ON Semiconductor BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general-purpose amplifier applications. * High DC Current Gain -- * * hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682 BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 *ON Semiconductor Preferred Device IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII III III IIII III III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII III III IIII III III IIIIIIIII IIII III III IIII III III IIIIIIIII IIII III III IIII III III IIIIIIIII IIII IIIIIIIIII III III III IIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIII IIII IIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIII IIIIIIIIII III IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIII IIII IIIIII III * 4.0 AMPERE DARLINGTON POWER TRANSISTORS NPN SILICON 60, 80, 100 VOLTS 40 WATTS MAXIMUM RATINGS Symbo l BD675 BD675 A BD677 BD677 A BD679 BD679 A BD68 1 Unit VCEO 45 60 80 100 Vdc Collector-Base Voltage VCB 45 60 80 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 0.1 Adc Total Device Dissipation @TC = 25C Derate above 25C PD 40 0.32 Watts W/C Operating and Storage Junction Temperating Range TJ, Tstg -55 to +150 C Rating Collector-Emitter Voltage 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-09 TO-225AA TYPE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JC 3.13 C/W Thermal Resistance, Junction to Case PD, POWER DISSIPATION (WATTS) 50 45 40 35 30 25 20 15 10 5.0 0 15 30 45 60 90 75 105 120 135 150 165 TC, CASE TEMPERATURE (C) Figure 1. Power Temperature Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev.10 1 Publication Order Number: BD675/D BD675 BD675A BD677 BD677A BD679 BD679A BD681 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 45 60 80 100 -- -- -- -- Vdc Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) ICEO -- 500 Adc Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO, IE = 0, TC = 100'C) ICBO -- -- 0.2 2.0 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO -- 2.0 750 750 -- -- -- -- 2.5 2.8 -- -- 2.5 2.5 1.0 -- OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 50 mAdc, IB = 0) BD675, 675A BD677, 677A BD679, 679A BD681 ON CHARACTERISTICS DC Currert Gain(1) (IC = 1.5 Adc,VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) mAdc hFE BD675, 677, 679, 681 BD675A, 677A, 679A Collector-Emitter Saturation Voltage(1) (IC = 1.5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) BD677, 679, 681 BD675A, 677A, 679A Base-Emitter On Voltage(1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3 0 Vdc) BD677, 679, 681 BD675A, 677A, 679A VCE(sat) mAdc -- VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) hfe -- (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. IC, COLLECTOR CURRENT (AMP) 5.0 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 2.0 1.0 0.5 BONDING WIRE LIMIT THERMALLY LIMIT at TC = 25C SECONDARY BREAKDOWN LIMIT 0.2 0.1 0.05 1.0 TC = 25C BD675, 675A BD677, 677A BD679, 679A BD681 20 2.0 5.0 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 2. DC Safe Operating Area http://onsemi.com 2 BD675 BD675A BD677 BD677A BD679 BD679A BD681 COLLECTOR NPN BD675, 675A BD677, 677A BD679, 679A BD681 BASE 8.0 k 120 EMITTER Figure 3. Darlington Circuit Schematic http://onsemi.com 3 BD675 BD675A BD677 BD677A BD679 BD679A BD681 PACKAGE DIMENSIONS TO-225AA CASE 77-09 ISSUE W -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 4 BD675/D