KA1M0280RB - Fairchild Semiconductor

www.fairchildsemi.com

Rev.1.0.2

Features

• Precision Fixed Operating Frequency

• KA1M0280RB (67kHz) , KA1 H02 80R B ( 100kHz)

• Pulse by Pulse Over Current Limiting

• Over Load Protectio n

• Over Voltage Protection (Min. 23V)

• Internal Thermal Shutdown Function

• Unde r Voltage Lo ck out

• Internal High Voltage Sense FET

•Auto Restart

Description

The

Fairchild Power Switch(FPS)

product family is specially

designed for an off line SMPS with minimal external

components. The

Fairchild Power Switch(FPS)

consist of high

voltage power SenseFET and current mode PWM controller IC.

PWM controller features integrated fixed oscillator, under

voltage lock out, leading edge bl anking, optimized gate turn-on /

turn-of f driver, thermal shut down protection, over voltage

protection, temperature compensated precision current sources

for loop compensation and fault protection circuit. compared to

discrete MOSFET and controller or R

switching converter

solution, a

Fairchild Power Switch(FPS)

can reduce total

component count, design size, weight and at the same time

increase & efficiency, productivity, and system reliability. It has

a basic platform well suited for cost effective design in either a

flyback converter or a forward converter.

TO-220F-4L

1. GND 2. DRAIN 3. VCC 4. FB

Internal Block Diagram

#3 V

32V

A9V

2.5R

1mA

0.1V

−

OVER VOLTAGE S/D

−

7.5V

25V

Thermal S/D

Power on reset

−

L.E.B

OSC

Vref Internal

bias

Good

logic

SFET #2 DRAIN

#1 GND

#4 FB

KA1M0280RB/KA1H0280RB

Fairchil d Power Swi tch(FPS)

KA1M0280RB/KA1H0280RB

Absolute Maximum Ratings

Notes:

1. Tj = 25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L = 51mH, VDD = 50V, RG = 25Ω, starting Tj = 25°C

4. L = 13µH, starting Tj = 25°C

Parameter Symbol Value Unit

Maximum Drain Voltage

(1)

D,MAX

800 V

Drain-Gate Voltage (R

=1MΩ)V

DGR

800 V

Gate-Source (GND) Voltage V

±30 V

Drain Current Pulsed

(2)

8.0 A

Single Pulsed Avalanche Energy

(3)

90 mJ

Avalanche Current

(4)

Continuous Drain Current (T

=25°C) I

2.0 A

Continuous Drain Current (T

=100°C) I

1.3 A

Maximum Supply Voltage V

CC,MAX

30 V

Input Voltage Range V

-0.3 to V

Total Power Dissipation P

35 W

Darting 0.28 W/°C

Operating Ambient Temperature T

-25 to +85 °C

Storage Temperature T

STG

-55 to +150 °C

KA1M0280RB/KA1H0280RB

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

Parameter Symbol Condition Min. Typ. Max. Unit

Drain-Source Breakdown Voltage BV

DSS

=0V, I

=50µA 800 - - V

Zero Gate Voltage Drain Current I

DSS

=Max., Rating,

=0V --50µA

=0.8Max., Rating,

=0V, T

=125°C- - 200 µA

Static Drain-Source on Resistance

(Note)

DS(ON)

=10V, I

=1.0A - 5.6 7.0 Ω

Forward Transconductance

(Note)

gfs V

=50V, I

=1.0A 1.5 2.5 - S

Input Capacitance Ciss V

=0V, V

=25V,

f=1MHz

- 250 - pFOutput Capacitance Coss - 52 -

Reverse Transfer Capacitance Crss - 25 -

Turn on Delay Time t

d(on)

=0.5BV

DSS

, I

=2.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

-21-

Rise Time tr - 28 -

Turn Off Delay Time t

d(off)

-77-

Fall Time tf - 24 -

Total Gate Charge

(Gate-Source+Gate-Drain) Qg V

=10V, I

=2.0A,

=0.5BV

DSS

(MOSFET

switching time are

essentially independent of

operating temperature)

--60

Gate-Source Charge Qgs - 15 -

Gate-Drain (Miller) Charge Qgd - 20 -

----=

KA1M0280RB/KA1H0280RB

Electrical Characteristics (CONTROL part)

(Continued)

(Ta=25°C unless otherwise specified)

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

Parameter Symbol Condition Min. Typ. Max. Unit

UVLO SECTION

Start Threshold Voltage V

START

- 141516 V

Stop Threshold Voltage V

STOP

After turn on 9 10 11 V

OSCILLATOR SECTION

Initial Accuracy F

OSC

KA1M0280RB 61 67 73 kHz

KA1H0280RB 90 100 110

Frequency Change With Temperature

(2)

∆F/∆T-25°C ≤ Ta ≤ +85°C-±5±10 %

Maximum Duty Cycle Dmax KA1M0280RB 74 77 80 %

KA1H0280RB 64 67 70

FEEDBACK SECTION

Feedback Source Current I

Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA

Shutdown Feedback Voltage V

- 6.9 7.5 8.1 V

Shutdown Delay Current Idelay Ta=25°C, 5V ≤ Vfb ≤ V

4.0 5.0 6.0 µA

REFERENCE SECTION

Output Voltage

(1)

Vref Ta=25°C 4.80 5.00 5.20 V

Temperature Stability

(1)(2)

Vref/∆T-25°C ≤ Ta ≤ +85°C-0.30.6mV/°C

CURRENT LIMIT (SELF-PRO TECTION) SECTION

Peak Current Limit I

OVER

Max. inductor current 1.05 1.2 1.35 A

PROTECTION SECTION

Thermal Shutdown Temperature (Tj)

(1)

- 140 160 - °C

Over Voltage Protection Voltage V

OVP

- 232528 V

TOTAL DEVICE SECTION

Start-Up Current I

START

=14V 0.1 0.3 0.45 mA

Operating Supply Current

(Control Part Only) I

Ta=25°C 6 12 18 mA

Zener Voltage V

=20mA 30 32.5 35 V

KA1M0280RB/KA1H0280RB

Typical Performance Characteristics

(These characteristic graphs are normalized at Ta=25°C)

F ig. 1 O perat ing Fr equency

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Fosc

F i g. 2 Feed bac k So ur c e Cur r ent

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Ifb

Fig. 3 Oper ating Cur rent

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Iop

F ig. 4 Max Inductor Curr ent

0.8

0.85

0.9

0.95

1.05

1.1

-25 0 25 50 75 100 125 150

Ipeak

Fig. 5 S tart up Cur rent

0.5

0.7

0.9

1.1

1.3

1.5

-25 0 25 50 75 100 125 150

Istart

Fig. 6 S tart Threshold Volt age

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstart

Temperature [°C] Temperature [°C]

Temper ature [°C] Temperature [°C]

Temperatu re [°C]Temper ature [°C]

Figure 1. Operat ing Frequency Figure 2. Feedback Source Current

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Figure 5. Start up Current Figure 6. Start Th reshold Voltage

over

ST Vth(H)

IOP

KA1M0280RB/KA1H0280RB

Typical Performance Characteristics

(Continued)

(These characteristic graphs are normalized at Ta=25°C)

Fig.7 S top T hr eshold Volt age

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstop

Fig.8 Ma xi mu m Du ty C ycl e

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Dmax

F ig. 9 Vc c Z ener Volt age

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

F ig. 10 S hutdown F eedback Voltage

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vsd

F ig. 11 S hutdown Delay Curr ent

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Idelay

Fig. 12 O ver Voltage P ro t ect io n

0.85

0.9

0.95

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vovp

Temperatu re [°

] Temperature [°

]

Temperatu re [°

] Temperature [°

]

Temp er atu r e [°

]Temperatu re [°

]

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Figur e 9. VCC Ze ner Vo ltage Figure 10. Shutdown Fee dback Voltage

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

Vth(L)

KA1M0280RB/KA1H0280RB

Typical Performance Characteristics

(Continued)

(These characteristic groups are normalized at Ta=25°C)

Fig.14 Drain Source Turn-on

Resistance

0.5

1.5

2.5

-25 0 25 50 75 100 125 150

Rdson

Temperature [°C]

Figure 13. Static Drain-Source on Res istance

()

KA1M0280RB/KA1H0280RB

Package Dimensions

TO-220F-4L

KA1M0280RB/KA1H0280RB

Package Dimensions

(Continued)

TO-220F-4L(Forming)

KA1M0280RB/KA1H0280RB

8/25/03 0.0m 001

Stock#DSxxxxxxxx

 2003 Fairchild Semiconductor Corporation

LIFE SU PP ORT POL ICY

FAIRCHILD’ S PRODUCTS ARE NOT AUTHORIZ ED FOR USE AS CRI TICAL C OMPONENTS IN LIFE SUPP ORT DEVI CES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORA TION. As used he rein :

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, and (c) whose failure to

perform when properly used in accordance with

instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the

user.

2. A critical component in any component of a life support

device or syst em who se fai lure to pe rform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effec tiv ene ss.

www.fairchildsemi.com

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MA KE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRO DUCTS HEREIN TO IMPROVE RELIABILITY, FUN CTION OR DESIG N. FAIRCHILD DO ES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER

DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIG HTS, NOR THE RIGHTS OF OT HERS.

Ordering Information

TU : Non Forming Type

YDTU : Forming Type

Product Number Package Rating Fosc

KA1M0280RB-TU TO-220F-4L 800V, 2A 67kHz

KA1M0280RB-YDTU TO-220F-4L(Forming)

KA1H0280RB-TU TO-220F-4L 800V, 2A 100kHz

KA1H0280RB-YDTU TO-220F-4L(Forming)