IXTA220N04T2-7 - Zilog - Datasheet.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C40 V

VDGR TJ= 25°C to 175°C, RGS = 1MΩ40 V

VGSM Transient ± 20 V

ID25 TC= 25°C 220 A

ILRMS Lead Current Limit, RMS 160 A

IDM TC= 25°C, pulse width limited by TJM 660 A

IAR TC= 25°C 110 A

EAS TC= 25°C 600 mJ

PDTC= 25°C 360 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6mm (0.062in.) from case for 10s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

Weight 3 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 40 V

VGS(th) VDS = VGS, ID = 250μA 2.0 4.0 V

IGSS VGS = ± 20V, VDS = 0V ±200 nA

IDSS VDS = VDSS 5 μA

VGS = 0V TJ = 150°C 50 μA

RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 2.8 3.5 mΩ

TrenchT2TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA220N04T2-7 VDSS = 40V

ID25 = 220A

RDS(on) ≤≤

≤≤

≤ 3.5mΩΩ

ΩΩ

Ω

DS99962A(11/08)

TO-263 (7-lead)

Pins: 1 - Gate

2, 3 - Source

5,6,7 - Source

TAB (8) - Drain

1

7

(TAB)

Features

zInternational standard package

z175°C Operating Temperature

zHigh current handling capability

zAvalanche Rated

zLow RDS(on)

Advantages

zEasy to mount

zSpace savings

zHigh power density

Applications

•Synchronous Buck Converters

•High Current Switching Power

Supplies

•Battery Powered Electric Motors

•Resonant-mode power supplies

•Electronics Ballast Application

•Class D Audio Amplifiers

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA220N04T2-7

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = 10V, ID = 60A, Note 1 40 66 S

Ciss 6820 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 1185 pF

Crss 250 pF

td(on) 15 ns

tr 21 ns

td(off) 31 ns

tf 21 ns

Qg(on) 112 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 nC

Qgd 30 nC

RthJC 0.42 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

ISVGS = 0V 220 A

ISM Repetitive, Pulse width limited by TJM 660 A

VSD IF = 50A, VGS = 0V, Note 1 1.0 V

trr 45 ns

IRM 1.4 A

QRM 32 nC

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

2. On through-hole packages, RDS(on) Kelvin test contact

location must be 5mm or less from the package body.

Resistive Switching Times

VGS = 10V, VDS = 20V, ID = 50A

RG = 3.3Ω (External)

IF = 110A, VGS = 0V

-di/dt = 100A/μs

VR = 20V

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Pins: 1 - Gate

2, 3 - Source

4 - Drain

5,6,7 - Source

Tab (8) - Drain

TO-263 (7-lead) (IXTA..7) Outline

IXTA220N04T2-7

Fi g . 1. Ou tp u t C h ar acter isti cs

@ 25ºC

0

20

40

60

80

100

120

140

160

180

200

220

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

6V

5V

7V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0.00.51.01.52.02.53.03.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V 8V

6V

7V

5V

Fi g . 3. Ou tp u t C h ar a cter i st i cs

@ 150ºC

0

20

40

60

80

100

120

140

160

180

200

220

0.00.20.40.60.81.01.21.4

V

DS

- Volts

I

D

- Amperes

V

GS

= 15V

10V

9V

8V

6V

5V

7V

Fig. 4. R

DS(on)

Normalized to I

D

= 110A Value

vs. Junction T emperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 110A

I

D

= 220A

Fig. 5. R

DS(on)

Normalized to I

D

= 110A Valu e

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0 40 80 120 160 200 240 280 320

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V - - -

-

T

J

= 175ºC

T

J

= 25ºC

Fi g . 6. D r ai n Cur rent vs. C ase Temper atu r e

0

20

40

60

80

100

120

140

160

180

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA220N04T2-7

Fig. 7. Input Admittance

0

20

40

60

80

100

120

140

160

2.5 3 3.5 4 4.5 5 5.5 6 6.5

V

GS

- Volts

I

D

- Amperes

T

J

=150ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

0 20 40 60 80 100 120 140 160

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

150ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

30

60

90

120

150

180

210

240

270

300

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate C har g e

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 20V

I

D

= 110A

I

G

= 10mA

Fig. 11. Capacitance

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig . 12. F o r ward -Bi as Safe Operati ng Area

1

10

100

1,000

110100

V

DS

- Volts

I

D

- Amperes

T

J

= 175ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

10ms

100ms

R

DS(on)

Limit

DC

External Lead Limit

IXYS REF: T_220N04T2(V5) 4-24-08-C

IXTA220N04T2-7

Fi g . 14. R esisti ve Tur n -o n

Ri se Time vs. D r ai n C u r r en t

18

19

20

21

22

23

24

25

26

27

28

40 60 80 100 120 140 160 180 200

ID - Amperes

t

r

- Nanoseconds

R

G

= 3.3Ω

V

GS

= 10V

V

DS

= 20V

T

J

= 25ºC

T

J

= 125ºC

Fi g . 15. R esisti ve Tur n -o n

Switch i n g Times vs. Gate R esi stan ce

0

10

20

30

40

50

60

70

80

90

100

110

120

130

2 4 6 8 10 12 14 16 18 20

RG - Ohms

t

r

- Nanoseconds

5

10

15

20

25

30

35

40

45

50

55

60

65

70

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 20V

I

D

= 220A, 110A

Fi g . 16. R esi stive Tur n -o ff

Switching Times vs. Junction Tem perature

12

14

16

18

20

22

24

26

28

30

32

34

36

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

f

- Nanoseconds

18

20

22

24

26

28

30

32

34

36

38

40

42

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3.3Ω, V

GS

= 10V

V

DS

= 20V

I

D

= 110A

I

D

= 220A

Fi g . 17. R esi st i ve Tur n -o ff

Switching T imes vs. Drain Current

14

18

22

26

30

34

38

42

40 60 80 100 120 140 160 180 200

ID - Amperes

t

f

- Nanoseconds

22

26

30

34

38

42

46

50

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3.3Ω, V

GS

= 10V

V

DS

= 20V

T

J

= 125ºC

T

J

= 25ºC

Fig. 13. Resi st i ve Tur n-o n

Rise T ime vs. Junction Temperature

16

17

18

19

20

21

22

23

24

25

26

27

28

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

r

- Nanoseconds

R

G

= 3.3Ω

V

GS

= 10V

V

DS

= 20V

I

D

= 110A

I

D

= 220A

Fig. 18. Resi st i ve Tur n-o ff

Switchi n g Times vs. Gate Resistan ce

0

20

40

60

80

100

120

140

160

180

200

2 4 6 8 10 12 14 16 18 20

RG - Ohms

t

f

- Nanoseconds

0

20

40

60

80

100

120

140

160

180

200

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 20V

I

D

= 220A

I

D

= 110A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA220N04T2-7

IXYS REF: T_220N04T2(V5) 4-24-08-C

Fi g. 19. Maxi mu m Tr an si ent Ther mal I mp ed an ce

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W