MMBT5551
MMBT5551
NPN Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN
Version 2007-11-09
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
MMBT5551
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 160 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 180 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 6 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) IC600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 1 mA, VCE = 5 V MMBT5550
MMBT5551
hFE
hFE
60
80
–
–
–
–
IC = 10 mA, VCE = 5 V MMBT5550
MMBT5551
hFE
hFE
60
80
–
–
250
250
IC = 50 mA, VCE = 5 V MMBT5550
MMBT5551
hFE
hFE
20
30
–
–
–
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
IC = 10 mA, IB = 1 mA MMBT5550
MMBT5551
VCEsat
VCEsat
–
–
–
–
0.15 V
0.15 V
IC = 50 mA, IB = 5 mA MMBT5550
MMBT5551
VCEsat
VCEsat
–
–
–
–
0.25 V
0.20 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
2.5 max
1.3
±0.1
1.1
0.4
2.9
±0.1
12
3
Type
Code
1.9
MMBT5551
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
IC = 10 mA, IB = 1 mA MMBT5551 VBEsat – – 1.0 V
IC = 50 mA, IB = 5 mA MMBT5551 VBEsat – – 1.0 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 120 V, (E open) MMBT5551 ICBO – – 50 nA
VCB = 120 V, Tj = 100°C, (E open) MMBT5551 ICBO – – 50 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 4 V, (C open) IEBO – – 50 nA
Gain-Bandwidth Product – Transitfrequenz
IC = 10 mA, VCE = 10 V, f = 100 MHz fT100 MHz – 300 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO – – 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 30 pf
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 30 Hz ... 15 kHz
MMBT5551 F – – 8 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren MMBT5401
Marking - Stempelung MMBT5551 = 3S
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
