TURN−OFF DELAY (ms)
TOFF
, OUTPUT TURN−OFF DELAY (ms)
TPG,ON, PG TURN−ON TIME (ms)
120
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
250
VCC = 3 V
VCC = 5.5 V
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
120
1.0
VCC = 3 V
VCC = 5.5 V
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
120
VCC = 3 V
VCC = 5.5 V
1.0
1.4
1.6
1.25
1.8
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TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Figure 27. Power Good Turn−on Time vs.
Temperature
Figure 28. Power Good Turn−off Time vs.
Supply Voltage
TJ, JUNCTION TEMPERATURE (°C) VCC, SUPPLY VOLTAGE (V)
100806040200−20−40
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.8
5.55.04.54.03.53.0
12
14
16
18
20
22
24
Figure 29. Power Good Turn−off Time vs.
Temperature
TJ, JUNCTION TEMPERATURE (°C)
100806040200−20−40
10
12
14
16
18
22
24
26
TPG,ON, PG TURN−ON TIME (ms)
TPG,OFF
, PG TURN−OFF TIME (ns)
TPG,OFF
, PG TURN−OFF TIME (ns)
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
120
VIN = 0.5 V
VIN = 13.5 V
120
VCC = 3.3 V, VIN = 12 V
VCC = 5 V, VIN = 1.8 V
1.5
1.6
1.7
20
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APPLICATIONS INFORMATION
Enable Control
The NCP45540 has two part numbers, NCP45540−H and
NCP45540−L, that only differ in the polarity of the enable
control.
The NCP45540−H device allows for enabling the
MOSFET in an active−high configuration. When the VCC
supply pin has an adequate voltage applied and the EN pin
is at a logic high level, the MOSFET will be enabled.
Similarly, when the EN pin is at a logic low level, the
MOSFET will be disabled. An internal pull down resistor to
ground on the EN pin ensures that the MOSFET will be
disabled when not being driven.
The NCP45540−L device allows for enabling the
MOSFET in an active−low configuration. When the VCC
supply pin has an adequate voltage applied and the EN pin
is at a logic low level, the MOSFET will be enabled.
Similarly, when the EN pin is at a logic high level, the
MOSFET will be disabled. An internal pull up resistor to
VCC on the EN pin ensures that the MOSFET will be
disabled when not being driven.
Power Sequencing
The NCP45540 devices will function with any power
sequence, but the output turn−on delay performance may
vary from what is specified. To achieve the specified
performance, there are two recommended power sequences:
1. VCC → VIN → VEN
2. VIN → VCC → VEN
Load Bleed (Quick Discharge)
The NCP45540 devices have an internal bleed resistor,
RBLEED, which is used to bleed the charge off of the load to
ground after the MOSFET has been disabled. In series with
the bleed resistor is a bleed switch that is enabled whenever
the MOSFET is disabled. The MOSFET and the bleed
switch are never concurrently active.
It is required that the BLEED pin be connected to VOUT
either directly (as shown in Figure 31) or through an external
resistor, REXT (as shown in Figure 30). REXT should not
exceed 1 kW and can be used to increase the total bleed
resistance.
Care must be taken to ensure that the power dissipated
across RBLEED is kept at a safe level. The maximum
continuous power that can be dissipated across RBLEED is
0.4 W. REXT can be used to decrease the amount of power
dissipated across RBLEED.
Power Good
The NCP45540 devices have a power good output (PG)
that can be used to indicate when the gate of the MOSFET
is fully charged. The PG pin is an active−high, open−drain
output that requires an external pull up resistor, RPG, greater
than or equal to 1 kW to an external voltage source, VTERM,
compatible with input levels of other devices connected to
this pin (as shown in Figures 30 and 31).
The power good output can be used as the enable signal for
other active−high devices in the system (as shown in
Figure 32). This allows for guaranteed by design power
sequencing and reduces the number of enable signals needed
from the system controller. If the power good feature is not
used in the application, the PG pin should be tied to GND.
Slew Rate Control
The NCP45540 devices are equipped with controlled
output slew rate which provides soft start functionality. This
limits the inrush current caused by capacitor charging and
enables these devices to be used in hot swap applications.
The slew rate can be decreased with an external capacitor
added between the SR pin and ground (as shown in
Figures 30 and 31). With an external capacitor present, the
slew rate can be determined by the following equation:
Slew Rate +KSR
CSR
[Vńs] (eq. 1)
where KSR is the specified slew rate control constant, found
in Table 4, and CSR is the slew rate control capacitor added
between the SR pin and ground. The slew rate of the device
will always be the lower of the default slew rate and the
adjusted slew rate. Therefore, if the CSR is not large enough
to decrease the slew rate more than the specified default
value, the slew rate of the device will be the default value.
The SR pin can be left floating if the slew rate does not need
to be decreased.
Short−Circuit Protection
The NCP45540 devices are equipped with short−circuit
protection that is used to help protect the part and the system
from a sudden high−current event, such as the output, VOUT,
being shorted to ground. This circuitry is only active when
the gate of the MOSFET is fully charged.
Once active, the circuitry monitors the difference in the
voltage on the VIN pin and the voltage on the BLEED pin.
In order for the VOUT voltage to be monitored through the
BLEED pin, it is required that the BLEED pin be connected
to VOUT either directly (as shown in Figure 31) or through
a resistor, REXT (as shown in Figure 30), which should not
exceed 1 kW. With the BLEED pin connected to VOUT, the
short−circuit protection is able to monitor the voltage drop
across the MOSFET.
If the voltage drop across the MOSFET is greater than or
equal to the short−circuit protection threshold voltage, the
MOSFET is immediately turned off and the load bleed is
activated. The part remains latched in this off state until EN
is toggled or VCC supply voltage is cycled, at which point the
MOSFET will be turned on in a controlled fashion with the
normal output turn−on delay and slew rate. The current
through the MOSFET that will cause a short−circuit event
can be calculated by dividing the short−circuit protection
threshold by the expected on−resistance of the MOSFET.
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Thermal Shutdown
The thermal shutdown of the NCP45540 devices protects
the part from internally or externally generated excessive
temperatures. This circuitry is disabled when EN is not
active to reduce standby current. When an over−temperature
condition is detected, the MOSFET is immediately turned
off and the load bleed is activated.
The part comes out of thermal shutdown when the
junction temperature decreases to a safe operating
temperature as dictated by the thermal hysteresis. Upon
exiting a thermal shutdown state, and if EN remains active,
the MOSFET will be turned on in a controlled fashion with
the normal output turn−on delay and slew rate.
Undervoltage Lockout
The undervoltage lockout of the NCP45540 devices turns
the MOSFET off and activates the load bleed when the input
voltage, VIN, is less than or equal to the undervoltage
lockout threshold. This circuitry is disabled when EN is not
active to reduce standby current.
If the VIN voltage rises above the undervoltage lockout
threshold, and EN remains active, the MOSFET will be
turned on in a controlled fashion with the normal output
turn−on delay and slew rate.
W
VCC
EN
Bandgap
&
Biases
Charge
Pump
Delay and
Slew Rate
Control
GND
BLEED
VOUT VIN
Thermal,
Undervoltage
&
Short−Circuit
Protection
Control
Logic
PG
Load
Controller
3.0 V − 5.5 V
VTERM = 3.3 V
RPG
Power Supply
or Battery
0.5 V − 13.5 V
SR
CSR
REXT
Figure 30. Typical Application Diagram − Load Switch
100 k
NCP45540
www.onsemi.com
12
VCC
EN
Bandgap
&
Biases
Charge
Pump
Delay and
Slew Rate
Control
GND
BLEED
VOUT VIN
Thermal,
Undervoltage
&
Short−Circuit
Protection
Control
Logic
PG
Load
VTERM
RPG
VCC
3.0 V − 5.5 V EN PG GND VIN
0.5 V − 13.5 V
BACKPLANE
REMOVABLE
CARD
SR
CSR
Figure 31. Typical Application Diagram − Hot Swap
W
PG
VTERM = 3.3 V
RPG
W
PG
NCP45540−H
EN
RPD
W
Controller
PG
PG
NCP45540−H
EN
RPD
Figure 32. Simplified Application Diagram − Power Sequencing with PG Output
10 k
100 k100 k
ORDERING INFORMATION
Device EN Polarity Package Shipping†
NCP45540IMNTWG−HActive−High DFN12
(Pb−Free) 3000 / Tape & Reel
NCP45540IMNTWG−LActive−Low
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ecoSWITCH is a trademark of Semiconductor Components Industries, LLC (SCILLC).
NCP45540
www.onsemi.com
13
PACKAGE DIMENSIONS
DFN12 3x3, 0.5P
CASE 506CD
ISSUE A
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
12X
0.45
3.30
0.50
PITCH
2.10
0.48
2.86
1
DIMENSIONS: MILLIMETERS
0.32
11X
RECOMMENDED
PACKAGE
OUTLINE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÇÇÇ
ÇÇÇ
ÇÇÇ
A
D
E
B
C0.10
PIN ONE
2X
INDICATOR
2X
TOP VIEW
SIDE VIEW
BOTTOM VIEW
A
L
D2
E2
C
C0.10
C0.05
C0.05
NOTE 4 A1 SEATING
PLANE
e
12X
NOTE 3
b12X
DIM MIN MAX
MILLIMETERS
A0.80 1.00
A1 0.00 0.05
b0.20 0.30
D3.00 BSC
D2 2.60 2.80
E3.00 BSC
E2 1.90 2.10
e0.50 BSC
L0.20 0.40
L1 −−− 0.15
16
12 7
A3 0.20 REF
A3
L2
A1 A3
ÇÇ
ÉÉ
ÉÉ
DETAIL B
MOLD CMPD
EXPOSED Cu
ALTERNATE
CONSTRUCTION
L1
DETAIL A
L
ALTERNATE
CONSTRUCTIONS
L
DETAIL B
DETAIL A
e/2
A-B
M
0.10 BC
M
0.05 C
A
M
0.10 BC
A
M
0.10 BC
L2 0.10 REF
K
K0.15 MIN
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NCP45540/D
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