MMBT5551 MMBT5551 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage NPN NPN Version 2007-11-09 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MMBT5551 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 160 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 180 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 600 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. 2 DC current gain - Kollektor-Basis-Stromverhaltnis ) IC = 1 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE 60 80 - - - - IC = 10 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE 60 80 - - 250 250 IC = 50 mA, VCE = 5 V MMBT5550 MMBT5551 hFE hFE 20 30 - - - - Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) 1 2 IC = 10 mA, IB = 1 mA MMBT5550 MMBT5551 VCEsat VCEsat - - - - 0.15 V 0.15 V IC = 50 mA, IB = 5 mA MMBT5550 MMBT5551 VCEsat VCEsat - - - - 0.25 V 0.20 V Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT5551 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) IC = 10 mA, IB = 1 mA MMBT5551 VBEsat - - 1.0 V IC = 50 mA, IB = 5 mA MMBT5551 VBEsat - - 1.0 V Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 120 V, (E open) MMBT5551 ICBO - - 50 nA VCB = 120 V, Tj = 100C, (E open) MMBT5551 ICBO - - 50 A IEBO - - 50 nA fT 100 MHz - 300 MHz CCBO - - 6 pF CEBO - - 30 pf F - - 8 dB Emitter-Base cutoff current - Emitter-Basis-Reststrom VEB = 4 V, (C open) Gain-Bandwidth Product - Transitfrequenz IC = 10 mA, VCE = 10 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 A, RG = 2 k, f = 30 Hz ... 15 kHz MMBT5551 Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) MMBT5401 MMBT5551 = 3S Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG